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31. 发明申请

US20050205952A1 Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same 审中-公开
标题翻译：具有在其上具有覆层的分割子数字线的磁性随机存取存储器单元及其制造方法
公开(公告)号：US20050205952A1
公开(公告)日：2005-09-22
申请号：US11077669
申请日：2005-03-11
申请人： Jae-Hyun Park , Hyeong-Jun Kim , Won-Cheol Jeong , Chang-Wook Jeong , Hong-sik Jeong , Gi-Tae Jeong
发明人： Jae-Hyun Park , Hyeong-Jun Kim , Won-Cheol Jeong , Chang-Wook Jeong , Hong-sik Jeong , Gi-Tae Jeong
IPC分类号： H01L21/00 , H01L21/8246 , H01L27/22 , H01L29/82 , H01L43/08 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08 , H01L43/12
摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.
摘要翻译：磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。还提供了制造磁性RAM单元的方法。

32. 发明申请

US20090268515A1 Twin-Cell Semiconductor Memory Devices 审中-公开
标题翻译：双电池半导体存储器件
公开(公告)号：US20090268515A1
公开(公告)日：2009-10-29
申请号：US12498597
申请日：2009-07-07
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/14 , G11C7/02
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Twin cell type semiconductor memory devices are provided that include a plurality of main bit lines and a plurality of reference bit lines. Each of the reference bit lines correspond to respective ones of the main bit lines to form a plurality of bit line pairs. A plurality of sense amplifiers are provided that are electrically connected to a respective one of the plurality of bit line pairs. At least one of the plurality of main bit lines or the plurality of reference bit lines is interposed between the main bit line and the corresponding reference bit line of each bit line pair. At least some of the main bit lines may cross respective ones of the reference bit lines in a sense amplifier region of the semiconductor memory device that contains the plurality of sense amplifiers.
摘要翻译：提供了包括多个主位线和多个参考位线的双电池型半导体存储器件。每个参考位线对应于主位线中的相应位线以形成多个位线对。提供多个读出放大器，其电连接到多个位线对中的相应一个。多个主位线或多个参考位线中的至少一个被插入在每个位线对的主位线和对应的参考位线之间。至少一些主位线可以在包含多个读出放大器的半导体存储器件的读出放大器区域中交叉相应的参考位线。

33. 发明授权

US07589994B2 Methods of writing data to magnetic random access memory devices with bit line and/or digit line magnetic layers 失效
标题翻译：将数据写入具有位线和/或数字线磁性层的磁性随机存取存储器件的方法
公开(公告)号：US07589994B2
公开(公告)日：2009-09-15
申请号：US12171893
申请日：2008-07-11
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure may be provided adjacent the digit line, and a bit line may be provided on the magnetic tunnel junction structure such that the magnetic tunnel junction structure is between the bit line and the digit line. In addition, a second magnetic layer may be provided on the bit line.
摘要翻译：磁性随机存取存储器（MRAM）器件可以包括衬底，衬底上的第一磁性层和第一磁性层上的数字线。可以在数字线附近提供磁性隧道结结构，并且可以在磁性隧道结结构上提供位线，使得磁性隧道结结构位于位线和数字线之间。此外，可以在位线上设置第二磁性层。

34. 发明授权

US07569401B2 Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same 失效
标题翻译：磁性随机存取存储单元具有其上具有覆层的分割子数据线及其制造方法
公开(公告)号：US07569401B2
公开(公告)日：2009-08-04
申请号：US12048082
申请日：2008-03-13
申请人： Jae-Hyun Park , Hyeong-Jun Kim , Won-Cheol Jeong , Chang-Wook Jeong , Hong-sik Jeong , Gi-Tae Jeong
发明人： Jae-Hyun Park , Hyeong-Jun Kim , Won-Cheol Jeong , Chang-Wook Jeong , Hong-sik Jeong , Gi-Tae Jeong
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08 , H01L43/12
摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.
摘要翻译：磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。还提供了制造磁性RAM单元的方法。

35. 发明授权

US07372722B2 Methods of operating magnetic random access memory devices including heat-generating structures 有权
标题翻译：包括发热结构的磁性随机存取存储器件的操作方法
公开(公告)号：US07372722B2
公开(公告)日：2008-05-13
申请号：US11263521
申请日：2005-10-31
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/00 , G11C11/34
CPC分类号： G11C11/15
摘要： Methods may be provided for operating a magnetic random access memory (MRAM device including a magnetic tunnel junction structure and a heat generating layer. More particularly, a write current may be provided through the magnetic tunnel junction structure and through the heat generating layer, and the write current may have a magnitude sufficient to change a program state of the magnetic tunnel junction structure. Related devices are also discussed.
摘要翻译：可以提供用于操作磁性随机存取存储器（包括磁性隧道结结构和发热层的MRAM器件）的方法，更具体地说，可以通过磁性隧道结结构和通过发热层提供写入电流，写入电流可能具有足以改变磁性隧道结结构的编程状态的量值，还讨论了相关器件。

