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31. 发明申请

US20090190875A1 Optical Modulator Including Electrically Controlled Ring Resonator 有权
标题翻译：包括电子控制环谐振器的光学调制器
公开(公告)号：US20090190875A1
公开(公告)日：2009-07-30
申请号：US12243782
申请日：2008-10-01
申请人： Alexandre Bratkovski , Theodore I. Kamins
发明人： Alexandre Bratkovski , Theodore I. Kamins
IPC分类号： G02F1/035 , H01L33/00
CPC分类号： G02F1/025 , G02F2203/055 , G02F2203/15
摘要： An optical modulator and related methods are described. In accordance with one embodiment, the optical modulator comprises a waveguide for guiding an optical signal, and further comprises a ring resonator disposed in evanescent communication with the waveguide for at least one predetermined wavelength of the optical signal. The optical modulator further comprises a semiconductor pnpn junction structure that is at least partially coextensive with at least a portion of a resonant light path of the ring resonator. The optical modulator is configured such that the semiconductor pnpn junction structure receives an electrical control signal thereacross. The electrical control signal controls a free carrier population in the resonant light path where coextensive with the pnpn junction structure. A resonance condition of the ring resonator at the predetermined wavelength is thereby controlled by the electrical control signal, and the optical signal is thereby modulated according to the electrical control signal.
摘要翻译：描述了光学调制器及相关方法。根据一个实施例，光学调制器包括用于引导光学信号的波导，并且还包括环形谐振器，该环形谐振器设置成与光波导的至少一个预定波长的与波导的渐逝通信。光调制器还包括半导体pnpn结结构，其至少部分地与环形谐振器的谐振光路的至少一部分共同延伸。光调制器被配置为使得半导体pnpn结结构在其上接收电控信号。电控制信号控制共振光路中与pnpn结结构共同延伸的自由载流子。因此，通过电气控制信号控制环形谐振器在预定波长处的谐振状态，并且由此根据电气控制信号调制光信号。

32. 发明申请

US20090074368A1 Electrical contact apparatus for optical waveguides 有权
公开(公告)号：US20090074368A1
公开(公告)日：2009-03-19
申请号：US11900714
申请日：2007-09-13
申请人： Charles M. Santori , Duncan Stewart , Philip J. Kuekes , Theodore I. Kamins
发明人： Charles M. Santori , Duncan Stewart , Philip J. Kuekes , Theodore I. Kamins
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00 , G02F1/01708 , G02F2203/15
摘要： An optical apparatus includes a waveguide configured to propagate optical energy; an electrical contact surface; and a semiconductor electrical interconnect extending from a first surface of the optical waveguide to electrical communication with the electrical contact surface. The semiconductor electrical interconnect comprises a geometry configured to substantially confine the optical energy to the waveguide.

33. 发明申请

US20080211520A1 Semiconducting nanowire fluid sensor 审中-公开
标题翻译：半导体纳米线流体传感器
公开(公告)号：US20080211520A1
公开(公告)日：2008-09-04
申请号：US11804559
申请日：2007-05-18
申请人： Theodore I. Kamins
发明人： Theodore I. Kamins
IPC分类号： G01R27/08 , H01L29/00
CPC分类号： G01N27/127 , B82Y15/00 , Y10S977/70 , Y10S977/72 , Y10S977/731
摘要： Nanowire fluid sensors are provided. The fluid sensors comprise a first electrode, a second electrode, and at least one nanowire between the first electrode and the second electrode. Each nanowire is connected at a first end to the first electrode and at a second end to the second electrode. Methods of fabricating and operating the fluid sensor are also provided.
摘要翻译：提供纳米线流体传感器。流体传感器包括第一电极，第二电极和在第一电极和第二电极之间的至少一个纳米线。每个纳米线在第一端连接到第一电极，在第二端连接到第二电极。还提供了制造和操作流体传感器的方法。

