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31. 发明申请

US20070105260A1 Nitride-based semiconductor device and production method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070105260A1
公开(公告)日：2007-05-10
申请号：US11595064
申请日：2006-11-08
申请人： Mayuko Fudeta
发明人： Mayuko Fudeta
IPC分类号： H01L21/00 , H01L33/00 , H01L21/4763
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/40
摘要： A method of producing a nitride-based semiconductor device includes the steps of forming a releasing layer on a substrate for facilitating separation of the substrate; and forming at least one nitride-based semiconductor layer on the releasing layer. As the releasing layer, or in place of the releasing layer, at least one conductive film may be formed on the substrate.
摘要翻译：一种制造氮化物类半导体器件的方法包括以下步骤：在衬底上形成用于促进衬底分离的释放层; 以及在所述释放层上形成至少一个氮化物基半导体层。作为释放层，或者代替剥离层，可以在基板上形成至少一个导电膜。

32. 发明授权

US07847312B2 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07847312B2
公开(公告)日：2010-12-07
申请号：US12232248
申请日：2008-09-12
申请人： Mayuko Fudeta
发明人： Mayuko Fudeta
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L23/552 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor light-emitting device including a first n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer in this order, and further including an electrode formed of a transparent conductive film on the second n-type nitride semiconductor layer is provided. The nitride semiconductor light-emitting device has improved light extraction efficiency. The electrode formed of a transparent conductive film is preferably formed on a part of a surface of the second n-type nitride semiconductor layer.
摘要翻译：依次包括第一n型氮化物半导体层，发光层，p型氮化物半导体层和第二n型氮化物半导体层的氮化物半导体发光器件，还包括形成的电极设置在第二n型氮化物半导体层上的透明导电膜。氮化物半导体发光器件具有提高的光提取效率。由透明导电膜形成的电极优选形成在第二n型氮化物半导体层的一部分表面上。

33. 发明申请

US20100032701A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100032701A1
公开(公告)日：2010-02-11
申请号：US12461184
申请日：2009-08-04
申请人： Mayuko Fudeta
发明人： Mayuko Fudeta
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/387 , H01L33/42 , H01L2933/0016
摘要： A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.
摘要翻译：一种氮化物半导体发光器件，其依次包括由电介质材料，透明导电层，p型氮化物半导体层，发光层和n型氮化物半导体层构成的反射层，以及制造方法提供相同的。透明导电层优选由导电性金属氧化物或n型氮化物半导体构成，并且由电介质材料构成的反射层优选具有通过交替层叠由折射率高的介电材料制成的层而获得的多层结构以及由具有低折射率的电介质材料制成的层。

34. 发明授权

US07645622B2 Method of producing nitride-based semiconductor device, and light-emitting device produced thereby 失效
标题翻译：生产氮化物基半导体器件的方法和由此制造的发光器件
公开(公告)号：US07645622B2
公开(公告)日：2010-01-12
申请号：US11408689
申请日：2006-04-20
申请人： Mayuko Fudeta , Hiroshi Nakatsu
发明人： Mayuko Fudeta , Hiroshi Nakatsu
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/12 , H01S5/0213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN (0≦x, 0≦y, x+y
摘要翻译：一种生产氮化物基半导体器件的方法包括以下步骤：使In x Al y Ga 1-x-y N（0≤x≤0,0≤y，x + y <1）缓冲层（2; 12; 22; 32; 42 ）在第一衬底温度下在衬底（1; 11; 21; 31; 41）上，并在第二衬底上在缓冲层上生长第一导电型氮化物基半导体层（4; 14; 24; 34; 44）基板温度。第一个温度高于第二个温度。

35. 发明申请

US20070202621A1 Method of manufacturing nitride semiconductor light emitting device 审中-公开
标题翻译：制造氮化物半导体发光器件的方法
公开(公告)号：US20070202621A1
公开(公告)日：2007-08-30
申请号：US11706267
申请日：2007-02-15
申请人： Satoshi Komada , Mayuko Fudeta
发明人： Satoshi Komada , Mayuko Fudeta
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0217 , H01S5/0422 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf) is provided. The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition using a nitrogen-containing gas as a carrier gas, such that the n-side GaN layer is formed between the n-type contact layer and the active layer.
摘要翻译：提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成，方法包括通过使用含氮气体作为载气的有机金属气相沉积来形成n侧GaN层的步骤，使得n型GaN层形成在n型接触层和有源层之间。

