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31. 发明申请

US20120267690A1 SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM 有权
标题翻译：固态图像拾取器件和图像拾取系统
公开(公告)号：US20120267690A1
公开(公告)日：2012-10-25
申请号：US13517357
申请日：2010-12-22
申请人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
发明人： Nobuyuki Endo , Tetsuya Itano , Kazuo Yamazaki , Kyouhei Watanabe , Takeshi Ichikawa
IPC分类号： H01L27/148
CPC分类号： H01L27/14636 , H01L27/14632 , H01L27/14643 , H01L27/1465
摘要： The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.
摘要翻译：本发明涉及一种固态图像拾取装置。该装置包括：第一基板，包括光电转换元件和被配置为从光电转换元件传送电荷的转移栅电极;第二基板，具有外围电路部分，其包括被配置为读取在光电转换元件中产生的基于信号的电荷第一和第二基板被层压。该器件还包括多层互连结构，其设置在第一衬底上，包括铝互连和多层互连结构，设置在第二衬底上，包括铜互连。

32. 发明申请

US20100123835A1 RADIO LSI DEVICE AND INTERFERING WAVE DETECTING CIRCUIT 有权
标题翻译：无线LSI设备和干扰波检测电路
公开(公告)号：US20100123835A1
公开(公告)日：2010-05-20
申请号：US12619705
申请日：2009-11-17
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H04N5/44 , H04B15/00 , H04B1/38
CPC分类号： H04N5/4403 , H04B1/1027 , H04B1/202 , H04N21/42207 , H04N21/42221 , H04N2005/4407 , H04N2005/4426
摘要： A radio LSI device includes an interfering wave detecting circuit that receives an RSSI signal for a current transmit/receive channel. The interfering wave detecting circuit includes a field intensity determiner that determines whether or not the value of the RSSI signal is greater than a predetermined threshold value. The interfering wave detecting circuit also includes a duration counter that counts the duration of an interfering wave whose RSSI value is greater than the predetermined threshold value. The interfering wave detecting circuit also includes a duration comparator that, if the duration exceeds a duration comparative value, generates an interrupt signal. The radio LSI device changes the setting of the current transmit/receive channel in response to the interrupt signal.
摘要翻译：无线电LSI装置包括干扰波检测电路，其接收当前发送/接收信道的RSSI信号。干扰波检测电路包括确定RSSI信号的值是否大于预定阈值的场强确定器。干扰波检测电路还包括对RSSI值大于预定阈值的干扰波的持续时间进行计数的持续时间计数器。干扰波检测电路还包括持续时间比较器，如果持续时间超过持续时间比较值，则产生中断信号。无线电LSI装置响应于中断信号改变当前发送/接收信道的设置。

33. 发明授权

US07687299B2 Semiconductor apparatus, solid state image pickup device using the same, and method of manufacturing them 失效
标题翻译：半导体装置，使用该半导体装置的固体摄像装置及其制造方法
公开(公告)号：US07687299B2
公开(公告)日：2010-03-30
申请号：US10585733
申请日：2005-03-24
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14806
摘要： The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions.
摘要翻译：本发明提供了一种半导体装置，该半导体装置在同一基板上设置有至少一组掩埋沟道型第一导电型MOS晶体管和表面沟道型第一导电型MOS晶体管，其中，第一导电型杂质区设置在掩埋沟道型和表面沟道型MOS晶体管和源极漏极区之间。此外，本发明提供了一种固体摄像装置，其具有光电转换部分和在基板中包括与光电转换部分相对应地形成的多个晶体管的像素，其中多个晶体管包括掩埋沟道型第一导电型 MOS晶体管和表面沟道型第一导电型MOS晶体管，并且第一导电型杂质区设置在掩埋沟道型和表面沟道型MOS晶体管的栅电极的下方以及源极漏极区之间。