34. 发明申请

US20080179586A1 ELECTRONIC DEVICE AND METHOD OF MAKING THE SAME 失效
标题翻译：电子设备及其制造方法
公开(公告)号：US20080179586A1
公开(公告)日：2008-07-31
申请号：US11668136
申请日：2007-01-29
申请人： Theodore I. Kamins
发明人： Theodore I. Kamins
IPC分类号： H01L29/06 , H01L21/205
CPC分类号： H01L51/0508 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/73 , H01L29/80 , H01L51/0048 , Y10S438/962 , Y10S977/762
摘要： An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.
摘要翻译：电子器件包括第一导电类型的初级纳米线和从初级纳米线向外延伸的第二导电类型的次级纳米线。第二导电类型的掺杂区域从次级纳米线延伸到初级纳米线的至少一部分。

35. 发明申请

US20080171430A1 Methods of forming through-substrate interconnects 有权
标题翻译：形成贯穿衬底互连的方法
公开(公告)号：US20080171430A1
公开(公告)日：2008-07-17
申请号：US11654338
申请日：2007-01-17
申请人： Theodore I. Kamins
发明人： Theodore I. Kamins
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L24/82 , H01L2221/1094 , H01L2924/14 , Y10S977/89 , Y10S977/892 , H01L2924/00
摘要： In one embodiment of a method of forming at least one through-substrate interconnect, a semiconductor substrate having first surface and an opposing second surface is provided. At least one opening is formed in the semiconductor substrate to extend from the first surface to an intermediate depth within the semiconductor substrate. The at least one opening is partially defined by a base. At least one metal-catalyst nanoparticle is provided on the base. Conductive material is deposited within the at least one opening under conditions in which the metal-catalyst nanoparticle promotes deposition of the conductive material. Material of the semiconductor substrate may be removed from the second surface to expose a portion of the conductive material filling the at least one opening. In another embodiment, instead of using the nanoparticle, the conductive material may be selected to selectively deposit on the base partially defining the at least one opening.
摘要翻译：在形成至少一个贯穿衬底互连的方法的一个实施例中，提供了具有第一表面和相对的第二表面的半导体衬底。在半导体衬底中形成至少一个开口，以从半导体衬底内的第一表面延伸到中间深度。至少一个开口部分地由基座限定。在基底上提供至少一种金属催化剂纳米颗粒。在金属催化剂纳米颗粒促进导电材料的沉积的条件下，导电材料沉积在至少一个开口内。可以从第二表面去除半导体衬底的材料以暴露填充至少一个开口的导电材料的一部分。在另一个实施方案中，代替使用纳米颗粒，可以选择导电材料以选择性地沉积在部分限定至少一个开口的基部上。

36. 发明授权

US07391109B2 Integrated circuit interconnect 有权
标题翻译：集成电路互连
公开(公告)号：US07391109B2
公开(公告)日：2008-06-24
申请号：US11438167
申请日：2006-05-22
申请人： Theodore I. Kamins , Philip J. Kuekes
发明人： Theodore I. Kamins , Philip J. Kuekes
IPC分类号： H01L21/50
CPC分类号： H01L27/0688 , H01L21/8221 , H01L2924/00011 , H01L2924/0002 , H01L2924/00012 , H01L2224/80001
摘要： An embodiment of an integrated circuit comprises active components in more than one active layer. A first conductor in one active layer is operative to produce a static electric field that controls a first active element in an adjacent active layer.
摘要翻译：集成电路的实施例包括多于一个有源层中的有源部件。一个有源层中的第一导体可操作地产生控制相邻有源层中的第一有源元件的静电场。

37. 发明授权

US07378347B2 Method of forming catalyst nanoparticles for nanowire growth and other applications 失效
标题翻译：形成用于纳米线生长和其他应用的催化剂纳米颗粒的方法
公开(公告)号：US07378347B2
公开(公告)日：2008-05-27
申请号：US10281678
申请日：2002-10-28
申请人： Theodore I. Kamins , Philip J. Kuekes , Yong Chen
发明人： Theodore I. Kamins , Philip J. Kuekes , Yong Chen
IPC分类号： H01L21/461
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/605 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.
摘要翻译：提供用于形成具有纳米级尺寸的催化区域的预定图案的方法用于纳米线的生长。所述方法包括一个或多个纳米压印步骤，以产生由非催化材料限定的催化材料的催化纳米级或纳米尺度区域的阵列。

