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31. 发明申请

US20070171392A1 WAVELENGTH SELECTING METHOD, POSITION DETECTING METHOD AND APPARATUS, EXPOSURE METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD 失效
标题翻译：波长选择方法，位置检测方法和装置，曝光方法和装置以及装置制造方法
公开(公告)号：US20070171392A1
公开(公告)日：2007-07-26
申请号：US11695705
申请日：2007-04-03
申请人： Takahiro Matsumoto
发明人： Takahiro Matsumoto
IPC分类号： G03B27/32
CPC分类号： G03F9/7065 , G03B27/52 , G03F9/7011
摘要： A wavelength selecting method for selecting a wavelength of light, the light being used to detect a position of a target with a signal from an image of an alignment mark covered with resist, includes the steps of obtaining a reflectance of the resist at a position outside the alignment mark by irradiating lights having plural wavelengths to the resist at the position, and selecting one of the lights which one has a wavelength that provides the maximum value of reflectance among the reflectances measured by the measuring step or which one has a wavelength that falls within a predetermined wave range centering on the wavelength that provide the maximum reflectance.
摘要翻译：一种用于选择光的波长选择方法，用于利用由抗蚀剂覆盖的对准标记的图像的信号来检测目标的位置的光包括以下步骤：获得外部位置处的抗蚀剂的反射率该对准标记通过向该位置处的抗蚀剂照射具有多个波长的光，并且选择一个具有提供测量步骤测量的反射率中的最大反射率值的波长的光或者具有下降波长的光在以提供最大反射率的波长为中心的预定波段内。

32. 发明授权

US07190455B2 Alignment method and apparatus and exposure apparatus 有权
标题翻译：对准方法及装置及曝光装置
公开(公告)号：US07190455B2
公开(公告)日：2007-03-13
申请号：US10762599
申请日：2004-01-21
申请人： Takahiro Matsumoto
发明人： Takahiro Matsumoto
IPC分类号： G01B11/00 , G06F17/50
CPC分类号： G03F9/7046
摘要： A method for detecting disposition of plurality of exposure shot areas of an object that is to be exposed includes a first detection step of detecting the alignment marks on the object, an evaluation step of evaluating randomness of the alignment marks based on the detection result by the first detection step, a determination step of determining a number smaller than the total number of alignment marks on the object based on the evaluation result by the evaluation step, and a second detection step of detecting the disposition of the plurality of exposure shot areas by detecting alignment marks corresponding to the number determined by the determination step.
摘要翻译：一种用于检测要曝光的对象的多个曝光拍摄区域的配置的方法包括：检测对象上的对准标记的第一检测步骤;基于检测结果的对准标记的随机性的评估步骤; 第一检测步骤，基于评估步骤的评估结果确定小于对象上的对齐标记总数的数字的确定步骤;以及第二检测步骤，通过检测多个曝光拍摄区域的配置来检测对应于由确定步骤确定的数量的对准标记。

33. 发明授权

US07062010B2 Method for adjusting gap between two objects and exposure method using the same, gap adjusting apparatus, and exposure apparatus 失效
标题翻译：用于调整两个物体之间的间隙的方法和使用其的曝光方法，间隙调节装置和曝光装置
公开(公告)号：US07062010B2
公开(公告)日：2006-06-13
申请号：US10183332
申请日：2002-06-25
申请人： Takahiro Matsumoto
发明人： Takahiro Matsumoto
IPC分类号： G21K5/00
CPC分类号： G03F9/703 , G03F1/22 , G03F1/42 , G03F7/7035 , G03F9/7038 , G03F9/7049 , G03F9/7088
摘要： There is provided a method of making a gap between first and second objects have a predetermined value. The method includes steps of introducing light to an entry window on the first object, detecting an intensity of light from an exit window on the first object, the exit window being at such a position that light would enter through the entry window of the first object, reflect on the second object, and then enter the exit window of the first object if the gap has the predetermined value, and positioning the second object, with respect to a direction concerning the gap, based on an intensity of light detected in the detecting step.
摘要翻译：提供了使第一和第二物体之间的间隙具有预定值的方法。该方法包括以下步骤：将光引入第一物体上的入口窗口，检测来自第一物体上的出口窗口的光强度，出射窗口处于这样的位置，即光将通过第一物体的入口窗口进入反映在第二物体上，然后如果间隙具有预定值，则进入第一物体的出射窗口，并且基于在检测中检测到的光的强度相对于关于间隙的方向定位第二物体步。