36. 发明授权

US07307874B2 Methods of operating magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures 失效
标题翻译：操作包括邻近磁隧道结结构的磁体的磁随机存取存储器件的方法
公开(公告)号：US07307874B2
公开(公告)日：2007-12-11
申请号：US11177641
申请日：2005-07-08
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16
CPC分类号： G11C11/15
摘要： A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.
摘要翻译：磁性随机存取存储器件可以包括衬底上的存储单元存取晶体管，与衬底间隔开的位线，以及电耦合在位线和存储单元存取晶体管之间的磁性隧道结结构。至少一个磁体可以邻近磁性隧道结结构的侧壁定位，并且可以被配置为通过磁性隧道结结构提供磁场。还讨论了操作磁随机存取存储器件的相关方法。

37. 发明申请

US20060092698A1 Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods 失效
标题翻译：磁性随机存取存储器件包括与磁隧道结结构相邻的磁体及相关方法
公开(公告)号：US20060092698A1
公开(公告)日：2006-05-04
申请号：US11177641
申请日：2005-07-08
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.
摘要翻译：磁性随机存取存储器件可以包括衬底上的存储单元存取晶体管，与衬底间隔开的位线以及电耦合在位线和存储单元存取晶体管之间的磁性隧道结结构。至少一个磁体可以邻近磁性隧道结结构的侧壁定位，并且可以被配置为通过磁性隧道结结构提供磁场。还讨论了操作磁随机存取存储器件的相关方法。

38. 发明申请

US20100044667A1 SEMICONDUCTOR DEVICES HAVING A PLANARIZED INSULATING LAYER 失效
标题翻译：具有平面绝缘层的半导体器件
公开(公告)号：US20100044667A1
公开(公告)日：2010-02-25
申请号：US12612377
申请日：2009-11-04
申请人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
发明人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
IPC分类号： H01L47/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/0004 , G11C2213/79 , H01L21/76819 , H01L27/228 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.
摘要翻译：半导体器件包括设置在半导体衬底上的至少一个相变图案。依次层叠有平面化覆盖层，平坦化保护层和平坦化绝缘层，以包围至少一个相变图案的侧壁。互连层图案设置在平坦化覆盖层，平坦化保护层和平坦化绝缘层上。互连层图案与相变图案接触。

39. 发明申请

US20090166600A1 INTEGRATED CIRCUIT DEVICES HAVING A STRESS BUFFER SPACER AND METHODS OF FABRICATING THE SAME 失效
标题翻译：具有应力缓冲器间隔器的集成电路装置及其制造方法
公开(公告)号：US20090166600A1
公开(公告)日：2009-07-02
申请号：US11546120
申请日：2006-10-11
申请人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong , Sang-Jin Park
发明人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong , Sang-Jin Park
IPC分类号： H01L45/00 , H01L21/74
CPC分类号： H01L27/24
摘要： Integrated circuit devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in the contact hole and a stress buffer spacer is provided between the vertical diode and the insulating layer. Methods of forming the integrated circuit devices are also provided.
摘要翻译：集成电路器件包括集成电路衬底和集成电路衬底上的绝缘层。接触孔穿透绝缘层。接触孔中有一个垂直二极管，在垂直二极管和绝缘层之间设有一个应力缓冲垫片。还提供了形成集成电路器件的方法。

40. 发明申请

US20080273377A1 METHODS OF WRITING DATA TO MAGNETIC RANDOM ACCESS MEMORY DEVICES WITH BIT LINE AND/OR DIGIT LINE MAGNETIC LAYERS 失效
标题翻译：将数据写入具有位线和/或数字线磁性层的磁性随机存取存储器件的方法
公开(公告)号：US20080273377A1
公开(公告)日：2008-11-06
申请号：US12171893
申请日：2008-07-11
申请人： Won-Cheol Jeong , Jae-Hyun Park
发明人： Won-Cheol Jeong , Jae-Hyun Park
IPC分类号： G11C11/02 , G11C7/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetic random access memory (MRAM) device may include a substrate, a first magnetic layer on the substrate, and a digit line on the first magnetic layer. A magnetic tunnel junction structure may be provided adjacent the digit line, and a bit line may be provided on the magnetic tunnel junction structure such that the magnetic tunnel junction structure is between the bit line and the digit line. In addition, a second magnetic layer may be provided on the bit line.
摘要翻译：磁性随机存取存储器（MRAM）器件可以包括衬底，衬底上的第一磁性层和第一磁性层上的数字线。可以在数字线附近提供磁性隧道结结构，并且可以在磁性隧道结结构上提供位线，使得磁性隧道结结构位于位线和数字线之间。此外，可以在位线上设置第二磁性层。

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