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31. 发明授权

US07291530B2 Semiconductor storage device and method of manufacturing the same 有权
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US07291530B2
公开(公告)日：2007-11-06
申请号：US11202032
申请日：2005-08-12
申请人： Takashi Nakagawa , Takashi Hase
发明人： Takashi Nakagawa , Takashi Hase
IPC分类号： H01L21/8234 , H01L21/00
CPC分类号： H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3 and a lower electrode and an upper electrode disposed so as to sandwich the dielectric layer therebetween; in the method are carried out forming, on a lower electrode conductive layer, using a MOCVD method, an initial nucleus containing at least one metallic element the same as a metallic element in the dielectric layer, forming, on the initial nucleus, using a MOCVD method, a buffer layer containing at least one metallic element the same as the metallic element contained in both the initial nucleus and the dielectric layer, in a higher content than the content of this metallic element contained in the initial nucleus, and forming, on the buffer layer, using a MOCVD method, the dielectric layer having a perovskite-type crystal structure.
摘要翻译：一种具有电容元件的半导体存储器件的制造方法，所述半导体存储器件具有具有由通式ABO 3 3表示的钙钛矿型晶体结构的电介质层，以及下电极和上电极，介电层; 在该方法中，使用MOCVD方法在下电极导电层上形成初始核，该初始核包含至少一个与电介质层中的金属元素相同的金属元素，在初始核上使用MOCVD 方法，包含与包含在初始核和电介质层中的金属元素相同的至少一种金属元素的缓冲层的含量高于初始核中包含的该金属元素的含量，并且在缓冲层，使用MOCVD法，电介质层具有钙钛矿型晶体结构。

32. 发明申请

US20070163675A1 Nb3Sn superconducting wire and precursor for the same 审中-公开
标题翻译： Nb3Sn超导线及前驱体相同
公开(公告)号：US20070163675A1
公开(公告)日：2007-07-19
申请号：US11593541
申请日：2006-11-07
申请人： Takashi Hase , Yukinobu Murakami , Hiroyuki Yasunaka , Takayoshi Miyazaki , Hiroyuki Kato , Kyoji Zaitsu
发明人： Takashi Hase , Yukinobu Murakami , Hiroyuki Yasunaka , Takayoshi Miyazaki , Hiroyuki Kato , Kyoji Zaitsu
IPC分类号： H01L39/24
CPC分类号： H01L39/2409
摘要： A precursor for manufacturing a Nb3Sn superconducting wire by bronze method, in which plural Nb or Nb-based alloy cores are buried in a Cu—Sn-based alloy base material. The Cu—Sn-based alloy base material comprises Ti and/or Zr in addition to Sn, and these components satisfy the equations (1) and (2) below: 0.4≦(X−15.6)/Y≦1.9 (1) and 15.6
摘要翻译：通过青铜法制造Nb 3 O 3 Sn超导线的前体，其中多个Nb或Nb基合金芯埋在Cu-Sn基合金基材中。除了Sn之外，Cu-Sn系合金基材还含有Ti和/或Zr，这些成分满足下述式（1）和（2）：＆lt;线内配方说明=“在线式” end =“lead”？> 0.4 <=（X-15.6）/ Y <= 1.9（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？>和<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“ 在线公式“end =”lead“？> 15.6 其中符号X表示内容的Sn质量％，符号Y表示Ti和Zr的质量％的总含量。

33. 发明申请

US20070069608A1 Thickness extensional piezoelectric resonator 有权
标题翻译：厚度拉伸压电谐振器
公开(公告)号：US20070069608A1
公开(公告)日：2007-03-29
申请号：US11605412
申请日：2006-11-29
申请人： Hiroaki Kaida , Hitoshi Sakaguchi , Takashi Hase , Jiro Inoue
发明人： Hiroaki Kaida , Hitoshi Sakaguchi , Takashi Hase , Jiro Inoue
IPC分类号： H01L41/00
CPC分类号： H03H9/177 , H03H9/02102
摘要： An energy-trapping-type thickness extensional piezoelectric resonator using a thickness extensional vibration mode having first and second resonance electrodes formed on portions of the top surface and the bottom surface of a piezoelectric substrate that is polarized in the thickness direction thereof, respectively, in which a portion where the first and second resonance electrodes oppose each other is formed as an energy-trapping-type vibration section, wherein, in order to suppress frequency changes of the thickness extensional vibration mode due to temperature, which is a main response using resonance characteristics, a suppression response having a frequency-temperature-change tendency for suppressing frequency changes of the main response due to temperature is brought into close proximity with the main response.
摘要翻译：一种使用厚度延伸振动模式的能量捕获型厚度延伸压电谐振器，其具有分别在其厚度方向上被偏振的压电基板的顶表面和底表面的部分上形成的第一和第二谐振电极，其中，第一和第二谐振电极彼此相对的部分形成为能量捕获型振动部分，其中为了抑制作为使用谐振特性的主要响应的温度引起的厚度延伸振动模式的频率变化具有用于抑制由于温度导致的主响应的频率变化的频率 - 温度变化趋势的抑制响应与主要响应紧密相关。