34. 发明授权

US07671365B2 Reflection type liquid crystal display apparatus and liquid crystal projector system 有权
标题翻译：反射式液晶显示装置和液晶投影系统
公开(公告)号：US07671365B2
公开(公告)日：2010-03-02
申请号：US11736139
申请日：2007-04-17
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H01L27/14 , H01L31/00 , G02F1/133
CPC分类号： G02F1/136277 , G02F1/136209 , G02F2203/02
摘要： In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region 34 of a transistor, with respect to a majority carrier, a region 36 whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region 34 connected to a reflection electrode 30 to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region 34.
摘要翻译：为了抑制由于不能通过遮光而不能防止入射光产生的电子（空穴）而不是晶体管的漏极区域34相对于多数载流子的区域36，区域36 电压被设定为低于漏极区域的电压和Q（单位电荷）的乘积的参考值的值，或者在漏极区域周围设置势垒。在这种结构中，通过将连接到反射电极30的漏区34的周边的电压控制为浮置状态，使得在半导体衬底中产生的载流子在漏区34中几乎不被引导。

35. 发明申请

US20090303425A1 REFLECTION TYPE LIQUID CRYSTAL DISPLAY APPARATUS AND LIQUID CRYSTAL PROJECTOR SYSTEM 有权
标题翻译：反射型液晶显示器和液晶投影仪系统
公开(公告)号：US20090303425A1
公开(公告)日：2009-12-10
申请号：US12540486
申请日：2009-08-13
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： G02F1/1343
CPC分类号： G02F1/136277 , G02F1/136209 , G02F2203/02
摘要： In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region 34 of a transistor, with respect to a majority carrier, a region 36 whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region 34 connected to a reflection electrode 30 to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region 34.
摘要翻译：为了抑制由于不能通过遮光而不能防止入射光产生的电子（空穴）而不是晶体管的漏极区域34相对于多数载流子的区域36，区域36 电压被设定为低于漏极区域的电压和Q（单位电荷）的乘积的参考值的值，或者在漏极区域周围设置势垒。在这种结构中，通过将连接到反射电极30的漏区34的周边的电压控制为浮置状态，使得在半导体衬底中产生的载流子在漏区34中几乎不被引导。

36. 发明授权

US07540198B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07540198B2
公开(公告)日：2009-06-02
申请号：US11597501
申请日：2005-06-13
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L9/0055
摘要： It is an object of the present invention to provide a small, yet high sensitivity semiconductor device. A semiconductor pressure sensor 1 includes an SOI substrate 2 on which a diaphragm 3 is formed and four piezo resistor elements R1 to R4 provided on the SOI substrate 2. Of the piezo resistor elements R1 to R4, two mutually facing piezo resistor elements R1 to R4 are arranged across the inside and outside of the diaphragm 3 so as to satisfy a relationship of 0.5
摘要翻译：本发明的目的是提供一种小而高灵敏度的半导体器件。半导体压力传感器1包括其上形成有隔膜3的SOI衬底2和设置在SOI衬底2上的四个压电电阻器元件R1至R4。在压电电阻器元件R1至R4中，两个相互相对的压电电阻器元件R1至R4 以隔膜3的内侧和外侧布置以满足0.5

37. 发明授权

US07026849B2 Reset circuit having synchronous and/or asynchronous modules 失效
标题翻译：具有同步和/或异步模块的复位电路
公开(公告)号：US07026849B2
公开(公告)日：2006-04-11
申请号：US10812923
申请日：2004-03-31
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H03L7/00
CPC分类号： G06F1/24
摘要： There is provided a reset circuit for reducing current consumption during resetting. A reset circuit 20 is constituted in such a manner that a pulse generation circuit 22 for generating a reset pulse signal (PRSTN) 50 from a reset signal input to an input terminal (RSTN) is connected to a plurality modules 10, 12, 14, a register 40 arranged in the module 10 is initialized based on the reset pulse signal (PRSTN) 50, a register 42 arranged in the module 12 of a next stage is initialized based on a module reset signal (MRSTN) 60 output from a control circuit 30 arranged in the module 10 of a previous stage, and a register 44 arranged in each of modules of stages thereafter, e.g., the module 14, is initialized based on a module reset signal (MRSTN) output from a control circuit 32 arranged in the module 12 of a previous stage.
摘要翻译：提供了一种用于在复位期间减少电流消耗的复位电路。复位电路20被构成为用于从输入到输入端子（RSTN）的复位信号产生复位脉冲信号（PRSTN）50的脉冲发生电路22连接到多个模块10,12,14，基于复位脉冲信号（PRSTN）50初始化配置在模块10中的寄存器40，基于从控制电路输出的模块复位信号（MRSTN）60来初始化布置在下一级的模块12中的寄存器42 30，布置在前一级的模块10中的寄存器44以及其后的模块（例如模块14）中的每个模块中的寄存器44基于从布置在模块14中的控制电路32输出的模块复位信号（MRSTN）被初始化前一阶段的模块12。

