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31. 发明申请

US20080096053A1 Oxide magnetic recording layers for perpendicular recording media 有权
标题翻译：用于垂直记录介质的氧化物磁记录层
公开(公告)号：US20080096053A1
公开(公告)日：2008-04-24
申请号：US11584992
申请日：2006-10-23
申请人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
发明人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
IPC分类号： G11B5/66
CPC分类号： G11B5/667 , G11B5/65 , G11B5/66 , G11B5/7325
摘要： An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a perpendicular recording layer with at least two oxide sublayers or a lower sublayer of a non-oxide. One structure includes an upper sublayer comprised of a Silicon-oxide, while a lower sublayer is comprised of a Tantalum-oxide. The structures provide for increased coercivity and corrosion resistance.
摘要翻译：公开了用于构建垂直记录介质的改进的结构。该结构包括具有至少两个氧化物层的垂直记录层或非氧化物的下层。一个结构包括由氧化硅构成的上层，而下层由钽氧化物构成。该结构提供增强的矫顽力和耐腐蚀性。

32. 发明申请

US20060093866A1 Magnetic thin film media with an underlayer of CrMoZr, CrMoNb or CrMoMn 有权
标题翻译：具有CrMoZr，CrMoNb或CrMoMn底层的磁性薄膜介质
公开(公告)号：US20060093866A1
公开(公告)日：2006-05-04
申请号：US10976557
申请日：2004-10-29
申请人： Xiaoping Bian , Jack Chang , Ernesto Marinero , Mohammad Mirzamaani
发明人： Xiaoping Bian , Jack Chang , Ernesto Marinero , Mohammad Mirzamaani
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , G11B5/66
摘要： A thin film disk for use in magnetic recording with an underlayer structure that includes a layer of CrMoZr, CrMoNb or CrMoMn is described. The preferred embodiment includes a circumferentially textured glass substrate, a pre-seed layer, a B2 seed layer, an underlayer structure and a magnetic layer stack with a plurality of layers. The preferred underlayer structure has a first underlayer of CrTi followed by a second underlayer of CrMoZr. The preferred B2 seed layer material is RuAl. The preferred pre-seed layer is CrTiAl. The preferred magnetic layer stack is CoCr/CoPtCrB/CoPtCrBCu. The preferred embodiment is useful for longitudinal magnetic recording. The in-plane crystallographic orientation, the Mrt orientation ratio and the media SNR are improved by the inclusion of the CrMoZr, CrMoNb or CrMoMn according to the invention.
摘要翻译：描述了用于具有包括CrMoZr，CrMoNb或CrMoMn层的底层结构的磁记录的薄膜盘。优选实施例包括周向纹理化的玻璃基板，预种子层，B2种子层，下层结构和具有多个层的磁性层堆叠。优选的底层结构具有CrTi的第一底层，之后是CrMoZr的第二底层。优选的B2种子层材料是RuAl。优选的种子前层是CrTiAl。优选的磁性层堆叠是CoCr / CoPtCrB / CoPtCrBCu。优选实施例对于纵向磁记录是有用的。通过包括根据本发明的CrMoZr，CrMoNb或CrMoMn，提高了面内晶体取向，Mrt取向比和介质SNR。

33. 发明申请

US20050048328A1 MAGNETIC THIN FILM MEDIA WITH A BI-LAYER STRUCTURE OF CRTI/NIP 有权
标题翻译：具有CRTI / NIP的双层结构的磁薄膜介质
公开(公告)号：US20050048328A1
公开(公告)日：2005-03-03
申请号：US10651634
申请日：2003-08-29
申请人： Xiaoping Bian , Mary Doerner , Mohammad Mirzamaani , Adam Polcyn , Qi-Fan Xiao
发明人： Xiaoping Bian , Mary Doerner , Mohammad Mirzamaani , Adam Polcyn , Qi-Fan Xiao
IPC分类号： G11B5/738 , G11B5/65 , G11B5/73 , G11B5/85 , G11B5/851 , B32B3/02 , G11B5/64
CPC分类号： G11B5/7325 , Y10S428/90 , Y10T428/12465 , Y10T428/12854 , Y10T428/12861 , Y10T428/12986
摘要： A thin film magnetic media structure with a bi-layer structure of amorphous chromium titanium (CrTi) followed by an amorphous layer of nickel phosphorus (NiP) is disclosed. After the NiP has been deposited it is exposed to oxygen to form an oxidized surface. Preferably the underlayer is deposited directly onto the oxidized NiP surface. The bi-layer structure of CrTi/NiP promotes excellent in-plane crystallographic orientation in the cobalt alloy magnetic layer(s) and allows: an ultra-thin chromium underlayer to be used which provides better control over grain size and distribution. When the CrTi/NiP bi-layer structure is combined with a circumferentially textured substrate, preferably glass, a high Mrt orientation ratio (OR) results.
摘要翻译：公开了一种具有非晶态铬钛（CrTi）双层结构，随后是镍磷（NiP）非晶层的薄膜磁介质结构。 NiP沉积后，暴露于氧气以形成氧化表面。优选地，底层直接沉积在氧化的NiP表面上。 CrTi / NiP的双层结构促进钴合金磁性层中的优异的面内晶体取向，并且允许：使用超薄铬底层，其提供对晶粒尺寸和分布的更好控制。当CrTi / NiP双层结构与周向织构化的基底（优选玻璃）组合时，得到高的Mrt取向比（OR）。

