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31. 发明授权

US07369376B2 Amorphous layers in a magnetic tunnel junction device 失效
标题翻译：磁性隧道结装置中的非晶层
公开(公告)号：US07369376B2
公开(公告)日：2008-05-06
申请号：US11080867
申请日：2005-03-15
申请人： Yimin Guo , Tai Min , Po-Kang Wang
发明人： Yimin Guo , Tai Min , Po-Kang Wang
IPC分类号： G11B5/39
CPC分类号： G11C11/15
摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
摘要翻译：公开了一种改进的TMR装置。器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。用于接触电介质层的优选材料是CoFeB。公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

32. 发明申请

US20070184561A1 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US20070184561A1
公开(公告)日：2007-08-09
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

33. 发明申请

US20070164380A1 MRAM with split read-write cell structures 失效
标题翻译：具有分割读写单元结构的MRAM
公开(公告)号：US20070164380A1
公开(公告)日：2007-07-19
申请号：US11331998
申请日：2006-01-13
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L43/00
CPC分类号： H01L27/228
摘要： An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part
摘要翻译： MRAM单元分成两部分形成。使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。第二部分包括其上写入和存储信息的第二自由层部分。第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置

34. 发明授权

US07242046B2 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling 失效
标题翻译：磁性随机存取存储器设计采用静磁耦合控制磁切换机构
公开(公告)号：US07242046B2
公开(公告)日：2007-07-10
申请号：US11167852
申请日：2005-06-27
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/308 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.
摘要翻译：形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。结果，本发明的多分段电池由于不规则性而不会因结构缺陷而变化。

35. 发明授权

US07029941B2 Magnetic random access memory designs with controlled magnetic switching mechanism 失效
标题翻译：磁性随机存取存储器设计采用受控磁切换机制
公开(公告)号：US07029941B2
公开(公告)日：2006-04-18
申请号：US10647716
申请日：2003-08-25
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.
摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。优选的实施方案将细胞形成为肾或花生的形状。这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的切换场可以以跨过阵列的有效和均匀的方式切换单元的磁化。

36. 发明授权

US06358635B1 Magnetic recording sensor with stabilizing shield 有权
标题翻译：带稳定屏蔽的磁记录传感器
公开(公告)号：US06358635B1
公开(公告)日：2002-03-19
申请号：US09467138
申请日：1999-12-20
申请人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
发明人： Tai Min , Otto Voegeli , Rongfu Xiao , Cherng-Chyi Han , Po-Kang Wang
IPC分类号： G11B566
CPC分类号： B82Y10/00 , G11B5/11 , G11B5/115 , G11B5/3109 , G11B5/313 , G11B5/3903 , G11B5/66 , Y10S428/90 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic shielding element for a magnetic recording and sensing device which prevents the problem of pop-corn noise or covariance of amplitude noise in the magnetic sensing device. The shielding element has a layer of antiferromagnetic exchange material formed on a layer of single domain first ferromagnetic material. The single domain first ferromagnetic material is stabilized by the antiferromagnetic exchange material. A layer of non-magnetic metal is then formed on the layer of antiferromagnetic exchange material and a layer of second ferromagnetic material is formed on the layer of non-magnetic metal to complete the shielding element. When the single domains of the first ferromagnetic material are disturbed by the strong magnetic fields of a write cycle they relax with a relaxation time of pico seconds and are fully relaxed before a read cycle begins. The fully relaxed layer of first ferromagnetic material then shields the magnetic sensing device from magnetic field fluctuations caused by the slower relaxation of the domains in the layer of second ferromagnetic material during a read cycle.
摘要翻译：一种用于磁记录和感测装置的磁屏蔽元件，其防止弹性玉米噪声或磁感测装置中振幅噪声的协方差问题。屏蔽元件具有形成在单畴第一铁磁材料层上的反铁磁交换材料层。单畴第一铁磁材料由反铁磁交换材料稳定。然后在反铁磁交换材料层上形成一层非磁性金属，并在非磁性金属层上形成一层第二铁磁材料，以完成屏蔽元件。当第一铁磁材料的单个畴被写入周期的强磁场干扰时，它们以微微秒的弛豫时间放松，并且在读周期开始之前完全松弛。第一铁磁材料的完全松弛层然后屏蔽磁感测装置免受在读周期期间由第二铁磁材料层中的畴的较慢松弛引起的磁场波动。

37. 发明授权

US07599158B2 Side reading reduced GMR for high track density 失效
标题翻译：侧视读数降低了高磁轨密度的GMR
公开(公告)号：US07599158B2
公开(公告)日：2009-10-06
申请号：US11716945
申请日：2007-03-12
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
摘要翻译：随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。必须包括非磁性层以防止与硬偏置层的交换耦合。在至少一个实施例中，导电引线用于实现这一点。还描述了用于制造该装置的方法。

38. 发明申请

US20070097734A1 Thermally assisted integrated MRAM design and process for its manufacture 失效
标题翻译：热辅助集成MRAM设计及其制造工艺
公开(公告)号：US20070097734A1
公开(公告)日：2007-05-03
申请号：US11264587
申请日：2005-11-01
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.
摘要翻译：存储元件使用传统的MTJ进行读取，另外一个单独的磁性参考堆栈在信息被写入时被短暂加热。然后将该信息静磁施加在位于附近的MTJ自由层上。以这种方式，MTJ可以针对最大dr / r进行优化，而参考堆可以优化以获得最佳稳定性，因为没有半选择问题。还描述了用于制造存储元件的工艺。

39. 发明授权

US07211874B2 Magnetic random access memory array with free layer locking mechanism 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制
公开(公告)号：US07211874B2
公开(公告)日：2007-05-01
申请号：US10818581
申请日：2004-04-06
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L29/82
CPC分类号： G11C11/16
摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

40. 发明授权

US07203039B2 Side reading reduced GMR for high track density 失效
标题翻译：侧视读数降低了高磁轨密度的GMR
公开(公告)号：US07203039B2
公开(公告)日：2007-04-10
申请号：US10856181
申请日：2004-05-28
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.
摘要翻译：随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。必须包括非磁性层以防止与硬偏置层的交换耦合。在至少一个实施例中，导电引线用于实现这一点。

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