34. 发明申请

US20060050274A1 Management system, apparatus, and method, exposure apparatus, and control method therefor 有权
标题翻译：管理系统，装置和方法，曝光装置及其控制方法
公开(公告)号：US20060050274A1
公开(公告)日：2006-03-09
申请号：US11218538
申请日：2005-09-06
申请人： Takahiro Matsumoto , Hideki Ina , Takehiko Suzuki , Koichi Sentoku , Satoru Oishi
发明人： Takahiro Matsumoto , Hideki Ina , Takehiko Suzuki , Koichi Sentoku , Satoru Oishi
IPC分类号： G01B11/00
CPC分类号： G03F9/7092 , G03F7/70633
摘要： An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.
摘要翻译：曝光装置通过使用形成在晶片上的预定取样组进行AGA测量，并且确定对准参数。曝光装置通过使用对准参数来执行晶片对准处理和曝光处理。曝光装置向中央处理单元通知AGA测量结果和对准参数。覆盖检查装置测量曝光的晶片上的实际曝光位置，并向中央处理单元通知测量结果。中央处理单元根据AGA测量结果，对准参数和实际测量的曝光位置优化对准处理。

35. 发明授权

US06992767B2 Management system, apparatus, and method, exposure apparatus, and control method therefor 失效
标题翻译：管理系统，装置和方法，曝光装置及其控制方法
公开(公告)号：US06992767B2
公开(公告)日：2006-01-31
申请号：US10423889
申请日：2003-04-28
申请人： Takahiro Matsumoto , Hideki Ina , Takehiko Suzuki , Koichi Sentoku , Satoru Oishi
发明人： Takahiro Matsumoto , Hideki Ina , Takehiko Suzuki , Koichi Sentoku , Satoru Oishi
IPC分类号： G01B11/00 , G06F19/00
CPC分类号： G03F9/7092 , G03F7/70633
摘要： An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit (4) of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit (4) optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.
摘要翻译：曝光装置通过使用形成在晶片上的预定取样组进行AGA测量，并且确定对准参数。曝光装置通过使用对准参数来执行晶片对准处理和曝光处理。曝光装置向中央处理单元（4）通知AGA测量结果和对准参数。覆盖检查装置测量曝光的晶片上的实际曝光位置，并向中央处理单元通知测量结果。中央处理单元（4）基于AGA测量结果，对准参数和实际测量的曝光位置来优化对准处理。

36. 发明申请

US20050259257A1 Position detecting device and position detecting method 有权
标题翻译：位置检测装置和位置检测方法
公开(公告)号：US20050259257A1
公开(公告)日：2005-11-24
申请号：US11190168
申请日：2005-07-27
申请人： Takahiro Matsumoto , Hideki Ina
发明人： Takahiro Matsumoto , Hideki Ina
IPC分类号： G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/68
CPC分类号： G03F9/7088 , G03F7/70633 , G03F9/7003 , G03F9/7046 , G03F9/7065 , G03F9/7069 , G03F9/7092
摘要： A position detection method for detecting the position of marks comprises the following steps: a step for detecting first information relating to the position of the mark by detecting light from the mark under first measurement conditions; a step for detecting second information relating to the position of the mark by detecting light from the mark under second measurement conditions which differ from the first measurement conditions; and a step for detecting the position of the mark based on the first and second information, thereby providing a high-precision position detecting method and device serving as an alignment or overlaying detection device in an exposure apparatuses used in manufacturing semiconductor devices, wherein position detection precision is not lost even in the event that the alignment marks are not symmetrical or there are irregularities in the non-symmetry of multiple alignment marks within the same wafer.
摘要翻译：用于检测标记位置的位置检测方法包括以下步骤：通过在第一测量条件下检测来自标记的光来检测与标记的位置有关的第一信息的步骤; 通过在与第一测量条件不同的第二测量条件下检测来自标记的光来检测与标记的位置有关的第二信息的步骤; 以及基于第一和第二信息来检测标记的位置的步骤，从而在用于制造半导体器件的曝光装置中提供用于对准或重叠检测装置的高精度位置检测方法和装置，其中位置检测即使在对准标记不对称或在同一晶片内的多个对准标记的非对称性中存在不规则性的情况下，精度也不会降低。