38. 发明申请

US20080093693A1 Nanowire sensor with variant selectively interactive segments 审中-公开
标题翻译：具有变体选择性交互式段的纳米线传感器
公开(公告)号：US20080093693A1
公开(公告)日：2008-04-24
申请号：US11584148
申请日：2006-10-20
申请人： Theodore I. Kamins , Shashank Sharma , Philip J. Kuekes
发明人： Theodore I. Kamins , Shashank Sharma , Philip J. Kuekes
IPC分类号： H01L29/84
CPC分类号： A61B5/05 , A61B5/14546
摘要： A nanowire sensor is operable to detect one or more species. The nanowire sensor includes a nanowire having a plurality of variant selectively interactive segments. Each of the variant selectively interactive segments are configured to simultaneously interact with the species to modulate the conductance of the nanowire for detecting the species.
摘要翻译：纳米线传感器可操作以检测一种或多种物质。纳米线传感器包括具有多个变体选择性交互部分的纳米线。每个变体选择性交互节段被配置为与物种同时相互作用以调节用于检测物种的纳米线的电导。

39. 发明授权

US07208094B2 Methods of bridging lateral nanowires and device using same 失效
标题翻译：桥接横向纳米线的方法及其使用方法
公开(公告)号：US07208094B2
公开(公告)日：2007-04-24
申请号：US10738176
申请日：2003-12-17
申请人： M. Saif Islam , Theodore I. Kamins , Shashank Sharma
发明人： M. Saif Islam , Theodore I. Kamins , Shashank Sharma
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
摘要翻译：半导体纳米线横向生长。生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。自组装纳米线的方法在激活的电极对之间桥接纳米线。控制纳米线生长的方法在垂直表面形成表面不规则性。电子设备包括横向生长的纳米级互连。

40. 发明授权

US06706204B2 Method of fabricating and a device that includes nanosize pores having well controlled geometries 失效
标题翻译：制造方法和包括具有良好控制几何形状的纳米尺度孔的装置
公开(公告)号：US06706204B2
公开(公告)日：2004-03-16
申请号：US10027598
申请日：2001-12-19
申请人： Daniel B. Roitman , Dietrich W. Vook , Theodore I. Kamins
发明人： Daniel B. Roitman , Dietrich W. Vook , Theodore I. Kamins
IPC分类号： H01L2100
CPC分类号： B81C1/00119 , B81B2201/058 , B81B2203/0338 , B81B2203/0353 , B82Y5/00 , G01N33/48721
摘要： A method of fabricating nanosized holes with controlled geometries employs tools and methods developed in the microelectronics industry. The method exploits the fact that epitaxially grown film thicknesses can be controlled within a few atomic monolayers and that by using etching techniques, trenches and channels can be created that are only a few nanometers wide. The method involves bonding two shallow channels at an angle such that a nanopore is defined by the intersection. Thus, a nanopore-defining device includes a nanopore with dimensions that are determined by the dimensions and orientations of the intersecting channels, with the dimensions being accurately controlled within a few monolayers.
摘要翻译：制造具有受控几何形状的纳米孔的方法采用在微电子工业中开发的工具和方法。该方法利用了外延生长的膜厚度可以控制在几个原子单层内的事实，并且通过使用蚀刻技术，可以产生只有几纳米宽的沟槽和沟道。该方法包括以一定角度键合两个浅沟道，使得纳米孔由交点定义。因此，纳米孔限定装置包括具有由相交通道的尺寸和取向决定的尺寸的纳米孔，其尺寸被准确地控制在几个单层内。

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