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    • 33. 发明授权
    • Method of treating handover in a bridge-based radio access station backbone network
    • 在基于桥的无线电接入站骨干网中处理切换的方法
    • US07860504B2
    • 2010-12-28
    • US11893801
    • 2007-08-17
    • Jae-Hun ChoSeong-Taek HwangHoon KimJong-Hee KimJong-Ho Yoon
    • Jae-Hun ChoSeong-Taek HwangHoon KimJong-Hee KimJong-Ho Yoon
    • H04W36/00
    • H04W36/12H04W76/20
    • A method of treating a handover in a bridge-based radio access station backbone network including a plurality of base station bridges each including a two-tiered switch connected with a plurality of radio access stations, a plurality of SCBs (Site Core Bridges) each composed of two-tiered switch for constituting the core network, and an HLR (Home Location Register) for managing the structural information of the network constituents. The SCB stores the terminal information containing the receiving address of the initial terminal registration message and the SCB to delete the terminal information in response to a disconnection message of the terminal caused by handover, to request the SCBs in the terminal end of the old MAC-in-MAC tunnel to delete the tunnel information and the terminal information, and to inform the HLR of initiating the handover to change the registered operational state of the terminal.
    • 一种处理基于桥的无线电接入站骨干网中的切换的方法,包括多个基站桥,每个基站桥包括与多个无线电接入站连接的双层交换机,每个组成的多个SCB(站点核心桥) 用于构成核心网络的双层交换机,以及用于管理网络组成部分的结构信息的HLR(归属位置寄存器)。 SCB存储包含初始终端注册消息的接收地址的终端信息和SCB,以响应于由切换引起的终端的断开消息来删除终端信息,以请求旧的MAC-CSCF的终端中的SCB, 在MAC隧道中删除隧道信息和终端信息,并通知HLR发起切换以改变终端的注册操作状态。
    • 34. 发明授权
    • High-sensitivity image sensor and fabrication method thereof
    • 高灵敏度图像传感器及其制造方法
    • US07851839B2
    • 2010-12-14
    • US11952365
    • 2007-12-07
    • Hoon Kim
    • Hoon Kim
    • H01L31/062H01L31/113H01L21/00H01L21/425
    • H01L27/14643H01L27/14687H01L27/14689H01L29/0653
    • A method of fabricating a high-sensitivity image sensor and the same are disclosed. The disclosed method comprises: etching predetermined regions of active silicon and a buried oxide layer of a SOI substrate by using a mask to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form P-type regions; forming a gate oxide layer and a gate electrode on the middle part of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; forming a P-type gate electrode, and P-type source and drain regions by implanting P-type ions into the active silicon and the gate electrode above the buried oxide layer; and constructing a connection part to connect the P-type regions to the gate electrode. The disclosed high-sensitivity sensor comprises: a photodiode region having a PN junction between an N-type silicon substrate and a P-type region thereon; a monocrystalline silicon region from a SOI substrate in which source and drain regions, and a channel are placed, having a distance to the photodiode region; a gate oxide layer and a gate electrode on the silicon region; and a connection part connecting the P-type region of the photodiode to the gate electrode.
    • 公开了一种制造高灵敏度图像传感器的方法。 所公开的方法包括:通过使用掩模来蚀刻N型硅衬底的有源硅和SOI衬底的掩埋氧化物层的预定区域; 将P型离子注入暴露的N型硅衬底中以形成P型区; 在活性硅被蚀刻以暴露N型硅衬底的同时,在未蚀刻的有源硅的中间部分上形成栅极氧化物层和栅电极; 通过将P型离子注入有源硅和掩埋氧化物层上方的栅电极,形成P型栅电极和P型源区和漏区; 以及构造连接部分以将P型区域连接到栅电极。 所公开的高灵敏度传感器包括:在N型硅衬底和其上的P型区域之间具有PN结的光电二极管区域; 来自SOI衬底的单晶硅区域,其中放置源极和漏极区域以及与光电二极管区域有距离的通道; 硅区域上的栅极氧化物层和栅电极; 以及将光电二极管的P型区域连接到栅电极的连接部。
    • 36. 发明授权
    • Organic electro-luminescent display device
    • 有机电致发光显示装置
    • US07812527B2
    • 2010-10-12
    • US11933342
    • 2007-10-31
    • Hoon KimJin Koo ChungWon Hoe KooJung Mi Choi
    • Hoon KimJin Koo ChungWon Hoe KooJung Mi Choi
    • H01J1/62
    • H01L51/5253
    • An organic electro-luminescent display device includes barriers in a non-display area to protect a display area from water and oxygen. Barriers may include a permeation prevention barrier, a voltage contact portion, and a blocking layer. A permeation prevention barrier includes contact portions where a barrier layer having a lower permeability than a passivation layer penetrates through the passivation layer. A voltage contact portion penetrates the passivation layer so that a signal supply line contacts a conductive material. A blocking layer covers a wall, a planarization layer, and an inorganic insulation layer, and has a lower permeability than the planarization layer, the wall, and the inorganic insulation layer. The permeation prevention barrier, the voltage contact portion, and the blocking layer may be used in various combinations.
    • 有机电致发光显示装置包括非显示区域中的屏障以保护显示区域免受水和氧气的影响。 阻挡层可以包括防渗透屏障,电压接触部分和阻挡层。 防渗透屏障包括其中具有比钝化层更低的渗透性的阻挡层穿过钝化层的接触部分。 电压接触部分穿透钝化层,使得信号提供线接触导电材料。 阻挡层覆盖壁,平坦化层和无机绝缘层,并且具有比平坦化层,壁和无机绝缘层更低的渗透性。 防渗透屏障,电压接触部分和阻挡层可以以各种组合使用。