会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 31. 发明申请
    • Human Emulation Robot System
    • 人体仿真机器人系统
    • US20070038331A1
    • 2007-02-15
    • US11465710
    • 2006-08-18
    • David Hanson
    • David Hanson
    • G06F19/00C08J9/00G05B19/18G05B15/00
    • G06F19/00B25J11/0015G06N3/008
    • One aspect of the invention is a robot system comprising a flexible artificial skin operable to be mechanically flexed under the control of a computational system. The system comprises a first set of software instructions operable to receive and process input images to determine that at least one human likely is present. The system comprises a second set of software instructions operable to determine a response to a perceived human presence, whereby the computational system shall output signals corresponding to the response, such that, in at least some instances, the output signals cause the controlled flexing of the artificial skin.
    • 本发明的一个方面是一种机器人系统,其包括可操作以在计算系统的控制下机械地弯曲的柔性人造皮肤。 该系统包括可操作以接收和处理输入图像以确定至少一个人可能存在的第一组软件指令。 该系统包括第二组软件指令,其可操作以确定对感知到的人的存在的响应,由此计算系统应输出与该响应相对应的信号,使得在至少一些情况下,输出信号导致受控的弯曲 人造皮肤。
    • 33. 发明申请
    • STRUCTURE AND METHOD OF MAKING FIELD EFFECT TRANSISTOR HAVING MULTIPLE CONDUCTION STATES
    • 制造具有多个导电状态的场效应晶体管的结构和方法
    • US20060273393A1
    • 2006-12-07
    • US11160055
    • 2005-06-07
    • Dureseti ChidambarraoDavid OnsongoDavid Hanson
    • Dureseti ChidambarraoDavid OnsongoDavid Hanson
    • H01L29/43
    • H01L21/2822H01L29/42368H01L29/512H01L29/518
    • A field effect transistor (“FET”) is provided has a semiconductor region including a channel region, a source region and a drain region and a gate conductor overlying the channel region. Such FET has a first threshold voltage having a first magnitude and a second threshold voltage having a second magnitude higher than the first magnitude, both threshold voltages being effective at the same time. The FET is operable in response to a gate-source voltage between the gate conductor and the source region in multiple states including at least: a) an essentially nonconductive state when a magnitude of the gate-source voltage is less than the first magnitude and less than the second magnitude, the source-drain current then being at most a negligible value; b) a first conductive state when the magnitude of the gate-source voltage is greater than the first magnitude and less than the second magnitude, the source-drain current then having a first operating value about ten or more times higher than the negligible value; and c) a second conductive state when the magnitude of the gate-source voltage is greater than first magnitude and the second magnitude, in which state the source-drain current has a second operating value ten or more times higher than the first operating value.
    • 提供场效应晶体管(“FET”)具有包括沟道区,源极区和漏极区以及覆盖沟道区的栅极导体的半导体区。 这样的FET具有第一阈值电压和第二阈值电压,第一阈值电压具有比第一幅度高的第二幅度,两个阈值电压同时有效。 FET可响应于多个状态的栅极导体和源极区域之间的栅极 - 源极电压而工作,包括至少:a)当栅极 - 源极电压的幅度小于第一个幅度并且较小时,基本上是非导通状态 那么源极 - 漏极电流最大可以忽略不计。 b)当栅极 - 源极电压的大小大于第一幅度且小于第二幅度时,第一导电状态,源极 - 漏极电流的第一个操作值比可忽略的值高大约十倍或更多倍; 以及c)当所述栅极 - 源极电压的大小大于所述第一幅度和所述第二幅度时,所述第二导通状态,其中所述源极 - 漏极电流具有比所述第一操作值高十倍或更多倍的第二操作值。
    • 36. 发明授权
    • Hierarchical prefetch for semiconductor memories
    • 半导体存储器的分层预取
    • US6081479A
    • 2000-06-27
    • US333539
    • 1999-06-15
    • Brian JiToshiaki KirihataGerhard MuellerDavid Hanson
    • Brian JiToshiaki KirihataGerhard MuellerDavid Hanson
    • G11C7/10G11C8/00
    • G11C7/1039
    • A semiconductor memory in accordance with the present invention includes a data path including a plurality of hierarchical stages, each stage including a bit data rate which is different from the other stages. At least two prefetch circuits are disposed between the stages. The at least two prefetch circuits include at least two latches for receiving data bits and storing the data bits until a next stage in the hierarchy is capable of receiving the data bits. The at least two prefetch circuits are coupled between stages such that an overall data rate per stage between stages are substantially equal. Control signals control the at least two latches such that prefetch circuits maintain the overall data rate between the stages.
    • 根据本发明的半导体存储器包括包括多个分层级的数据路径,每个级包括与其他级不同的位数据速率。 至少两个预取电路设置在各级之间。 至少两个预取电路包括用于接收数据位并存储数据位的至少两个锁存器,直到层级中的下一级能够接收数据位。 所述至少两个预取电路耦合在级之间,使得级之间每级的总体数据速率基本相等。 控制信号控制至少两个锁存器,使得预取电路保持级之间的总体数据速率。
    • 40. 发明申请
    • Positioning correction system and method for single and multi-channel ground penetrating radar
    • 单通道和多通道地面穿透雷达定位校正系统及方法
    • US20090109081A1
    • 2009-04-30
    • US12262140
    • 2008-10-30
    • Kenneth J. RyersonKeith J. SjostromDavid Hanson
    • Kenneth J. RyersonKeith J. SjostromDavid Hanson
    • G01S13/00
    • G01V3/12G01S13/885
    • A mobile geophysical instrument produces geophysical data sets each associated with a position computed by use of a position sensor. A variable time delay results between a time when data for each geophysical data set is collected and a time when a position associated with each geophysical data set is recorded. A module receives distance transducer data and includes circuitry configured to generate a module signal based on trigger signals from the distance transducer and a calibration value. A data acquisition system (DAS) receives geophysical data sets from the geophysical instrument, positioning data from the positioning sensor, and the module signals. The DAS generates a DAS timestamp in response to each module signal and associates the DAS timestamp with each geophysical data set and a position associated with the geophysical data set, so as to substantially eliminate the variable time delay.
    • 移动地球物理仪器产生每个与通过使用位置传感器计算的位置相关联的地球物理数据集。 在收集每个地球物理数据集的数据和记录与每个地球物理数据集相关联的位置的时间之间的时间可变。 模块接收距离传感器数据,并且包括经配置以基于来自距离传感器的触发信号和校准值生成模块信号的电路。 数据采集​​系统(DAS)从地球物理仪器接收地球物理数据集,定位传感器定位数据和模块信号。 DAS响应于每个模块信号生成DAS时间戳,并将DAS时间戳与每个地球物理数据集和与地球物理数据集相关联的位置相关联,以便基本上消除可变时间延迟。