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31. 发明申请

US20110133758A1 HIGH RESOLUTION CIRCUIT FOR CONVERTING CAPACITANCE-TO-TIME DEVIATION 有权
标题翻译：用于转换电容偏差的高分辨率电路
公开(公告)号：US20110133758A1
公开(公告)日：2011-06-09
申请号：US12675111
申请日：2008-07-21
申请人： Sung Sik Lee , Myung Lae Lee , Gunn Hwang , Chang Auck Choi
发明人： Sung Sik Lee , Myung Lae Lee , Gunn Hwang , Chang Auck Choi
IPC分类号： G01R27/26
CPC分类号： G01D5/24
摘要： There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.
摘要翻译：提供了一种用于转换电容 - 时间偏差的高分辨率电路，包括产生具有与微机电系统（MEMS）传感器的电容变化相对应的相位差的两个检测信号的电容偏差检测单元; 电容偏差放大单元，对所述两个检测信号的频率进行分频，以放大与所述电容偏差对应的相位差; 以及时间信号生成单元，生成具有与放大后的相位差对应的脉冲宽度的时间信号。

32. 发明申请

US20100251826A1 MICRO PIEZORESISTIVE PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：微型PIEZORESISTIVE压力传感器及其制造方法
公开(公告)号：US20100251826A1
公开(公告)日：2010-10-07
申请号：US12745745
申请日：2008-04-21
申请人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
发明人： Chang Auck Choi , Chang Han Je , Gunn Hwang , Youn Tae Kim , Sung Hae Jung , Myung Lae Lee , Sung Sik Lee , Seok Hwan Moon
IPC分类号： G01L9/06 , H01L41/22
CPC分类号： G01L9/0042 , Y10T29/42 , Y10T29/49
摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
摘要翻译：提供一种微型半导体型压力传感器及其制造方法。微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

33. 发明授权

US07745308B2 Method of fabricating micro-vertical structure 失效
标题翻译：微垂直结构的制作方法
公开(公告)号：US07745308B2
公开(公告)日：2010-06-29
申请号：US12417114
申请日：2009-04-02
申请人： Myung Lae Lee , Jong Hyun Lee , Sung Sik Yun , Dae Hun Jeong , Gunn Hwang , Chang Auck Choi , Chang Han Je , Jae Yong An
发明人： Myung Lae Lee , Jong Hyun Lee , Sung Sik Yun , Dae Hun Jeong , Gunn Hwang , Chang Auck Choi , Chang Han Je , Jae Yong An
IPC分类号： H01L21/00
CPC分类号： B81C1/00619 , B81C1/00626 , B81C2201/0132 , B81C2201/0133
摘要： A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.
摘要翻译：提供一种制造微垂直结构的方法。该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。结果，蚀刻的垂直表面上没有形成形态缺陷。此外，由于绝缘层图案，在蚀刻终点处不发生基脚。此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。

34. 发明授权

US07679186B2 Piezolectric micro electro-mechanical system switch, array of the switches, and method of fabricating the same 失效
标题翻译：压电微电子机械系统开关，开关阵列及其制造方法
公开(公告)号：US07679186B2
公开(公告)日：2010-03-16
申请号：US11634627
申请日：2006-12-06
申请人： Sung Hae Jung , Myung Lae Lee , Sung Weon Kang
发明人： Sung Hae Jung , Myung Lae Lee , Sung Weon Kang
IPC分类号： H01L23/48
CPC分类号： H01H57/00 , H01H2057/006 , H01L2924/0002 , H01L2924/00
摘要： A piezoelectric micro electro-mechanical system switch (MEMS), an array of piezoelectric MEMS switches, and a method of fabricating the switch, which are capable of improving low voltage and switching characteristics while securing high signal isolation, are provided. The piezoelectric MEMS switch includes a semiconductor substrate including a groove, a support formed over the semiconductor substrate and the groove. An actuator including a piezoelectric layer is formed on the support. A switching member is formed on the support on one side of the actuator, wherein upward movement of the switching member changes by a deformation of the piezoelectric layer of the actuator. Radio frequency (RF) transfer lines are arranged at a predetermined distance on the switching member and are separated by a predetermined interval from each other. The actuator is formed to have at least two cantilevers each having one end such that the ends are connected to each other.
摘要翻译：提供压电微机电系统开关（MEMS），压电MEMS开关阵列，以及制造开关的方法，其能够在确保高信号隔离的同时提高低电压和开关特性。压电MEMS开关包括半导体衬底，其包括凹槽，形成在半导体衬底上的支撑件和凹槽。包括压电层的致动器形成在支撑件上。切换构件形成在致动器的一侧上的支撑件上，其中切换构件的向上运动通过致动器的压电层的变形而改变。射频（RF）传输线被布置在切换部件上的预定距离处并以彼此间隔预定间隔分开。致动器形成为具有至少两个悬臂，每个悬臂具有一端，使得端部彼此连接。