37. 发明授权

US06605392B2 X-ray mask structure, and X-ray exposure method and apparatus using the same 失效
标题翻译： X射线掩模结构和X射线曝光方法及使用其的装置
公开(公告)号：US06605392B2
公开(公告)日：2003-08-12
申请号：US09335494
申请日：1999-06-18
申请人： Takahiro Matsumoto , Keiko Chiba
发明人： Takahiro Matsumoto , Keiko Chiba
IPC分类号： G03F900
CPC分类号： G03F1/22 , G03F1/62 , G03F1/64 , G03F7/70983
摘要： An X-ray mask structure for use in X-ray lithography includes an X-ray transmission film to be disposed opposed to a workpiece in X-ray exposure, the X-ray transmission film having an X-ray absorptive material corresponding to a pattern to be printed on the workpiece, and a thin film covering at least a portion of the X-ray transmission film, the thin film having an anti-reflection function with respect to alignment light to be projected to the thin film for direct or indirect detection of relative positional deviation between the mask structure and the workpiece.
摘要翻译：用于X射线光刻的X射线掩模结构包括在X射线曝光中与工件相对设置的X射线透射膜，X射线透射膜具有对应于图案的X射线吸收材料被印刷在工件上，薄膜覆盖至少一部分X射线透射膜，薄膜具有相对于对准光的抗反射功能，以投射到薄膜上用于直接或间接检测掩模结构和工件之间的相对位置偏差。

38. 发明授权

US06372308B1 Liquid crystal composition 失效
标题翻译：液晶组成
公开(公告)号：US06372308B1
公开(公告)日：2002-04-16
申请号：US09521956
申请日：2000-03-09
申请人： Yasue Yoshioka , Masahiro Johno , Tomoyuki Yui , Takahiro Matsumoto
发明人： Yasue Yoshioka , Masahiro Johno , Tomoyuki Yui , Takahiro Matsumoto
IPC分类号： C09K1912
CPC分类号： C09K19/0266 , C09K19/2021 , Y10T428/10
摘要： A liquid crystal composition includes (1) an anti-ferroelectric liquid crystal compound of formula (1) and (2) a ferrielectric liquid crystal compound or racemic compound thereof. The composition ratio of (1) to (2) is in the range extending from a value which extends from within 5 mol % of the boundary compositional ratio on the anti-ferroelectric phase side and to within 25 mol % of the boundary compositional ratio on the ferrielectric phase side. The boundary compositional ratio is obtained on the basis of a liquid crystal phase diagram prepared on the basis of conoscopic image observations obtained by changing the mixing ratio of (1) and (2). The liquid crystal composition has the following properties: (b) an optical response in a positive voltage region and a negative voltage region and free or substantially free of hysteresis; and (c) excellent alignment stability. The liquid crystal composition is substantially free from sticking, is excellent in alignment and alignment stability and exhibits a V-letter-shaped optical response so that it can be used in a highly reliable active matrix liquid crystal display device.
摘要翻译：液晶组合物包括（1）式（1）的反铁电液晶化合物和（2）电介质液晶化合物或其外消旋化合物。（1）〜（2）的组成比在从反铁电相侧的边界成分比例的5摩尔％以内的值延伸到边界成分比的25摩尔％以下的范围内电介质相侧。基于通过改变（1）和（2）的混合比获得的虹膜图像观察准备的液晶相图获得边界组成比。液晶组合物具有以下性质：（b）在正电压区域和负电压区域中的光学响应，并且具有自由或基本上没有迟滞; 和（c）极好的取向稳定性。液晶组合物基本上没有粘附，对准和取向稳定性优异，呈V字形的光学响应，因此可用于高可靠性的有源矩阵液晶显示装置。

