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31. 发明授权

US07422807B2 Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：铌酸钾沉积体及其制造方法，压电薄膜谐振器，滤波器，振荡器，电子电路和电子设备
公开(公告)号：US07422807B2
公开(公告)日：2008-09-09
申请号：US11334711
申请日：2006-01-18
申请人： Takamitsu Higuchi , Taku Aoyama
发明人： Takamitsu Higuchi , Taku Aoyama
IPC分类号： H01L41/08 , H01L41/00 , H01R9/00 , B32B9/00
CPC分类号： H01L41/319 , C30B23/025 , C30B29/30 , G02F1/3551 , H01L41/0815 , H01L41/1873 , H01L41/316 , Y10T29/42
摘要： A method for manufacturing a potassium niobate deposited body includes: forming a buffer layer above a substrate composed of an R-plane sapphire substrate; forming above the buffer layer a potassium niobate layer or a potassium niobate solid solution layer that epitaxially grows in a (100) orientation in a pseudo cubic system expression; and forming an electrode layer above the potassium niobate layer or the potassium niobate solid solution layer, wherein a (100) plane of the potassium niobate layer or the potassium niobate solid solution layer is formed to tilt with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.
摘要翻译：制造铌酸钾沉积体的方法包括：在由R平面蓝宝石衬底构成的衬底上形成缓冲层; 在所述缓冲层上形成以假立方体系表达式以（100）取向外延生长的铌酸钾层或铌酸钾固溶体层; 在铌酸钾层或铌酸钾固溶体层上方形成电极层，其中形成铌酸钾铌酸盐或铌酸钾固溶体层的（100）面以[11-20]方向矢量倾斜为相对于R平面蓝宝石衬底的R平面（1-102）的旋转轴线。

32. 发明授权

US07279823B2 Piezoelectric actuator and liquid jet head 有权
标题翻译：压电致动器和液体喷头
公开(公告)号：US07279823B2
公开(公告)日：2007-10-09
申请号：US10492355
申请日：2003-05-15
申请人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
发明人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
IPC分类号： H01L41/08
CPC分类号： H01L41/0973 , B41J2/14233 , B41J2202/03 , H01L41/047 , H01L41/0478 , H01L41/0815 , H01L41/319
摘要： A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.
摘要翻译：提供了当使用（100）取向的钌酸锶作为底部电极时具有最佳层结构的压电致动器。该压电致动器包括由（100）取向氧化钇稳定的氧化锆，CeO 2 2或ZrO 2 2构成的隔膜30，其在（100）上外延生长，取向Si衬底20，形成在隔膜上并由（001）取向REBa 2 Cu 3 O x x构成的缓冲层41，底部形成在缓冲层上并由（100）取向钌酸锶构成的电极42，形成在底部电极上并由（100）取向PZT构成的压电层43和形成在压电层上的顶部电极44。

33. 发明授权

US07223305B2 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus 有权
标题翻译：铌酸钾单晶薄膜，表面声波元件，频率滤波器，频率振荡器，电路和电子设备的制造方法
公开(公告)号：US07223305B2
公开(公告)日：2007-05-29
申请号：US10761147
申请日：2004-01-20
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B29/30
CPC分类号： H03H9/02574 , C30B19/00 , C30B29/30 , H03H3/08
摘要： A method of manufacturing a potassium niobate (KNbO3) single crystal thin film, includes the steps of maintaining the substrate under a predetermined oxygen partial pressure; maintaining the substrate within a temperature region which is equal to or higher than an eutectic temperature of KNbO3 and 3K2O.Nb2O5 and is equal to or lower than complete melting temperature of KNbO3 and 3K2O.Nb2O5 so that a solid phase of KNbO3 and a liquid phase can coexist on the substrate; depositing a vapor phase material on the substrate in a state in which a solid phase and a liquid phase coexist; and precipitating KNbO3 on the substrate from the liquid phase as a solid phase to grow a KNbO3 single crystal thin film. The composition of a starting material to be vaporized to generate the vapor phase material is from K2O.Nb2O5=50:50 to K2O.Nb2O5=65:35.
摘要翻译：制备铌酸钾（KNbO 3）单晶薄膜的方法包括以下步骤：将衬底保持在预定的氧分压下; 将衬底保持在等于或高于KNbO 3和3K 2 N 2 O 2的共晶温度的温度区域内，并且等于或低于KNbO 3和3K 2 O的完全熔融温度.Nb 2 O 2，使得KNbO 3 3的固相和液相可以共存在基底上; 在固相和液相共存的状态下在基板上沉积气相材料; 并从液相中沉淀KNbO 3 N 3作为固相，以生长KNbO 3/3单晶薄膜。待蒸发以产生气相材料的起始材料的组成为K 2 N 2 O 2 O 5 = 50:50 至K 2 N 2 N 2 O 5 = 65:35。

