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31. 发明授权

US07196351B2 Forming phase change memories 有权
公开(公告)号：US07196351B2
公开(公告)日：2007-03-27
申请号：US11013036
申请日：2004-12-15
申请人： Chien Chiang , Charles Dennison , Tyler Lowrey
发明人： Chien Chiang , Charles Dennison , Tyler Lowrey
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

32. 发明申请

US20060183335A1 Using an electron beam to write phase change memory devices 审中-公开
标题翻译：使用电子束来写入相变存储器件
公开(公告)号：US20060183335A1
公开(公告)日：2006-08-17
申请号：US11392111
申请日：2006-03-29
申请人： Tyler Lowrey , Stephen Hudgens
发明人： Tyler Lowrey , Stephen Hudgens
IPC分类号： H01L21/311
CPC分类号： H01L45/06 , H01J2237/31774 , H01L45/1233 , H01L45/1691
摘要： Phase change memories may be made with relatively small pore sizes using electron beam lithography. An electrode may be covered with a relatively thin insulator, which may be patterned using direct write electron beam lithography.
摘要翻译：可以使用电子束光刻法以相对小的孔径进行相变记忆。电极可以用相对薄的绝缘体覆盖，其可以使用直接写入电子束光刻来图案化。

33. 发明申请

US20060115987A1 Semiconductor device having recess and planarized layers 失效
标题翻译：具有凹槽和平坦化层的半导体器件
公开(公告)号：US20060115987A1
公开(公告)日：2006-06-01
申请号：US11331573
申请日：2006-01-13
申请人： Trung Doan , Tyler Lowrey
发明人： Trung Doan , Tyler Lowrey
IPC分类号： H01L21/461
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/42336 , H01L29/7881
摘要： A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. The device includes a silicon substrate having an electrically isolated active area. A gate oxide, as well as other components of a FET (e.g., source, drain) are formed in the active area. A self aligned floating gate is formed by depositing a conductive layer (e.g., polysilicon) into the recess and over the gate oxide. The conductive layer is then chemically mechanically planarized to an endpoint of the isolation layer so that all of the conductive layer except material in the recess and on the gate oxide is removed. Following formation of the floating gate an insulating layer is formed on the floating gate and a control gate is formed on the insulating layer.
摘要翻译：提供了一种用于形成诸如电可擦除可编程只读存储器的浮置栅极半导体器件的方法。该器件包括具有电隔离的有源区的硅衬底。栅极氧化物以及FET的其它部件（例如，源极，漏极）形成在有源区域中。通过将导电层（例如多晶硅）沉积到栅极氧化物上而形成自对准浮栅。然后将导电层化学机械平面化到隔离层的端点，使得去除凹部中和栅极氧化物上的材料以外的所有导电层。在形成浮栅之后，在浮栅上形成绝缘层，在绝缘层上形成控制栅。

34. 发明授权

US07049623B2 Vertical elevated pore phase change memory 有权
公开(公告)号：US07049623B2
公开(公告)日：2006-05-23
申请号：US10319179
申请日：2002-12-13
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： G11C13/0069 , G11C2013/008 , G11C2213/52 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , Y10T428/13
摘要： A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the higher resistivity lower electrode. As a result, more uniform heating of the phase change material may be achieved in some embodiments and better contact may be made in some cases.

35. 发明申请

US20060098524A1 Forming planarized semiconductor structures 审中-公开
标题翻译：形成平坦化的半导体结构
公开(公告)号：US20060098524A1
公开(公告)日：2006-05-11
申请号：US11303417
申请日：2005-12-16
申请人： Daniel Xu , Tyler Lowrey , Jong-Won Lee , Kyu Min , Donghui Lu , Jenn Chow
发明人： Daniel Xu , Tyler Lowrey , Jong-Won Lee , Kyu Min , Donghui Lu , Jenn Chow
IPC分类号： G11C8/02
CPC分类号： H01L45/16 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1293 , H01L45/144
摘要： A planarized surface may be formed by initially forming an aperture through an insulating layer. The insulating layer and its aperture may be conformally coated with a conductive material that ultimately acts as a planarization stop. The conductive material may then be covered with another insulator that fills the remainder of the aperture. Thereafter, the structure may be planarized down to the conductive layer that acts as a planarization stop.
摘要翻译：可以通过最初通过绝缘层形成孔而形成平坦化表面。绝缘层及其孔可以共形地涂覆有最终用作平坦化停止的导电材料。然后可以用填充孔的其余部分的另一绝缘体覆盖导电材料。此后，该结构可以平坦化为用作平坦化停止的导电层。

36. 发明申请

US20060097240A1 Programmable matrix array with chalcogenide material 有权
公开(公告)号：US20060097240A1
公开(公告)日：2006-05-11
申请号：US11209079
申请日：2005-08-22
申请人： Tyler Lowrey , Ward Parkinson , Guy Wicker
发明人： Tyler Lowrey , Ward Parkinson , Guy Wicker
IPC分类号： H01L29/06
CPC分类号： G11C13/003 , G11C13/0004 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L45/04 , H01L45/1233 , H01L45/141
摘要： A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.

37. 发明申请

US20060082445A1 Radio frequency data communications device 失效
标题翻译：射频数据通信设备
公开(公告)号：US20060082445A1
公开(公告)日：2006-04-20
申请号：US11290238
申请日：2005-11-29
申请人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , Shu-Sun Yu , David Ovard , Robert Rotzoll
发明人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , Shu-Sun Yu , David Ovard , Robert Rotzoll
IPC分类号： H04Q5/22
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device includes an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
摘要翻译：射频识别装置包括包括接收器，发射器和微处理器的集成电路。接收机和发射机一起定义了一个有效的应答器。集成电路优选地是包括接收器，发射器和微处理器的单片单片集成电路。由于该设备包括有源应答器，而不是依赖于磁耦合功率的转发器，该器件具有更大的范围。

38. 发明申请

US20050104231A1 Forming phase change memories 有权
公开(公告)号：US20050104231A1
公开(公告)日：2005-05-19
申请号：US11013036
申请日：2004-12-15
申请人： Chien Chiang , Charles Dennison , Tyler Lowrey
发明人： Chien Chiang , Charles Dennison , Tyler Lowrey
IPC分类号： H01L45/00 , A63H3/00 , C30B1/00 , H01L21/20 , H01L23/58
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

39. 发明申请

US20050062132A1 Electrically programmable memory element 有权
标题翻译：电可编程存储元件
公开(公告)号：US20050062132A1
公开(公告)日：2005-03-24
申请号：US10981826
申请日：2004-11-05
申请人： Patrick Klersy , Tyler Lowrey
发明人： Patrick Klersy , Tyler Lowrey
IPC分类号： H01L21/8238 , G11C11/56 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/24 , H01L45/00 , H01L29/00 , H01L21/44
CPC分类号： H01L27/2436 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A programmable resistance memory element including a memory material which is raised above a semiconductor substrate by a dielectric layer.
摘要翻译：一种可编程电阻存储元件，包括通过电介质层在半导体衬底上升起的存储材料。

40. 发明申请

US20050042799A1 Pore structure for programmable device 失效
公开(公告)号：US20050042799A1
公开(公告)日：2005-02-24
申请号：US10958613
申请日：2004-10-05
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L27/24 , H01L45/00 , H01L21/00 , H01L21/06
CPC分类号： H01L27/2463 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1691
摘要： In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, the quantity of programmable material is minimized, and the programmable material that is reprogrammed from an amorphous to a crystalline state, and vice versa, is localized on a contact. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. A spacer is formed within the opening and a programmable material is formed within the opening such that the spacer reduces the programmable material on the contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

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