38. 发明申请

US20050220234A1 Synchronization establishment circuit and synchronization establishment method 有权
标题翻译：同步建立电路和同步建立方法
公开(公告)号：US20050220234A1
公开(公告)日：2005-10-06
申请号：US10944896
申请日：2004-09-21
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H04L7/00 , H04B7/26 , H04J3/06
CPC分类号： H04J3/0685 , H04J3/0602
摘要： A terminal is wirelessly connected to a base station. The terminal has a timer and a controller. The timer has a register for storing a beacon interval as a comparison value. The timer also includes a beacon counter for counting timer clocks. The timer also includes a comparator for generating an interrupt signal when an output value of the register and a count value of the counter match. The controller causes the counter to start counting when it receives a beacon for the first time. The controller causes the register to store the count value of the beacon counter when it receives a beacon next time. Since the beacon interval is measured using the timer clock in the terminal, instead of using the beacon interval information included in the beacon, it is unnecessary to strictly match the clock precision of the base station and the terminal, and therefore the cost of the system decreases.
摘要翻译：终端与基站无线连接。终端有定时器和控制器。定时器具有用于存储信标间隔作为比较值的寄存器。定时器还包括用于计数定时器时钟的信标计数器。定时器还包括一个比较器，用于当寄存器的输出值和计数器的计数值相匹配时产生一个中断信号。当控制器首次收到信标时，计数器开始计数。当下一次收到信标时，控制器使寄存器存储信标计数器的计数值。由于使用终端中的定时器时钟来测量信标间隔，而不是使用信标中包含的信标间隔信息，所以不必严格地匹配基站和终端的时钟精度，因此不需要系统的成本减少

39. 发明申请

US20050127415A1 Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system 有权
标题翻译：光电转换装置，光电转换装置的制造方法以及摄像系统
公开(公告)号：US20050127415A1
公开(公告)日：2005-06-16
申请号：US11003444
申请日：2004-12-06
申请人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
发明人： Hiroshi Yuzurihara , Ryuichi Mishima , Takanori Watanabe , Takeshi Ichikawa , Seiichi Tamura
IPC分类号： H01L27/146 , H01L27/148 , H01L31/10 , H01L31/113 , H01L21/00
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译：一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域底物。对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C 2

40. 发明授权

US06339459B1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US06339459B1
公开(公告)日：2002-01-15
申请号：US09182456
申请日：1998-10-30
申请人： Takeshi Ichikawa , Katsumi Kurematsu , Osamu Koyama
发明人： Takeshi Ichikawa , Katsumi Kurematsu , Osamu Koyama
IPC分类号： G02F11325
CPC分类号： G02F1/133621 , G02F1/133526 , G02F1/133723 , G02F1/1393 , G02F2001/133742 , G02F2203/02
摘要： A liquid crystal display device comprises a matrix substrate in which a plurality of pixel electrodes are arrayed in a matrix pattern correspondence to colors of R (Red), G (Green), and B (Blue), an opposite substrate in which an opposite electrode is placed opposite to the pixel electrodes, and a liquid crystal material having negative dielectric anisotropy, the liquid crystal material being placed between the matrix substrate and the opposite substrate, wherein there are provided an alignment layer of polyimide with a vertical alignment property and a microlens array having a plurality of microlenses, the microlenses being provided at a pitch of two pixels relative to an array of the pixel electrodes.
摘要翻译：液晶显示装置包括矩阵基板，其中多个像素电极以对应于R（红色），G（绿色）和B（蓝色）的颜色的矩阵图案排列，相对基板，其中相对电极与像素电极相对放置，具有负介电各向异性的液晶材料，液晶材料位于矩阵基板和相对基板之间，其中提供具有垂直取向性的聚酰亚胺取向层和微透镜阵列具有多个微透镜，所述微透镜相对于像素电极的阵列以两个像素的间距提供。

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