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    • 31. 发明授权
    • DA converter circuit provided with DA converter of segment switched capacitor type
    • DA转换电路配有片段开关电容型DA转换器
    • US07095350B2
    • 2006-08-22
    • US11157923
    • 2005-06-22
    • Hiroyuki HagiwaraHaruo KobayashiHao SanAtsushi Wada
    • Hiroyuki HagiwaraHaruo KobayashiHao SanAtsushi Wada
    • H03M1/66H03M3/00
    • H03M1/0665H03M1/806H03M3/43H03M3/464
    • A DA converter circuit is provided for use in a ΔΣ AD modulator. The DA converter circuit includes a DA converter of segment switched capacitor type. The DA converter includes an operational amplifier, capacitors as connected in parallel to each other to supply electric charges to the operational amplifier, an electrically charging switch for switching of electrically charging electric charges onto the respective capacitors or not, and an electrically discharging switch for switching or not electrically discharging electric charges from the respective capacitors or not. A switch device performs either one of the electrically charging, the electrically discharging, grounding, and polarity inversion onto the respective capacitors. A controller controls the electrically charging switch, the electrically discharging switch and the switch device to execute a process of second-order DWA algorithm for performing a second-order noise shaping of a non-linearity of the DA converter circuit.
    • 提供了用于DeltaSigma AD调制器的DA转换器电路。 DA转换器电路包括段转换电容器类型的DA转换器。 DA转换器包括运算放大器,彼此并联连接的电容器,以向运算放大器提供电荷,用于将充电电荷转换到各个电容器上的充电开关,以及用于切换的放电开关 或不从各个电容器中电荷放电。 开关装置对各个电容器进行充电,放电,接地和极性反转之一。 控制器控制充电开关,放电开关和开关装置,以执行用于执行DA转换器电路的非线性的二阶噪声整形的二阶DWA算法的处理。
    • 34. 发明授权
    • Non-volatile semiconductor memory device utilizing an oxidation
suppressing substance to prevent the formation of bird's breaks
    • 利用氧化抑制物质防止鸟喙形成的非挥发性半导体存储器件
    • US5847427A
    • 1998-12-08
    • US767084
    • 1996-12-16
    • Hiroyuki Hagiwara
    • Hiroyuki Hagiwara
    • H01L21/8247H01L27/105H01L29/423H01L29/792
    • H01L27/11526H01L27/105H01L27/11536H01L27/11543H01L29/42324
    • A non-volatile semiconductor memory device is provided that includes a semiconductor substrate having a first conductivity type, and diffusion regions having a second conductivity type formed in the surface of the semiconductor substrate at predetermined locations. A gate insulation film is formed on the semiconductor substrate, and a conductive floating gate is formed over the gate insulation film. Additionally, an interpoly insulation film is formed on the upper surface of the floating gate, and a conductive control gate is formed over the interpoly insulation film. Further, the upper surface of the floating gate and/or the upper surface of the interpoly insulation film contain an oxidization suppressing substance. The oxidization suppressing substance suppresses the reaction with the oxidizer during post oxidization, and thus prevents the formation of bird's beaks in the upper and/or lower portions of the interpoly insulation film. Thus, the deteriration of the write/erase characteristics of the memory cells is reduced, and variations in the write/erase characteristics of the memory cells are lessened. The present invention also provides a method of manufacturing such a non-volatile semiconductor memory device.
    • 提供了一种非易失性半导体存储器件,其包括具有第一导电类型的半导体衬底和在预定位置处形成在半导体衬底的表面中的具有第二导电类型的扩散区域。 在半导体衬底上形成栅极绝缘膜,并且在栅极绝缘膜上形成导电浮栅。 此外,在浮置栅极的上表面上形成互补绝缘膜,并且在多余绝缘膜上形成导电控制栅极。 此外,浮栅的上表面和/或多晶绝缘膜的上表面含有氧化抑制物质。 氧化抑制物质在后氧化时抑制与氧化剂的反应,从而防止在间隔绝缘膜的上部和/或下部形成鸟喙。 因此,减小了存储单元的写/擦除特性的阻碍,并且减小了存储单元的写/擦除特性的变化。 本发明还提供一种制造这种非易失性半导体存储器件的方法。
    • 39. 发明授权
    • Liquid ejecting head unit and liquid ejecting apparatus
    • 液体喷射头单元和液体喷射装置
    • US08616681B2
    • 2013-12-31
    • US13273147
    • 2011-10-13
    • Hiroyuki HagiwaraMasayuki Eguchi
    • Hiroyuki HagiwaraMasayuki Eguchi
    • B41J2/135B41J2/235B41J2/145B21D53/76
    • B41J25/001B41J2202/19Y10T29/49401
    • A recording head includes flange portions to which spacers are anchored on both sides of the recording head with a head case therebetween. Spacer attachment holes are provided in the flange portions in the center of the width direction orthogonal to a nozzle row in the recording head, and a round hole and an oblong hole relative to the spacers are provided in the flange portions in positions that are distanced from a center line in the width direction. Positioning holes for the flange portions are provided in the spacers in positions that correspond to the round hole and the oblong hole in the flange portions, and the spacers are anchored to the flange portions on both sides so as to be oriented symmetrically to each other, in a positioned state in which the positions of the positioning holes are aligned with the round hole and the oblong hole.
    • 记录头包括凸缘部分,间隔件被锚定在记录头的两侧并具有头部外壳。 在与记录头中的喷嘴列正交的宽度方向的中心的凸缘部分设置有间隔件连接孔,并且相对于间隔件的圆孔和长孔设置在凸缘部分中, 宽度方向的中心线。 用于凸缘部的定位孔设置在与凸缘部中的圆孔和长孔相对应的位置的间隔件中,并且间隔件相对于彼此对称地定位在两侧的凸缘部, 在定位状态下,定位孔的位置与圆孔和长孔对准。