34. 发明授权

US07033521B2 Piezoelectric actuator, ink jet head, and discharge apparatus 失效
标题翻译：压电致动器，喷墨头和放电装置
公开(公告)号：US07033521B2
公开(公告)日：2006-04-25
申请号：US10396115
申请日：2003-03-25
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/187 , H01I41/04 , B41J2/045 , B32B15/00
CPC分类号： B41J2/14233 , B41J2202/03 , H01L41/0478 , H01L41/0973 , H01L41/1871 , H01L41/318 , H01L41/319 , Y10T428/12493 , Y10T428/12611
摘要： A piezoelectric actuator includes: a buffer layer that is composed of an oxide or a nitride epitaxially formed on a Si substrate; a bottom electrode formed on the buffer layer, being composed of a transition metal oxide, and having a pseudo-cubic (100) or (111) orientation with a perovskite structure; a piezoelectric layer formed on the bottom electrode being composed of (Ba1−xMx)(Ti1−yZy)O3 (where (M=Sr or Ca and 0≦x≦0.3) (Z=Zr or Hf and 0≦y≦0.2)) with a pseudo-cubic (001) or (111) orientation; and a top electrode that is formed on the piezoelectric layer. In this way, a piezoelectric actuator that uses barium titanate as the piezoelectric body and does not include Pb is provided.
摘要翻译：压电致动器包括：由外延形成在Si衬底上的氧化物或氮化物构成的缓冲层; 形成在缓冲层上的底电极，由过渡金属氧化物构成，具有钙钛矿结构的假立方（100）或（111）取向; 形成在底部电极上的压电层由（Ba 1-x M x X）（Ti 1-y Z z）（其中（M = Sr或Ca，0 <= x <= 0.3）（Z = Zr或Hf，0 <= y <= 0.2）））（001）或（111）取向; 以及形成在压电层上的顶部电极。以这种方式，提供了使用钛酸钡作为压电体并且不包括Pb的压电致动器。

35. 发明授权

US06995634B2 Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor 失效
标题翻译：适用于电子电路和器件的表面声波元件及其制造方法
公开(公告)号：US06995634B2
公开(公告)日：2006-02-07
申请号：US10753237
申请日：2004-01-07
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H03H9/64 , H03B5/36
CPC分类号： H03H9/0542 , H03H9/02574 , H03H9/02984
摘要： A surface-acoustic-wave component that comprises a first piezoelectric layer composed of zinc oxide (ZnO), a second piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes (e.g., interdigital transducers) are further formed. Alternatively, it comprises a conductive layer composed of zinc oxide (ZnO), a piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes are further formed. The piezoelectric layer can actualize preferable orientation so as to improve the electromechanical coupling coefficient (K2). Thus, it is possible to produce surface-acoustic-wave components that contribute to manufacturing of highly-integrated electronic circuits such as frequency filters and oscillators as well as electronic devices such as portable telephones.
摘要翻译：一种表面声波分量，包括由氧化锌（ZnO）构成的第一压电层，由铌酸锂（LiNbO 3 N）组成的第二压电层和保护层，所述表面声波分量依次形成在硅衬底上，在其上进一步形成电极（例如，叉指式换能器）。或者，其包括由氧化锌（ZnO）构成的导电层，由铌酸锂（LiNbO 3 N）构成的压电层和保护层，其依次形成在硅基板上，进一步形成电极。压电层可以实现优选的取向，从而提高机电耦合系数（K 2 O 2）。因此，可以产生有助于制造诸如频率滤波器和振荡器的高度集成的电子电路以及诸如便携式电话的电子设备的表面声波分量。