35. 发明授权

US07393793B2 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：US07393793B2
公开(公告)日：2008-07-01
申请号：US11508017
申请日：2006-08-21
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： H01L21/302
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.
摘要翻译：一种可调波长光学滤波器的制造方法。该方法包括以下步骤：在半导体衬底上形成用于浮置下反射镜的第一牺牲氧化膜; 依次层叠导电硅膜和用于在多层中在第一牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成下反射镜; 依次层叠导电硅膜和用于在多层中的第二牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成上反射镜并在下反射镜和上反射镜之间形成光学调谐空间，以及蚀刻第一牺牲氧化物膜和第二牺牲氧化物膜，使得下反射镜浮在半导体衬底上。

36. 发明授权

US07163872B2 Tunable-wavelength optical filter and method of manufacturing the same 有权
标题翻译：可调谐波长光学滤波器及其制造方法
公开(公告)号：US07163872B2
公开(公告)日：2007-01-16
申请号：US10671825
申请日：2003-09-25
申请人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
发明人： Chang Auck Choi , Myung Lae Lee , Chang Kyu Kim , Chi Hoon Jun , Youn Tae Kim
IPC分类号： H01L21/00
CPC分类号： G02B26/001 , G01J3/26 , G02B5/0833 , G02B6/29361 , G02B6/29389 , G02B6/29395
摘要： An active type tunable wavelength optical filter having a Fabry-Perot structure is disclosed. A tunable wavelength optical filter which comprises a lower mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion; an upper mirror in which silicon films and oxide films are sequentially laminated in a multi-layer and the silicon film is laminated on the highest portion and which is spaced away from the lower mirror by a predetermined distance; a connecting means for connecting and supporting the lower mirror and the upper mirror to a semiconductor substrate; and electrode pads for controlling the gap between the lower mirror and the upper mirror by an electrostatic force and the method of manufacturing the same are provided. Thereby, by finely driving the upper and lower mirrors composed of a multi-layer structure of the silicon film and the oxide film by the electrostatic force, the wavelength of the transmitted light with respect to the incident light can be selectively sent.
摘要翻译：公开了一种具有法布里 - 珀罗结构的有源型可调谐波长滤光器。一种可调波长滤光器，包括下反射镜，其中硅膜和氧化物膜顺次层叠在多层中，并且硅膜层压在最高部分上; 其中硅膜和氧化物膜顺次层叠在多层中并且硅膜层压在最高部分上并且与下反射镜间隔预定距离的上反射镜; 用于将下反射镜和上反射镜连接和支撑到半导体基板的连接装置; 以及用于通过静电力控制下反射镜和上反射镜之间的间隙的电极焊盘及其制造方法。由此，通过利用静电力微细地驱动由硅膜和氧化膜构成的上反射镜和下反射镜，可以有选择地发射透射光相对于入射光的波长。

37. 发明授权

US06810047B2 Wavelength tunable external resonator laser using optical deflector 失效
标题翻译：使用光学偏转器的波长可调外部谐振器激光器
公开(公告)号：US06810047B2
公开(公告)日：2004-10-26
申请号：US10185100
申请日：2002-06-27
申请人： Kwang Ryong Oh , Myung Lae Lee , Hyun Soo Kim , Jung Ho Song , Kang Ho Kim
发明人： Kwang Ryong Oh , Myung Lae Lee , Hyun Soo Kim , Jung Ho Song , Kang Ho Kim
IPC分类号： H01S310
CPC分类号： H01S5/141 , H01S3/0815 , H01S3/1055 , H01S3/107 , H01S5/143
摘要： The present invention relates to an optical deflector driven by an electrical signal, and a wavelength tunable external resonator using the same. The optical deflector of a triangle shape, capable of controlling the refractive index of a beam depending on the electrical signal, is positioned between a reflection mirror and a diffraction grating in a Littman-Metcalf mode external resonator or between a lens and the diffraction grating in a Littrow mode external resonator. Thus, even with the reflection mirror and the diffracting grating fixed, the refractive index of the beam generated from a laser diode can be controlled by adjusting the electrical signal applied to the optical deflector, so that beam having a specific wavelength can be focused and the wavelength can be rapidly and consecutively tuned.
摘要翻译：本发明涉及一种由电信号驱动的光偏转器以及使用该光偏转器的波长可调外部谐振器。能够根据电信号控制光束的折射率的三角形光偏转器位于Littman-Metcalf模式外部谐振器中的反射镜和衍射光栅之间，或者位于透镜与衍射光栅之间 Littrow模式外部谐振器。因此，即使反射镜和衍射光栅固定，也可以通过调整施加到光偏转器的电信号来控制从激光二极管产生的光束的折射率，使得可以聚焦具有特定波长的光束，并且波长可以快速和连续调整。

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