34. 发明授权

US08721903B2 Method for planarizing a perpendicular magnetic recording disk for thermally-assisted recording (TAR) 有权
标题翻译：平面化用于热辅助记录（TAR）的垂直磁记录盘的方法
公开(公告)号：US08721903B2
公开(公告)日：2014-05-13
申请号：US13439929
申请日：2012-04-05
申请人： Xiaoping Bian , Qing Dai , Oleksandr Mosendz , Franck Dreyfus Rose , Run-Han Wang
发明人： Xiaoping Bian , Qing Dai , Oleksandr Mosendz , Franck Dreyfus Rose , Run-Han Wang
IPC分类号： B44C1/22
CPC分类号： G11B5/65 , G11B5/72 , G11B5/8408
摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
摘要翻译：真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度）和分离剂，如SiO 2。第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。

35. 发明申请

US20130264306A1 METHOD FOR PLANARIZING A PERPENDICULAR MAGNETIC RECORDING DISK FOR THERMALLY-ASSISTED RECORDING (TAR) 有权
标题翻译：用于平面化用于热辅助记录（TAR）的平滑磁记录盘的方法
公开(公告)号：US20130264306A1
公开(公告)日：2013-10-10
申请号：US13439929
申请日：2012-04-05
申请人： Xiaoping Bian , Qing Dai , Oleksandr Mosendz , Franck Dreyfus Rose , Run-Han Wang
发明人： Xiaoping Bian , Qing Dai , Oleksandr Mosendz , Franck Dreyfus Rose , Run-Han Wang
IPC分类号： G11B5/84
CPC分类号： G11B5/65 , G11B5/72 , G11B5/8408
摘要： A vacuum planarization method substantially improves the surface roughness of a thermally-assisted recording (TAR) disk that has a recording layer (RL) formed of a substantially chemically-ordered FePt alloy or FePt-X alloy (or CoPt alloy or CoPt-X alloy) and a segregant, like SiO2. A first amorphous carbon overcoat (OC1) is deposited on the RL and etched with a non-chemically reactive plasma to remove at least one-half the thickness of OC1. Then a second amorphous carbon overcoat (OC2) is deposited on the etched OC1. The OC2 is then reactive-ion-etched, for example in a H2/Ar plasma, to remove at least one-half the thickness of OC2. A thin third overcoat (OC3) may be deposited on the etched OC2.
摘要翻译：真空平面化方法大大提高了具有由基本上化学排列的FePt合金或FePt-X合金（或CoPt合金或CoPt-X合金（或CoPt-X）合金）形成的记录层（RL）的热辅助记录（TAR）盘的表面粗糙度）和分离剂，如SiO 2。第一非晶碳外涂层（OC1）沉积在RL上并用非化学反应性等离子体蚀刻，以除去OC1的至少一半的厚度。然后在蚀刻的OC1上沉积第二个无定形碳外涂层（OC2）。然后将OC2反应离子蚀刻，例如在H 2 / Ar等离子体中，以去除OC2的至少一半的厚度。可以在蚀刻的OC2上沉积薄的第三外涂层（OC3）。

36. 发明申请

US20120325771A1 SYSTEM AND METHOD OF FABRICATING MEDIA 审中-公开
标题翻译：制作媒体的系统和方法
公开(公告)号：US20120325771A1
公开(公告)日：2012-12-27
申请号：US13604235
申请日：2012-09-05
申请人： Xiaoping Bian , Qing Dai , Dan S. Kercher , Mark F. Mercado , Qi-fan Xiao , Jane J. Zhang
发明人： Xiaoping Bian , Qing Dai , Dan S. Kercher , Mark F. Mercado , Qi-fan Xiao , Jane J. Zhang
IPC分类号： G11B5/84
CPC分类号： G11B5/8408
摘要： A method of fabricating media comprises forming recording media on a substrate. An overcoat is deposited on the recording media opposite the substrate. The overcoat has a first surface finish. The overcoat is etched to remove material and provide the overcoat with a second surface finish that is smoother than the first surface finish. The depositing and etching may occur sequentially in an in-situ, dry vacuum process. The second surface finish may not be mechanically processed after etching to further planarize the overcoat.
摘要翻译：制造介质的方法包括在基底上形成记录介质。在与衬底相对的记录介质上沉积外涂层。外套具有第一表面光洁度。蚀刻外涂层以除去材料，并为外涂层提供比第一表面光洁度更平滑的第二表面光洁度。沉积和蚀刻可以在原位干燥的真空过程中顺序地进行。蚀刻后第二表面光洁度可能不能机械加工，以进一步平整外涂层。

