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32. 发明申请

US20080243460A1 Precursor selection method for chemical vapor deposition techniques 失效
标题翻译：化学气相沉积技术的前体选择方法
公开(公告)号：US20080243460A1
公开(公告)日：2008-10-02
申请号：US12070389
申请日：2008-02-14
申请人： Timothy P. Holme , Friedrick B. Prinz , Masayuki Sugawara
发明人： Timothy P. Holme , Friedrick B. Prinz , Masayuki Sugawara
IPC分类号： G06G7/58
CPC分类号： C23C16/404 , C23C16/409 , C23C16/44 , C30B23/02 , C30B25/02
摘要： A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >TΔS, where T is a reaction temperature and ΔS is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).
摘要翻译：提供了一种用于薄膜沉积的前体选择方法，其包括一组前体，使用规则集来选择用于热稳定性，高生长速率和低污染的一种或多种候选前体。模拟和优化候选几何和组成几何，确定候选人和组成部分的债券强度。规则集是基于结合强度，其比较候选配体之间或金属原子与一个配体之间的一组键强度之间的分子和组分能量。规则集要求金属原子 - 配体键的介于0.2和3eV之间，金属原子 - 配体键强度小于其他候选物的金属原子 - 配体键强度。金属原子 - 配体键合强度> TDeltaS，其中T是反应温度，ΔS是反应熵变和配体内的键（其中（配体键））（金属原子和配体键）。

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