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    • 33. 发明授权
    • Scan-out system
    • 扫描系统
    • US4491935A
    • 1985-01-01
    • US447659
    • 1982-12-07
    • Hidekiyo OzawaMikio ItohAkira Yoshida
    • Hidekiyo OzawaMikio ItohAkira Yoshida
    • G06F11/22G01R31/3185G06F11/30G06F1/00
    • G01R31/318536G01R31/318555G01R31/318558
    • A shift register which is formed by a memory, the number of shift stages of the shift register is determined by the count value of a counter and designating a read address of the memory by a value obtained by subtracting an arbitrary constant from the count value of the counter through an operator. A multiplexer is provided at the input side of the operator. Output data, obtained by selecting a constant for determining the number of shift stages of the counter and a scan address in accordance with a scan enable signal, are provided to the operator. When the constant for determining the number of shift stages of the counter is input, the operation of the shift register is carried out and when the scan address is input, the content of each stage of the shift register is scanned out.
    • 由存储器形成的移位寄存器,移位寄存器的移位级数由计数器的计数值确定,并通过从计数值的计数值减去任意常数得到的值来指定存储器的读地址 柜台通过操作员。 在操作员的输入侧提供多路复用器。 通过选择用于确定计数器的移位级数的常数和根据扫描使能信号的扫描地址获得的输出数据被提供给操作者。 当输入用于确定计数器的移位级数的常数时,执行移位寄存器的操作,并且当输入扫描地址时,扫描移位寄存器的每一级的内容。
    • 36. 发明授权
    • Image forming apparatus and image forming method
    • 图像形成装置及图像形成方法
    • US09442420B2
    • 2016-09-13
    • US14877502
    • 2015-10-07
    • Akira YoshidaKohta FujimoriKayoko TanakaNatsumi MatsueKazufumi Kimura
    • Akira YoshidaKohta FujimoriKayoko TanakaNatsumi MatsueKazufumi Kimura
    • G03G15/08
    • G03G15/0862G03G15/5058
    • An image forming apparatus includes a developer bearer and a toner pattern bearer rotatable in a given direction of rotation to bear an adjustment toner pattern formed with the developer bearer. A toner pattern detector detects an amount of reflection light reflected by the adjustment toner pattern on the toner pattern bearer. A controller performs an adjustment mode to convert the detected amount of reflection light into a toner adhesion amount of toner of the adjustment toner pattern adhered to the toner pattern bearer. The controller forms an adhesion amount suppressing toner image on an upstream region on the toner pattern bearer that is upstream from the adjustment toner pattern in the direction of rotation of the toner pattern bearer. The upstream region is defined by a circumferential length of the developer bearer in the direction of rotation of the toner pattern bearer.
    • 图像形成装置包括显影剂载体和可在给定旋转方向上旋转的调色剂图案承载件,以承载与显影剂载体形成的调节调色剂图案。 调色剂图案检测器检测由调色剂图案承载体上的调节调色剂图案反射的反射光量。 控制器执行调整模式以将检测到的反射光量转换成粘附到调色剂图案承载体上的调节调色剂图案的调色剂附着量。 控制器在调色剂图案承载体上的调色剂图案承载体的上游区域上形成粘合量,该调色剂图像在调色剂图案的调色剂图案载体的旋转方向上游。 上游区域由调色剂图案承载体的旋转方向上的显影剂载体的周向长度限定。
    • 40. 发明授权
    • Compound semiconductor substrate comprising a multilayer buffer layer
    • 化合物半导体衬底包括多层缓冲层
    • US08212288B2
    • 2012-07-03
    • US12879035
    • 2010-09-10
    • Jun KomiyamaKenichi EriguchiHiroshi OishiYoshihisa AbeAkira YoshidaShunichi Suzuki
    • Jun KomiyamaKenichi EriguchiHiroshi OishiYoshihisa AbeAkira YoshidaShunichi Suzuki
    • H01L21/02
    • H01L21/0254H01L21/02458H01L21/02507
    • A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
    • 一种禁止产生裂纹或翘曲的化合物半导体衬底,优选用于常闭型高击穿电压器件,其中AlxGa1-xN单晶层(0.6& NlE; X& NlE; 1.0 )含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层(0.1< 1lE; y≦̸ 0.5) 交替重复堆叠,并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。 以这种方式制造化合物半导体衬底。