37. 发明授权

US08168310B2 Perpendicular magnetic recording media with oxide-containing exchange coupling layer 有权
标题翻译：具有氧化物交换耦合层的垂直磁记录介质
公开(公告)号：US08168310B2
公开(公告)日：2012-05-01
申请号：US12638905
申请日：2009-12-15
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65
摘要： A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施例的磁存储介质包括基板; 形成在所述基板上的第一氧化物磁性层; 形成在所述第一氧化物磁性层上方的第二氧化物磁性层; 在所述第二氧化物磁性层上形成的交换耦合层，所述交换耦合层包含氧化物; 以及形成在所述交换耦合层上方的磁性盖层。根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。还介绍了其他系统和方法。

38. 发明申请

US20110141621A1 PERPENDICULAR MAGNETIC RECORDING MEDIA WITH OXIDE-CONTAINING EXCHANGE COUPLING LAYER 有权
标题翻译：含氧化物交换耦合层的全磁性记录介质
公开(公告)号：US20110141621A1
公开(公告)日：2011-06-16
申请号：US12638905
申请日：2009-12-15
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
IPC分类号： G11B5/82 , C23C14/34
CPC分类号： G11B5/66 , G11B5/65
摘要： A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施例的磁存储介质包括基板; 形成在所述基板上的第一氧化物磁性层; 形成在所述第一氧化物磁性层上方的第二氧化物磁性层; 在所述第二氧化物磁性层上形成的交换耦合层，所述交换耦合层包含氧化物; 以及形成在所述交换耦合层上方的磁性盖层。根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。还介绍了其他系统和方法。

39. 发明申请

US20110141609A1 ONSET LAYER FOR PERPENDICULAR MAGNETIC RECORDING MEDIA 有权
标题翻译：普通磁记录介质的ONSET层
公开(公告)号：US20110141609A1
公开(公告)日：2011-06-16
申请号：US12638894
申请日：2009-12-15
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Mark F. Mercado , Mohammad T. Mirzamaani , Kai Tang
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Mark F. Mercado , Mohammad T. Mirzamaani , Kai Tang
IPC分类号： G11B21/02 , G11B5/66 , C23C14/34 , G11B5/84
CPC分类号： G11B5/851 , C23C14/0688 , C23C14/083 , C23C14/34 , C23C14/3414 , G11B5/65 , G11B5/7325 , G11B5/8404
摘要： A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer. A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施例的磁存储介质包括基板; 起始层，形成在基底上方，起始层包含钌和氧化钛; 以及直接形成在起始层上的磁性氧化物层。根据一个实施方案的方法包括使用钌和氧化钛靶用于在基底上形成起始层的溅射，起始层包含钌和氧化钛; 并在起始层上直接形成磁性氧化物层。还介绍了其他系统和方法。

40. 发明授权

US07862913B2 Oxide magnetic recording layers for perpendicular recording media 有权
标题翻译：用于垂直记录介质的氧化物磁记录层
公开(公告)号：US07862913B2
公开(公告)日：2011-01-04
申请号：US11584992
申请日：2006-10-23
申请人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
发明人： Xiaoping Bian , Qing Dai , Hoa Do , Yoshihiro Ikeda , David Margulies , Mary Frances Minardi , Natacha Frederique Supper , Kentaro Takano , Min Xiao , Qi-Fan Xiao
IPC分类号： G11B5/66 , G11B5/706
CPC分类号： G11B5/667 , G11B5/65 , G11B5/66 , G11B5/7325
摘要： An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a perpendicular recording layer with at least two oxide sublayers or a lower sublayer of a non-oxide. One structure includes an upper sublayer comprised of a Silicon-oxide, while a lower sublayer is comprised of a Tantalum-oxide. The structures provide for increased coercivity and corrosion resistance.
摘要翻译：公开了用于构建垂直记录介质的改进的结构。该结构包括具有至少两个氧化物层的垂直记录层或非氧化物的下层。一个结构包括由氧化硅构成的上层，而下层由钽氧化物构成。该结构提供增强的矫顽力和耐腐蚀性。

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