39. 发明授权

US06151120A Exposure apparatus and method 有权
标题翻译：曝光装置和方法
公开(公告)号：US06151120A
公开(公告)日：2000-11-21
申请号：US198443
申请日：1998-11-24
申请人： Takahiro Matsumoto , Hideki Ina
发明人： Takahiro Matsumoto , Hideki Ina
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F9/7084 , G03F9/7049
摘要： In this exposure apparatus, a wafer formed with a first alignment mark and a mask formed with a second alignment mark at a position outside the exposure field angle are aligned. The exposure apparatus includes an alignment detection system for optically detecting any positional deviation between the first and second alignment marks, a calculator for calculating any positional deviation between a first pattern formed on the wafer and a second pattern formed on the mask on the basis of the detection result of the alignment detection system, the position of the first alignment mark in the wafer, and the position of the second alignment mark in the mask, and an actuator for driving a wafer stage on the basis of the calculation result of the calculator to make the first and second patterns overlap each other.
摘要翻译：在该曝光装置中，对准具有第一对准标记的晶片和在曝光视场角外的位置处形成有第二对准标记的掩模。曝光装置包括用于光学检测第一和第二对准标记之间的任何位置偏差的对准检测系统，用于计算形成在晶片上的第一图案与形成在掩模上的第二图案之间的任何位置偏差的计算器，对准检测系统的检测结果，晶片中的第一对准标记的位置和掩模中的第二对准标记的位置，以及基于计算器的计算结果驱动晶片台的致动器使第一和第二模式彼此重叠。

40. 发明授权

US5938973A Swallow-tailed compound and ferrielectric liquid crystal composition containing the same 失效
标题翻译：燕尾化合物和含有它的电致液晶组合物
公开(公告)号：US5938973A
公开(公告)日：1999-08-17
申请号：US927795
申请日：1997-09-11
申请人： Yuki Motoyama , Tomoyuki Yui , Masahiro Johno , Takahiro Matsumoto
发明人： Yuki Motoyama , Tomoyuki Yui , Masahiro Johno , Takahiro Matsumoto
IPC分类号： G02F1/13 , C07C69/86 , C07C69/90 , C09K19/02 , C09K19/06 , C09K19/20 , C09K19/46 , C09K19/12 , C07C69/76
CPC分类号： C09K19/2021 , C07C69/90 , C09K19/02 , C09K19/06
摘要： A swallow-tailed compound of the following general formula (1), ##STR1## wherein m is an integer of 4 to 10, n is an integer of 2 to 6, p is 0 or 1 and each of X and Y is independently a hydrogen or fluorine atom; and a ferrielectric liquid crystal composition consisting essentially of the swallow-tailed compound of the general formula (1) and a ferrielectric liquid crystal compound of the following general formula (2), ##STR2## wherein R is a linear alkyl group having 6 to 12 carbon atoms, Z is a hydrogen or fluorine atom, r is an integer of 2 to 4 and s is an integer of 2 to 4. The ferrielectric liquid crystal composition has a ferrielectric phase in a broad temperature range and attains a fast response and a large tilt angle in a broad temperature range so that a ferrielectric liquid crystal display device having high display qualities can be provided.
摘要翻译：下述通式（1）的燕尾化合物，其中m为4〜10的整数，n为2〜6的整数，p为0或1，X和Y各自独立地为氢或氟原子; 和基本上由通式（1）的燕尾化合物和以下通式（2）的电介质液晶化合物组成的电介质液晶组合物，其中R是具有6至12个碳原子的直链烷基， Z为氢或氟原子，r为2〜4的整数，s为2〜4的整数。电介质液晶组合物具有宽温度范围内的电介质相，具有快速响应和大倾角在宽的温度范围内，可以提供具有高显示质量的电介质液晶显示装置。

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