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    • 37. 发明授权
    • Non-radiatively pumped wavelength converter
    • 非辐射泵浦波长转换器
    • US08455904B2
    • 2013-06-04
    • US13264833
    • 2010-04-19
    • Craig R. SchardtCatherine A. Leatherdale
    • Craig R. SchardtCatherine A. Leatherdale
    • H01L33/00
    • H01L27/156H01L33/08H01L33/20H01L33/38H01L33/502H01L2933/0083
    • A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.
    • 光源具有设置在第一掺杂半导体层(206)和第二掺杂半导体层(208)之间的有源层(204)。 有源层具有与第一波长的光相关联的能级。 发光元件(216)位于第一掺杂半导体层(206)的表面上,用于由有源层进行非辐射激励。 发光元件能够以不同于第一波长的第二波长发光。 在一些实施例中,栅电极(213)设置在第一掺杂半导体层上,并且限定第一掺杂层的表面的开放区域(214),第一多个发光元件位于开放区域中。 在一些实施例中,第二多个发光元件设置在第一多个发光元件上,用于通过至少一些第一多个发光元件进行非辐射激励。
    • 39. 发明申请
    • NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    • 非反射式泵浦波长转换器
    • US20120037885A1
    • 2012-02-16
    • US13264833
    • 2010-04-19
    • Craig R. SchardtCatherine A. Leatherdale
    • Craig R. SchardtCatherine A. Leatherdale
    • H01L33/04
    • H01L27/156H01L33/08H01L33/20H01L33/38H01L33/502H01L2933/0083
    • A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.
    • 光源具有设置在第一掺杂半导体层(206)和第二掺杂半导体层(208)之间的有源层(204)。 有源层具有与第一波长的光相关联的能级。 发光元件(216)位于第一掺杂半导体层(206)的表面上,用于由有源层进行非辐射激励。 发光元件能够以不同于第一波长的第二波长发光。 在一些实施例中,栅电极(213)设置在第一掺杂半导体层上,并且限定第一掺杂层的表面的开放区域(214),第一多个发光元件位于开放区域中。 在一些实施例中,第二多个发光元件设置在第一多个发光元件上,用于通过至少一些第一多个发光元件进行非辐射激励。
    • 40. 发明申请
    • NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    • 非反射式泵浦波长转换器
    • US20120032142A1
    • 2012-02-09
    • US13264817
    • 2010-04-19
    • Catherine A. LeatherdaleCraig R. Schardt
    • Catherine A. LeatherdaleCraig R. Schardt
    • H01L33/50B82Y15/00
    • H01L27/156H01L33/502
    • A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.
    • 光源包括产生泵浦光的电致发光器件和包括用于吸收至少一些泵浦光的吸收元件的波长转换器。 第一层发光元件位于吸收元件附近,用于将能量从吸收元件非辐射传递到发光元件。 至少一些发光元件能够发射波长比泵浦光的波长长的光。 在一些实施例中,电致发光器件是发光二极管(LED),其具有位于LED有源层和发光元件之间的掺杂半导体层。 第一掺杂半导体层可以具有超过20nm的厚度。 可以定位第二层发光元件用于从第一层发光元件的非辐射能量传递。