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31. 发明授权

US06858454B1 Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor device 有权
标题翻译：用于测量半导体构成元件含量的方法和用于制造半导体器件的方法
公开(公告)号：US06858454B1
公开(公告)日：2005-02-22
申请号：US10674523
申请日：2003-10-01
申请人： Yoshihiko Kanzawa , Tohru Saitoh , Takeshi Takagi , Katsuya Nozawa
发明人： Yoshihiko Kanzawa , Tohru Saitoh , Takeshi Takagi , Katsuya Nozawa
IPC分类号： G01N21/21 , G01N21/35 , H01L21/66
CPC分类号： G01N21/3563 , G01N21/211
摘要： A method for measuring semiconductor constituent element content utilizes the steps of: obtaining a film thickness of an SiGeC layer formed on a semiconductor substrate by evaluation using spectroscopic ellipsometry; measuring infrared absorption spectrum of the SiGeC layer; and obtaining a C content of the SiGeC layer based on the film thickness and the infrared absorption spectrum of the SiGeC layer. The method: obtaining an apparent Ge content of the SiGeC layer by evaluation using spectroscopic ellipsometry; and obtaining an actual Ge content of the SiGeC layer based on the apparent Ge content and the C content. The constituent element content of the SiGeC layer can be easily and accurately measured according to the above-mentioned method.
摘要翻译：一种测量半导体构成元件含量的方法采用以下步骤：通过使用分光椭圆偏光度法评估在半导体衬底上形成的SiGeC层的膜厚度; 测量SiGeC层的红外吸收光谱; 并根据SiGeC层的膜厚和红外吸收光谱获得SiGeC层的C含量。该方法：通过使用分光椭偏仪评估获得SiGeC层的表观Ge含量; 并且基于表观Ge含量和C含量获得SiGeC层的实际Ge含量。根据上述方法可以容易且精确地测量SiGeC层的构成元素含量。

32. 发明授权

US06403976B1 Semiconductor crystal, fabrication method thereof, and semiconductor device 失效
标题翻译：半导体晶体及其制造方法以及半导体器件
公开(公告)号：US06403976B1
公开(公告)日：2002-06-11
申请号：US09482077
申请日：2000-01-13
申请人： Tohru Saitoh , Yoshihiko Kanzawa , Koji Katayama , Katsuya Nozawa , Gaku Sugahara , Minoru Kubo
发明人： Tohru Saitoh , Yoshihiko Kanzawa , Koji Katayama , Katsuya Nozawa , Gaku Sugahara , Minoru Kubo
IPC分类号： H01L2906
CPC分类号： H01L29/165 , C30B23/02 , C30B29/68 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02507 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/1054 , H01L29/155
摘要： A Si1−xGex/Si1−yCy short-period superlattice which functions as a single SiGeC layer is formed by alternately growing Si1−xGex layers (0
摘要翻译：通过交替生长Si1-xGex层（0

33. 发明授权

US6087725A Low barrier ohmic contact for semiconductor light emitting device 失效
标题翻译：半导体发光器件的低阻挡欧姆接触
公开(公告)号：US6087725A
公开(公告)日：2000-07-11
申请号：US161498
申请日：1998-09-28
申请人： Shigeo Yoshii , Yoichi Sasai , Satoshi Kamiyama , Tohru Saitoh , Takashi Nishikawa , Ryoko Miyanaga
发明人： Shigeo Yoshii , Yoichi Sasai , Satoshi Kamiyama , Tohru Saitoh , Takashi Nishikawa , Ryoko Miyanaga
IPC分类号： H01L33/28 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/28
摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.
摘要翻译：在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层的p型ZnS0.5Te0.5和第五层p型ZnTe。

34. 发明授权

US06838395B1 Method for fabricating a semiconductor crystal 失效
标题翻译：半导体晶体的制造方法
公开(公告)号：US06838395B1
公开(公告)日：2005-01-04
申请号：US10330080
申请日：2002-12-30
申请人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
发明人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
IPC分类号： C30B1/00 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/205 , H01L21/31 , H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/322 , Y10S438/933
摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.
摘要翻译：一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

35. 发明授权

US06660393B2 SiGeC semiconductor crystals and the method producing the same 有权
标题翻译： SiGeC半导体晶体及其制造方法
公开(公告)号：US06660393B2
公开(公告)日：2003-12-09
申请号：US10383743
申请日：2003-03-10
申请人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
发明人： Tohru Saitoh , Yoshihiko Kanzawa , Katsuya Nozawa , Minoru Kubo
IPC分类号： C30B2934
CPC分类号： H01L29/161 , C30B25/02 , C30B29/52 , H01L21/02447 , H01L21/0245 , H01L21/02507 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , Y10T428/12674 , Y10T428/265
摘要： A B-doped Si1−x−yGexCy layer 102 (where 0
摘要翻译：使用UHV-CVD工艺在Si衬底101上外延生长B掺杂的Si1-x-yGexCy层102（其中0

