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    • 36. 发明授权
    • Device for evaluating characteristic of insulated gate transistor
    • 绝缘栅晶体管特性评估装置
    • US06407573B1
    • 2002-06-18
    • US09238887
    • 1999-01-28
    • Kenji YamaguchiHiroyuki AmishiroYuko Maruyama
    • Kenji YamaguchiHiroyuki AmishiroYuko Maruyama
    • G01R3126
    • G01R31/2621H01L2924/0002H01L2924/00
    • A transistor having a longer channel length and serving as a reference, and a transistor having a shorter channel length and to be subjected to effective channel length extraction are prepared (step ST1.1). A hypothetical point at which a change in a total drain-to-source resistance is estimated to be approximately zero when a gate overdrive is slightly changed is extracted in a mask channel length versus total drain-to-source resistance plane. The values of a function (F) are calculated which are defined by the difference between the rate of change in the total drain-to-source resistance and the product of a channel resistance per unit length and the rate of change in a mask channel length at the hypothetical points (step ST1.6). A true threshold voltage of the transistor having the shorter channel length is determined by a shift amount (&dgr;) which minimizes the standard deviation of the function (F) determined in the step ST1.7 (step ST1.10). A resistance-based method thus extracts an effective channel length and a series resistance with increased accuracy.
    • 制备具有较长沟道长度并用作基准的晶体管,以及具有较短沟道长度并经受有效沟道长度提取的晶体管(步骤ST1.1)。 当栅极过驱动略微改变时,估计总漏极 - 源极电阻的变化大致为零的假想点,掩模沟道长度对总漏极 - 源极电阻平面提取。 计算函数(F)的值,其由总漏极 - 源极电阻的变化率与每单位长度的沟道电阻的乘积与掩模沟道长度的变化率之间的差定义 在假想点(步骤ST1.6)。 具有较短信道长度的晶体管的真实阈值电压由步骤ST1.7中确定的函数(F)的标准偏差最小化的移位量(delta)确定(步骤ST1.10)。 因此,基于电阻的方法提高了精确度的有效通道长度和串联电阻。