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31. 发明专利

JPS5544509A VACUUM APPARATUS PART COATED WITH METALLIC NITRIDE 失效
公开(公告)号：JPS5544509A
公开(公告)日：1980-03-28
申请号：JP11586378
申请日：1978-09-22
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： F16L23/16 , B01J3/00 , B01J19/02 , C23C14/06 , C23C14/56
摘要： PURPOSE:To prevent the release of impurities from a vacuum apparatus etc. and to decrease the speed of a vacuum pump required to produce a given vacuum, by coating the surface of a vacuum vessel or parts for a vacuum apparatus with nitride of a metal e.g., B, Al, Si, or Ti etc. by reactive evaporation. CONSTITUTION:The surface of a vacuum vessel or vacuum apparatus parts made of stainless steel etc. is coated with a nitride of a metal, e.g., B, Al, Si, Ti, Zr etc, by reactive evaporation. The coating is chemically stable, the surface is very smooth, and the quantity of gas adsorbed on the surface is very small. In addn., the coating is high in hardness, corrosion resistance, and heat resistance, so that it is hardly flawed. Use of the vessel or parts made by this method makes vacuum operations or treatment easy, and decreases the speed of a vacuum pump required to produce the same high vacuum to 1/2-1/3.

32. 发明专利

JPS54153314A REGENERATIVE APPARATUS FOR CRYOPUMP 失效
公开(公告)号：JPS54153314A
公开(公告)日：1979-12-03
申请号：JP6094278
申请日：1978-05-24
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： F04B37/08 , F04B37/06

33. 发明专利

JPS51147484A A PENNING DISCHARGE SPUTTER FILM FORMING APPARATUS 失效
公开(公告)号：JPS51147484A
公开(公告)日：1976-12-17
申请号：JP7092975
申请日：1975-06-13
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/34 , C23C14/56
摘要： PURPOSE:An apparatus for forming a film on a wire-or strip-form continuous body.

34. 发明专利

JPS51119508A CRYOSORPTION PUMP 失效
公开(公告)号：JPS51119508A
公开(公告)日：1976-10-20
申请号：JP4435075
申请日：1975-04-14
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA , KOMIYA MUNEHARU
IPC分类号： F04B37/08
摘要： PURPOSE:To intend to improve working efficiency by an automatic operation of a new layer formation by gas, when a every time of a cryotemperature surface is passed in front of a gas chamber.

35. 发明专利

JPS5183168A 失效
公开(公告)号：JPS5183168A
公开(公告)日：1976-07-21
申请号：JP14890274
申请日：1974-12-27
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： H05K3/14 , C23C14/20 , C23C14/24 , C23C14/32 , C23C14/50 , C25D7/00 , H05K3/00

36. 发明专利

JPH0796259A APPARATUS AND METHOD FOR GASEOUS PHASE REMOVAL OF REFUSE FROM SURFACE OF SUBSTRATE AND PROCESS APPARATUS AND LINE 失效
公开(公告)号：JPH0796259A
公开(公告)日：1995-04-11
申请号：JP24499293
申请日：1993-09-30
申请人： OMI TADAHIRO , ULVAC CORP
发明人： OMI TADAHIRO , YAMAKAWA HIROYUKI , HAYASHI CHIKARA
IPC分类号： B08B5/02 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To remove the refuse from the surface of a substrate by providing a treatment tank, the means holding the substrate within the treatment tank, a means supplying specific gas to the surface of the substrate and a means generating Bernoulli pressure difference on the surface of the substrate. CONSTITUTION:A silicon wafer 107 is inserted in a substrate receiving tank 130 and, after the atmosphere in the tank 130 is sufficiently replaced with gas, for example, N2 gas so that the concn. of the moisture in the tank becomes 10ppm or less, the silicon wafer 107 is fixed on the support stand 108 within a vacuum treatment tank 101 through a substrate feed chamber 131. Next, an opening and closing valve 113 is opened and the N2 gas is sprayed on the silicon wafer 101 through a blowoff port 111. Further, a high pressure gas control part 117 is operated to generate intermittent pressure fluctuations from the blowoff port 111, for example, at a rate of 10 times/min. By this constitution, the blown-off N2 gas and the refuse separated from the silicon wafer 107 are discharged out of the system through an exhaust passage 122.

37. 发明专利

JPS6330989B2 失效
公开(公告)号：JPS6330989B2
公开(公告)日：1988-06-21
申请号：JP20367483
申请日：1983-11-01
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： C23C14/34

38. 发明专利

JPS63111938A VACUUM TREATING EQUIPMENT 失效
公开(公告)号：JPS63111938A
公开(公告)日：1988-05-17
申请号：JP25463986
申请日：1986-10-28
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA
IPC分类号： B01J3/02 , B01J3/03
摘要： PURPOSE:To prevent the infiltration of the harmful atmosphere into a vacuum treating chamber by providing an universal joint-type communicating mechanism capable of introducing purge gas into the vacuum treating chamber only when the vacuum treating chamber communicates with a equipment for delivering and discharging the material to be treated. CONSTITUTION:A vacuum valve 3 is closed, the adjustable joint-type communicating mechanism 13 is blocked, the inside of the vacuum treating chamber 1 is evacuated to a desired vacuum by an exhauster 2, and then the material is treated in the vacuum treating chamber 1. After the material is treated, the gas is again introduced through the universal joint-type communicating mechanism 13 to turn off the vacuum in the vacuum treating chamber 1, the vacuum valve 3 is opened, and the transport equipment 8 is lifted up and down and rotated to transport the material to be treated into the purging container 4 from the vacuum treating chamber 1. During the transportation of the material to be treated, the gas is introduced by the purge gas supply equipment 9 to prevent the infiltration of the atmosphere into the purging container 4.

39. 发明专利

JPS6258250A PHOTOMASK NEGATIVE HAVING PROTECTIVE FILM ON REAR FACE 失效
公开(公告)号：JPS6258250A
公开(公告)日：1987-03-13
申请号：JP19728686
申请日：1986-08-25
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA , YANA KIMITACHI
IPC分类号： G03F1/00 , G03F1/48 , G03F1/72 , H01L21/027
摘要： PURPOSE:To prevent the generation of mold during preservation in the atm. by providing a film consisting of a material which is normally used for an antireflection film of a photomask original on said original and having a mold- proof protective film consisting of silicon dioxide on said film. CONSTITUTION:The film consisting of the material commonly used for the antireflection film of the photomask original is provided on the other surface of a glass substrate of the photomask original having a light shielding layer on one surface of the glass substrate and further the mold-proof protective film consisting of silicon dioxide is provided on such film. The film directly provided on the rear face (glass substrate surface on the side opposite from the surface having the light shielding layer) of the photomask original is preferably made of the material normally used to constitute the antireflection film to be formed on the surface of the light shielding layer of the photomask original, for example, MgF2, TiO2, CeO2, ZnS, LiS, etc. The generation of mold is thus pervented and the effect of improving the optical characteristic of the mask and preventing static electricity, etc. is obtd.

40. 发明专利

JPS6157473B2 失效
公开(公告)号：JPS6157473B2
公开(公告)日：1986-12-06
申请号：JP21204181
申请日：1981-12-30
申请人： ULVAC CORP
发明人： HAYASHI CHIKARA , KOMYA MUNEHARU , OOWA KYONORI
IPC分类号： F04B37/02 , F04B37/08 , F04B37/14 , F04B37/16

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