专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20050121688A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20050121688A1
公开(公告)日：2005-06-09
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

32. 发明授权

US08420426B2 Method of manufacturing a light-emitting device 失效
标题翻译：制造发光装置的方法
公开(公告)号：US08420426B2
公开(公告)日：2013-04-16
申请号：US13093246
申请日：2011-04-25
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.
摘要翻译：为了提供使用能够通过高效发光获得高功率发光的氮化物半导体的发光器件，制造发光器件的方法包括在第一导电类型的一侧形成第一导电类型的第一AlGaN层在氮化物半导体衬底的第一主表面上，在第一AlGaN层上形成包含InAlGaN四元合金的发光层，在发光层上形成第二导电类型的第二AlGaN层，以及在氮化物半导体衬底之后去除氮化物半导体衬底形成第二AlGaN层。

33. 发明授权

US07943943B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07943943B2
公开(公告)日：2011-05-17
申请号：US11818024
申请日：2007-06-12
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
摘要翻译：为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层在GaN衬底的第一主表面的一侧。

34. 发明授权

US07687822B2 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07687822B2
公开(公告)日：2010-03-30
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一主表面。

35. 发明申请

US20080076199A1 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US20080076199A1
公开(公告)日：2008-03-27
申请号：US11979873
申请日：2007-11-09
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

36. 发明授权

US07294867B2 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US07294867B2
公开(公告)日：2007-11-13
申请号：US11032230
申请日：2005-01-11
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 _{N半导体层5。}}

37. 发明授权

US07508011B2 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US07508011B2
公开(公告)日：2009-03-24
申请号：US11979873
申请日：2007-11-09
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括光产生区3，第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5和第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7.在此半导体发光器件，光生成区域3由III族氮化物半导体构成，并且包括InAlGAN半导体层。第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且设置在发光区域3上。第二AlX2Ga1-X2N半导体层7具有 p型浓度比第一AlX1Ga1-X1N半导体层5小。第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7设置在发光区域3和第一AlX1Ga1-X1N半导体层5之间。

38. 发明申请

US20050040414A1 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20050040414A1
公开(公告)日：2005-02-24
申请号：US10916802
申请日：2004-08-11
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
摘要翻译：为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层在GaN衬底的第一主表面的一侧。

39. 发明授权

US07859007B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07859007B2
公开(公告)日：2010-12-28
申请号：US10916802
申请日：2004-08-11
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L31/075
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
摘要翻译：为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层在GaN衬底的第一主表面的一侧。

40. 发明申请

US20080210959A1 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US20080210959A1
公开(公告)日：2008-09-04
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式