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31. 发明授权

US4853348A Process for manufacture of a semiconductor memory device 失效
标题翻译：半导体存储器件的制造工艺
公开(公告)号：US4853348A
公开(公告)日：1989-08-01
申请号：US137298
申请日：1987-12-22
申请人： Natsuro Tsubouchi , Masafumi Kimata
发明人： Natsuro Tsubouchi , Masafumi Kimata
IPC分类号： H01L27/10 , H01L27/108 , H01L29/92
CPC分类号： H01L29/92 , H01L27/10829 , Y10S148/014 , Y10S438/901
摘要： A semiconductor memory device such as a MOS dynamic RAM comprises transistor portions (2, 3 and 5) for writing and reading a signal and capacitor portions (1, 2, 6 and 9) by pn junction for storing a signal. The capacitor portions have preferably as large a capacitance as possible. For this purpose, a capacitor hole (7) is formed in a p type semiconductor substrate (6) and an n type semiconductor region (9) is provided along the capacitor hole (7) so that the pn junction area therebetween is increased and the capacitance is made large.
摘要翻译：诸如MOS动态RAM的半导体存储器件包括用于通过pn结写入和读取信号和电容器部分（1,2,6和9）以存储信号的晶体管部分（2,3和5）。电容器部分最好具有尽可能大的电容。为此，在p型半导体衬底（6）中形成电容器孔（7），并且沿着电容器孔（7）设置n型半导体区域（9），使得其间的pn结面积增加，并且电容做大了

32. 发明授权

US4803709A Elimination of KTC noise in a charge coupled device 失效
标题翻译：在电荷耦合器件中消除KTC噪声
公开(公告)号：US4803709A
公开(公告)日：1989-02-07
申请号：US78198
申请日：1987-07-27
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H01L29/762 , G11C19/28 , H01L21/339 , H01L29/78
CPC分类号： G11C19/285
摘要： An output circuit of a charge coupled device comprises a transistor (4, 5, 6) having a floating diffusion (5) provided to receive a series of signal charges from a charge transfer section. Each signal charge is transferred to the floating diffusion in synchronism with a drive clock applied to the charge transfer section. The transistor has a gate electrode (4) connected to receive a reset clock (.phi.R') applied at an interval longer than the period of the drive clock.
摘要翻译：电荷耦合器件的输出电路包括具有浮置扩散（5）的晶体管（4,5,6），用于从电荷转移部分接收一系列信号电荷。每个信号电荷与施加到电荷转移部分的驱动时钟同步地传送到浮动扩散。晶体管具有连接用于接收以比驱动时钟的周期更长的间隔施加的复位时钟（phi R'）的栅电极（4）。

33. 发明授权

US4577233A Solid image-pickup device 失效
标题翻译：固体摄像装置
公开(公告)号：US4577233A
公开(公告)日：1986-03-18
申请号：US500198
申请日：1983-06-01
申请人： Masafumi Kimata
发明人： Masafumi Kimata
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L31/08 , H01L31/10 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/365 , H04N5/3728 , H04N3/14
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A solid image-pickup device having a scanning mechanism for reading and outputting outputs from photo-detectors. The scanning mechanism includes at least one charge transferring unit in which a plurality of MOS gates are arranged side by side. A MOS gate control unit applies signals to the plurality of MOS gates so as to form potential wells below all the gates of the charge transferring unit at a first period, to inject a signal charge from a photo-detector in the potential well across a transfer gate beneath the MOS gates at a second period, and causes the potential wells to successively be removed in the direction of the charge transfer. As a result, the signal charges below the MOS gates of the charge transferring unit are moved during a third period.
摘要翻译：具有用于读取和输出光电检测器的输出的扫描机构的固体图像拾取装置。扫描机构包括至少一个电荷转移单元，其中多个MOS栅极并排布置。 MOS栅极控制单元将信号施加到多个MOS栅极，以便在第一周期在电荷转移单元的所有栅极下方形成势阱，以在电势阱中将来自光电检测器的信号电荷注入到传输在第二时段的MOS栅极下方，并且使电势阱在电荷转移的方向上依次被去除。结果，电荷转移单元的MOS栅极之下的信号电荷在第三期间被移动。

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