34. 发明申请

US20050287735A1 Semiconductor storage device and method of manufacturing the same 有权
公开(公告)号：US20050287735A1
公开(公告)日：2005-12-29
申请号：US11202032
申请日：2005-08-12
申请人： Takashi Nakagawa , Takashi Hase
发明人： Takashi Nakagawa , Takashi Hase
IPC分类号： C23C16/30 , H01L21/00 , H01L21/02 , H01L21/316 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L21/8246 , H01L27/105 , H01L29/76
CPC分类号： H01L28/55 , H01L28/65
摘要： A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3 and a lower electrode and an upper electrode disposed so as to sandwich the dielectric layer therebetween; in the method are carried out forming, on a lower electrode conductive layer, using a MOCVD method, an initial nucleus containing at least one metallic element the same as a metallic element in the dielectric layer, forming, on the initial nucleus, using a MOCVD method, a buffer layer containing at least one metallic element the same as the metallic element contained in both the initial nucleus and the dielectric layer, in a higher content than the content of this metallic element contained in the initial nucleus, and forming, on the buffer layer, using a MOCVD method, the dielectric layer having a perovskite-type crystal structure.

35. 发明授权

US06558463B2 Solution and method for forming a ferroelectric film 有权
标题翻译：用于形成铁电体膜的方法和方法
公开(公告)号：US06558463B2
公开(公告)日：2003-05-06
申请号：US09742825
申请日：2000-12-20
申请人： Takashi Hase , Yoichi Miyasaka , Toshinobu Shinnai , Hiroshi Morioka , Taku Yamate , Hayato Katsuragi , Kiyoto Mori
发明人： Takashi Hase , Yoichi Miyasaka , Toshinobu Shinnai , Hiroshi Morioka , Taku Yamate , Hayato Katsuragi , Kiyoto Mori
IPC分类号： C09D18300
CPC分类号： C23C18/1216
摘要： A solution for forming a ferroelectric film characterized in that it contains at least one member selected from the group consisting of modified silicone oil and fluorinated surfactants, and a method for forming a ferroelectric film wherein said solution is used. A uniform film free from uneven coating (striation) is formed.
摘要翻译：一种形成铁电体膜的方法，其特征在于，其含有选自改性硅油和氟化表面活性剂中的至少一种，以及形成所述溶液的铁电体膜的方法。形成不均匀涂布（条纹）的均匀膜。

36. 发明授权

US5839718A Long persistent phosphorescence phosphor 失效
标题翻译：长持续磷光体
公开(公告)号：US5839718A
公开(公告)日：1998-11-24
申请号：US898424
申请日：1997-07-22
申请人： Takashi Hase , Susumu Omatoi , Takao Ouchi
发明人： Takashi Hase , Susumu Omatoi , Takao Ouchi
IPC分类号： C09K11/02 , C09K11/77 , C09K11/59 , C09K11/06 , C09K11/66
CPC分类号： C09K11/7735 , C09K11/025 , C09K11/7734 , C09K11/7792 , C09K11/7793 , Y10T428/2991 , Y10T428/2998
摘要： A long persistent phosphorescence phosphor contains a europium-activated long persistent phosphorescence silicate phosphor of the formula (I), m(Sr.sub.1-a M.sup.1.sub.a)O.multidot.n(Mg.sub.1-b M.sup.2.sub.b)O.multidot.2(Si.sub.1-c Ge.sub.c)O.sub.2 :Eu.sub.x Ln.sub.y (I) containing at least one halogen atom in a specific amount, and an organic fluorescent pigment which is deposited on the surface of the europium-activated long persistent silicate phosphor.
摘要翻译：长持续性磷光体荧光体含有式（I）的铕活化长持久性磷光硅酸盐荧光体，含有至少一种（I）的m（Sr1-aM1a）Oxn（Mg1-bM2b）Ox2（Si1-cGec）O2：EuxLny 特定量的卤素原子和沉积在铕活化的长效硅酸盐荧光体的表面上的有机荧光颜料。

37. 发明授权

US5156764A Phosphor 失效
标题翻译：磷
公开(公告)号：US5156764A
公开(公告)日：1992-10-20
申请号：US746100
申请日：1991-08-12
申请人： Hideaki Kaneda , Yuji Takatuka, deceased , Takashi Hase
发明人： Hideaki Kaneda , Yuji Takatuka, deceased , Takashi Hase
IPC分类号： C09K11/77 , C09K11/81
CPC分类号： C09K11/7795 , C09K11/7777 , C09K11/7778 , C09K11/7796
摘要： A trivalent metal phosphate phosphor having a composition of the formula:(Ln.sub.1-x Ln'.sub.x).sub.3 PO.sub.7 (I)wherein Ln is at least one member selected from the group consisting of yttrium, lanthanum, gadolinium and lutetium, Ln' is at least one member selected from the group consisting of terbium, cerium, europium, praseodymium, samarium, dysprosium, erbium, thulium and holmium, and x is a number satisfying 0.0001.ltoreq.x.ltoreq.0.5.
摘要翻译：具有式（Ln1-xLn'x）3PO7（I）的组成的三价金属磷酸盐荧光体，其中Ln为选自钇，镧，钆和镥中的至少一种，Ln'为至少一种选自铽，铈，铕，镨，钐，镝，铒，ium和钬的元素，x是满足0.0001≤x≤0.5的数。