36. 发明申请

US20050179342A1 Piezoelectric actuator and liquid jet head 有权
标题翻译：压电致动器和液体喷头
公开(公告)号：US20050179342A1
公开(公告)日：2005-08-18
申请号：US10492355
申请日：2003-05-15
申请人： Takamitsu Higuchi , Setsuya Iwashita
发明人： Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： B41J2/14 , H01L41/047 , H01L41/22 , H01L41/319 , H01L41/18
CPC分类号： H01L41/0973 , B41J2/14233 , B41J2202/03 , H01L41/047 , H01L41/0478 , H01L41/0815 , H01L41/319
摘要： A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.
摘要翻译：提供了当使用（100）取向的钌酸锶作为底部电极时具有最佳层结构的压电致动器。该压电致动器包括由（100）取向氧化钇稳定的氧化锆，CeO 2 2或ZrO 2 2构成的隔膜30，其在（100）上外延生长，取向Si衬底20，形成在隔膜上并由（001）取向REBa 2 Cu 3 O x x构成的缓冲层41，底部形成在缓冲层上并由（100）取向钌酸锶构成的电极42，形成在底部电极上并由（100）取向PZT构成的压电层43和形成在压电层上的顶部电极44。

37. 发明申请

US20050128681A1 Capacitor and its manufacturing method, and semiconductor device 失效
标题翻译：电容器及其制造方法以及半导体器件
公开(公告)号：US20050128681A1
公开(公告)日：2005-06-16
申请号：US11004591
申请日：2004-12-03
申请人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
发明人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
IPC分类号： H01L27/04 , H01G4/06 , H01L21/02 , H01L21/822
CPC分类号： H01L28/55
摘要： A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.
摘要翻译：提供一种电容器，其具有绝缘膜插入在第一电极和第二电极之间的结构。绝缘膜包括SrTiO 3 3主要成分，并添加至少一种Si和Ge。

38. 发明申请

US20050096230A1 Electronic device and electronic apparatus 审中-公开
标题翻译：电子设备和电子设备
公开(公告)号：US20050096230A1
公开(公告)日：2005-05-05
申请号：US11008761
申请日：2004-12-08
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01G2/00
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.
摘要翻译：通过在无机非晶层或有机固体层上沿期望的方向外延生长钙钛矿型氧化物薄膜，高度改善电子器件的性能; 此外，通过将电子器件结合到集成电路中提供高性能电子器件，其中在无机非晶层或有机固体层上形成氧化物薄层，并且钙钛矿型氧化物薄膜外延生长在氧化物薄层可以是氧化锶，氧化镁，氧化铈，氧化锆，钇稳定的氧化锆和钛酸锶中的至少一种; 作为钙钛矿型氧化物薄膜，例如使用作为压电体或铁电体材料的钙钛矿型氧化物薄膜。

39. 发明授权

US06849861B2 Electronic device and electronic apparatus 失效
公开(公告)号：US06849861B2
公开(公告)日：2005-02-01
申请号：US10108180
申请日：2002-03-27
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01L29/06
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

40. 发明授权

US06779878B2 Piezoelectronic actuator and liquid jetting head 失效
标题翻译：压电电子执行器和液体喷头
公开(公告)号：US06779878B2
公开(公告)日：2004-08-24
申请号：US10314418
申请日：2002-12-09
申请人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
发明人： Takamitsu Higuchi , Setsuya Iwashita , Koji Sumi , Masami Murai
IPC分类号： B41J2045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1628 , B41J2/1634 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2202/03 , H01L41/0477 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/318
摘要： The present invention provides an optimum layer structure for a piezoelectric actuator in which (100) orientation strontium ruthenate is used as a bottom electrode. The piezoelectric actuator comprises a Si substrate 20, a diaphragm 30 comprising (110) or (100) orientation strontium oxide which is formed thereon by way of epitaxial growth, a bottom electrode 42 comprising (100) orientation strontium ruthenate having a perovskite structure, a piezoelectric layer 43 comprising (100) orientation PZT, and a top electrode 44.
摘要翻译：本发明提供一种用于压电致动器的最佳层结构，其中（100）取向的钌酸锶用作底部电极。压电致动器包括Si衬底20，包括通过外延生长在其上形成的（110）或（100）取向氧化锶的隔膜30，包括具有钙钛矿结构的（100）取向钌酸锶的底部电极42，包括（100）取向PZT的压电层43和顶部电极44。

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