36. 发明申请

US20070045563A1 Fabricating method of semiconductor light-emitting device 有权
标题翻译：半导体发光器件的制造方法
公开(公告)号：US20070045563A1
公开(公告)日：2007-03-01
申请号：US11510065
申请日：2006-08-24
申请人： Mayuko Fudeta
发明人： Mayuko Fudeta
IPC分类号： G01J1/58 , G01T1/10 , F21V9/16
CPC分类号： H01L33/0079
摘要： A fabricating method of a semiconductor light-emitting device includes the step of forming a wafer including a multi-layered semiconductor film epitaxially grown on a base substrate and containing an active layer, the step of performing pass/fail judgment of the active layer by photo-exciting the active layer in the wafer and by measuring emission intensity from the active layer at least at two temperature points, and the step of forming a light-emitting device structure with the multi-layered semiconductor film containing the active layer judged to be of good quality in the pass/fail judgment.
摘要翻译：一种半导体发光装置的制造方法，其特征在于，包括：在基板上外延生长并含有有源层的包含多层半导体膜的晶片的形成工序，通过照片进行有源层的通过/不合格判断的工序 - 激活晶片中的有源层并且至少在两个温度点测量有源层的发射强度，并且将包含有源层的多层半导体膜形成发光器件结构的步骤判定为通过/失败判断质量好。

37. 发明授权

US09070805B2 Nitride semiconductor light-emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US09070805B2
公开(公告)日：2015-06-30
申请号：US13533649
申请日：2012-06-26
申请人： Mayuko Fudeta , Satoshi Komada , Ryu Kaihara
发明人： Mayuko Fudeta , Satoshi Komada , Ryu Kaihara
IPC分类号： H01L27/15 , H01L29/06 , H01L31/072 , H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , H01L33/04 , H01L33/22 , H01L33/32 , H01L2933/0033
摘要： A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
摘要翻译：氮化物半导体发光器件具有第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的超晶格层，设置在超晶格层上的有源层和设置在超晶格层上的第二导电型氮化物半导体层在活动层。超晶格层的平均载流子浓度高于活性层的平均载流子浓度。

38. 发明授权

US09029884B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US09029884B2
公开(公告)日：2015-05-12
申请号：US13611924
申请日：2012-09-12
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

39. 发明授权

US08742440B2 Nitride semiconductor light-emitting element and method for producing same 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US08742440B2
公开(公告)日：2014-06-03
申请号：US13579174
申请日：2011-02-17
申请人： Mayuko Fudeta , Eiji Yamada
发明人： Mayuko Fudeta , Eiji Yamada
IPC分类号： H01L33/00 , H01L33/12 , H01L33/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/04 , H01L33/12 , H01L33/20
摘要： Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain Al, the average Al composition of the p-type nitride semiconductor layer 1 is equivalent to the average Al composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.
摘要翻译：公开了一种氮化物半导体发光元件，其包括在氮化物半导体有源层上顺序放置的p型氮化物半导体层1，p型氮化物半导体层2和p型氮化物半导体层3，其中p p型氮化物半导体层1和p型氮化物半导体层2各自含有Al，p型氮化物半导体层1的平均Al组成等价于p型氮化物半导体层2的平均Al组成，p 型氮化物半导体层3具有比p型氮化物半导体层2更小的带隙，p型氮化物半导体层2的p型杂质浓度和p型氮化物半导体的p型杂质浓度层3都低于p型氮化物半导体层1的p型杂质浓度，及其制造方法。

40. 发明授权

US08119428B2 Method of manufacturing nitride semiconductor light emitting device 有权
公开(公告)号：US08119428B2
公开(公告)日：2012-02-21
申请号：US11707058
申请日：2007-02-16
申请人： Satoshi Komada , Mayuko Fudeta
发明人： Satoshi Komada , Mayuko Fudeta
IPC分类号： H01L21/20
摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

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