36. 发明授权

US06620665B1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06620665B1
公开(公告)日：2003-09-16
申请号：US09787108
申请日：2001-03-14
申请人： Gaku Sugahara , Tohru Saitoh , Minoru Kubo , Teruhito Ohnishi
发明人： Gaku Sugahara , Tohru Saitoh , Minoru Kubo , Teruhito Ohnishi
IPC分类号： H01L21338
CPC分类号： H01L29/66916 , H01L21/02164 , H01L21/02271 , H01L21/02381 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/28512 , H01L21/28525 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/823807 , H01L29/66242
摘要： A process control is performed for fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a device, for example, including no Ge-containing semiconductor film on a common fabrication line. When the wafer including the Ge-containing semiconductor film is to be subjected to high-temperature treatment at 700° C. or more in the state of the Ge-containing semiconductor film being substantially exposed, the Ge-containing semiconductor film is covered with a cap layer made of Si or the like before the high-temperature treatment. The cap layer may be formed on the common fabrication line. However, if the formation of the cap layer itself involves high temperature of 700° C. or more, it is performed on a fabrication line separate from the common fabrication line. Alternatively, the cap layer may be formed on a fabrication line separate from the common fabrication line and the high-temperature treatment at 700° C. or more may also be performed on a separate fabrication line. Otherwise, it suffices to only perform the high-temperature treatment at 700° C. or more on a separate line.
摘要翻译：执行用于制造包括含Ge半导体膜和用于器件的晶片的器件的晶片的工艺控制，例如在公共制造线上不包含含Ge半导体膜。在含有Ge的半导体膜的晶片在Ge基半导体膜的状态基本上露出的状态下，在700℃以上进行高温处理时，含有Ge的半导体膜被覆盖在高温处理之前由Si等制成的盖层。盖层可以形成在公共制造线上。然而，如果盖层本身的形成涉及700℃以上的高温，则在与公共制造线分开的制造线上进行。或者，盖层可以形成在与公共制造线分开的制造线上，并且在700℃以上的高温处理也可以在单独的制造线上进行。否则，仅在单独的线路上进行700℃以上的高温处理即可。

37. 发明授权

US06455364B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06455364B1
公开(公告)日：2002-09-24
申请号：US09526686
申请日：2000-03-15
申请人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
发明人： Akira Asai , Teruhito Oonishi , Takeshi Takagi , Tohru Saitoh , Yoshihiro Hara , Koichiro Yuki , Katsuya Nozawa , Yoshihiko Kanzawa , Koji Katayama , Yo Ichikawa
IPC分类号： H01L218249
CPC分类号： H01L29/66242 , H01L21/763 , H01L21/8249 , H01L27/0623 , H01L29/7378
摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.
摘要翻译：在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

38. 发明授权

US06169296A Light-emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US06169296A
公开(公告)日：2001-01-02
申请号：US09176906
申请日：1998-10-22
申请人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
发明人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/145 , H01L33/38 , H01L33/42
摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.
摘要翻译：本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。有源层形成在n型半导体衬底上。接触层形成在有源层上。肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

39. 发明授权

US06987072B2 Method of producing semiconductor crystal 失效
标题翻译：半导体晶体的制造方法
公开(公告)号：US06987072B2
公开(公告)日：2006-01-17
申请号：US11009020
申请日：2004-12-13
申请人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
发明人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
IPC分类号： H01L21/31
CPC分类号： H01L21/324 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/322 , Y10S438/933
摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.
摘要翻译：一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

40. 发明授权

US06847062B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06847062B2
公开(公告)日：2005-01-25
申请号：US10413305
申请日：2003-04-15
申请人： Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh
发明人： Teruhito Ohnishi , Koichiro Yuki , Shigeki Sawada , Keiichiro Shimizu , Koichi Hasegawa , Tohru Saitoh
IPC分类号： H01L21/331 , H01L29/737 , H01L31/0328 , H01L29/00
CPC分类号： H01L29/66242 , H01L29/7378
摘要： In a semiconductor device functioning as a SiGeC-HBT, an emitter/base stacked portion 20 is formed on a Si epitaxially grown layer 2. The emitter/base stacked portion 20 includes: a SiGeC spacer layer 21; a SiGeC core base layer 22 containing boron at a high concentration, a SiGe cap layer 23; a Si cap layer 24, and an emitter layer 25 formed by introducing phosphorus into the Si cap layer 24 and the SiGe cap layer 23.
摘要翻译：在用作SiGeC-HBT的半导体器件中，在Si外延生长层2上形成发射极/基极层叠部分20.发射极/基极层叠部分20包括：SiGeC间隔层21; 含有高浓度硼的SiGeC芯基层22，SiGe覆盖层23; Si覆盖层24和通过将磷引入Si覆盖层24和SiGe覆盖层23而形成的发射极层25。

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