38. 发明授权

US5032316A Fluorescent composition 失效
标题翻译：荧光成分
公开(公告)号：US5032316A
公开(公告)日：1991-07-16
申请号：US259526
申请日：1988-10-18
申请人： Fumio Takahashi , Kunihiko Yoneshima , Takashi Hase
发明人： Fumio Takahashi , Kunihiko Yoneshima , Takashi Hase
IPC分类号： C09K11/08 , C09K11/02 , C09K11/56 , H01J31/15
CPC分类号： C09K11/565 , C09K11/025
摘要： A fluorescent composition composed of a mixture of a sulfide phosphor and a conductive material, the sulfide phosphor consisting essentially of a sulfide of the formula (Zn.sub.1-x, Cd.sub.x)S wherein x is a number satisfying a condition of 0.ltoreq.x.ltoreq.1, as host material, and zinc oxide (ZnO) or a compound capable of being converted to zinc oxide (ZnO) by heat treatment and alumina, adhered to the surface of the host material.
摘要翻译：由硫化物荧光体和导电材料的混合物组成的荧光组合物，所述硫化物荧光体基本上由式（Zn1-x，Cdx）S的硫化物组成，其中x是满足条件0 < / = 1，作为主体材料，氧化锌（ZnO）或能够通过热处理转化为氧化锌（ZnO）的化合物和氧化铝粘附到主体材料的表面。

39. 发明授权

US4064066A Phosphors for infrared-to-visible conversion 失效
标题翻译：用于红外至可见转换的荧光粉
公开(公告)号：US4064066A
公开(公告)日：1977-12-20
申请号：US719693
申请日：1976-09-02
申请人： Akio Toshinai , Takashi Hase
发明人： Akio Toshinai , Takashi Hase
IPC分类号： C09K11/77 , C09K11/85 , C09K11/46
CPC分类号： C09K11/7772
摘要： A phosphor for infrared-to-visible conversion comprising a complex rare earth fluoride as a main ingredient and zinc fluoride having a general composition expressed by one of the following formulas:(Y.sub.1-x-y Yb.sub.x A.sub.y) F.sub.3.sup.. .alpha.ZnF.sub.2(la.sub.1-x-y Yb.sub.x A.sub.y) F.sub.3.sup.. .alpha.ZnF.sub.2 and (Lu.sub.1-x-y Yb.sub.x A.sub.y) F.sub.3.sup.. .alpha.ZnF.sub.2wherein x is in the range of from 0.05 to 0.5, y is in the range of from 0.002 to 0.09 when yttrium fluoride is the host material and from 0.001 to 0.1 when lanthanum or lutetium fluoride is the host material, .alpha. is in the range of from 1.6 .times. 10.sup.-4 to 1.6 .times. 10.sup.-3 grams with respect to 1 gram of the phosphor and A is at least one member selected from Er and Ho.
摘要翻译：一种用于红外至可见转化的磷光体，其包含复合稀土氟化物作为主要成分，并具有由下式表示的一般组成的氟化锌：

40. 发明授权

US09254493B2 Oxygen-enriched air producing device and oxygen-enriched air producing method 有权
标题翻译：富氧空气生产装置和富氧空气生产方法
公开(公告)号：US09254493B2
公开(公告)日：2016-02-09
申请号：US14003700
申请日：2012-05-08
申请人： Kenichi Inoue , Takashi Hase , Shingo Kasai
发明人： Kenichi Inoue , Takashi Hase , Shingo Kasai
IPC分类号： B03C1/00 , B01D53/22 , B01D57/02 , C01B13/02
CPC分类号： B03C1/00 , B01D53/22 , B01D57/02 , C01B13/0248
摘要： The invention is characterized in: forming a magnetic field inside a flow channel tube, the tube wall of which is formed from a material that is nonmagnetic and which, when the pressure outside the flow channel tube is lower than the pressure inside the flow channel tube, passes a portion of the air flowing inside the tube through the tube wall and discharges same to the outside thereof; supplying air to the flow channel tube so that at least a region of laminar flow is formed inside the flow channel tube; and reducing the pressure outside the flow channel tube to a prescribed pressure.
摘要翻译：本发明的特征在于：在流道管内形成磁场，其管壁由非磁性的材料形成，当流道管外部的压力低于流道管内的压力时使流过管内的空气的一部分通过管壁，并将其排出到其外部; 向所述流路管供给空气，使得在所述流路管内形成至少一层层流区域; 并将流道管外的压力降低到规定的压力。

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