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31. 发明申请

WO2019075454A1 SYSTEMS AND METHODS FOR SPOT BEAM AND LINE BEAM CRYSTALLIZATION 审中-公开
公开(公告)号：WO2019075454A1
公开(公告)日：2019-04-18
申请号：PCT/US2018/055846
申请日：2018-10-15
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S. , PAN, Wenkai , SONG, Ruobing , CHOI, Insung , WONG, Vernon
IPC分类号： B23K26/066 , C30B13/24 , C30B35/00
摘要： Method and systems for crystallizing a thin film provide an optics system configured to produce a laser spot beam directed towards the thin film and truncate the laser spot beam before the laser spot beam comes into contact with the thin film. The truncated laser spot beam is continually translated in a first direction while irradiating an amorphous silicon area of the thin film to generate a molten zone in the irradiated amorphous silicon area, where the thin film cools and solidifies to form crystal grains.

32. 发明申请

WO2015127036A1 METHODS AND SYSTEMS FOR CONTROLLED LATERAL SOLIDIFICATION 审中-公开
标题翻译：用于控制横向固化的方法和系统
公开(公告)号：WO2015127036A1
公开(公告)日：2015-08-27
申请号：PCT/US2015/016559
申请日：2015-02-19
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S. , YU, Miao
IPC分类号： B23K26/354 , C30B13/24 , H01L21/266
CPC分类号： C30B13/24 , B23K26/0084 , C30B29/06 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/268
摘要： The present disclosure is directed to methods and systems for processing a thin film. An exemplary method can include providing the thin film on a non-absorbing substrate, patterning the thin film to form a patterned region comprising a plurality of sides, and irradiating the patterned region with a first laser pulse having a fluence that is sufficient to melt a first sub-region of the patterned region without melting a second sub-region of the patterned region proximal to a first side of the patterned region.
摘要翻译：本公开涉及用于处理薄膜的方法和系统。一个示例性的方法可以包括在非吸收衬底上提供薄膜，图案化薄膜以形成包括多个侧面的图案化区域，并且用具有足以使其熔化的能量密度的第一激光脉冲照射图案化区域图案化区域的第一子区域，而不熔化图案化区域的靠近图案化区域的第一侧的第二子区域。

33. 发明申请

WO2015127031A1 SEQUENTIAL LASER FIRING FOR THIN FILM PROCESSING 审中-公开
标题翻译：用于薄膜处理的顺序激光扫描
公开(公告)号：WO2015127031A1
公开(公告)日：2015-08-27
申请号：PCT/US2015/016552
申请日：2015-02-19
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S. , YU, Miao
IPC分类号： C30B13/24 , H01L21/00 , H01L21/02 , H01L21/268
CPC分类号： C30B13/24 , B23K26/0006 , B23K26/0066 , B23K26/0622 , B23K2201/40 , B23K2203/166 , C30B13/06 , C30B29/06 , H01L21/02686 , H01L21/02691
摘要： The present disclosure is directed to methods and systems for processing a thin film. An exemplary method can include irradiating a first region of the thin film with a first laser pulse with a first energy density sufficient to partially melt the first region and cause crystal grain lateral growth from a seed region within the first region after the first laser pulse and irradiating the first region of the thin film with at least one sequential laser pulse with a time interval after the first laser pulse and a second energy density sufficient to delay crystal nucleation and extend lateral crystal growth within the first region without partially melting the film.
摘要翻译：本公开涉及用于处理薄膜的方法和系统。示例性方法可以包括用第一能量密度的第一激光脉冲照射薄膜的第一区域，该第一激光脉冲足以部分地熔化第一区域并在第一激光脉冲之后引起第一区域内的种子区域的晶粒横向生长，以及用第一激光脉冲之后的时间间隔的至少一个顺序的激光脉冲照射薄膜的第一区域，以及足以延迟晶体成核并延长第一区域内的横向晶体生长而不使膜部分熔化的第二能量密度。

34. 发明申请

WO2017120584A1 METHODS AND SYSTEMS FOR SPOT BEAM CRYSTALLIZATION 审中-公开
标题翻译：用于点光束结晶的方法和系统
公开(公告)号：WO2017120584A1
公开(公告)日：2017-07-13
申请号：PCT/US2017/012716
申请日：2017-01-09
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S. , PAN, Wenkai
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , B23K26/0006 , B23K26/0081 , B23K26/0622 , B23K26/082 , B23K26/0861 , B23K26/354 , B23K2201/40 , B23K2203/172 , B23K2203/56 , H01L21/02683 , H01L21/02686 , H01L21/02691
摘要： Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across the thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.
摘要翻译：用于使薄膜结晶的方法和系统提供了激光束斑点，该斑点不断地在薄膜上前进以产生持续的完整或部分熔融区域，该熔融区域在薄膜上平移并结晶以形成均匀的，小颗粒的晶体结构或晶粒。

35. 发明申请

WO2003046965A1 SPECIALIZED SUBSTRATES FOR USE IN SEQUENTIAL LATERAL SOLIDIFICATION PROCESSING 审中-公开
标题翻译：用于顺序式固化处理的专用基材
公开(公告)号：WO2003046965A1
公开(公告)日：2003-06-05
申请号：PCT/US2001/044563
申请日：2001-11-28
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S.
IPC分类号： H01L21/20
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02532 , H01L21/02667
摘要： Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.
摘要翻译：公开了具有改进的有效导热性用于顺序侧向凝固过程的基底。在一种布置中，基板包括玻璃基底层，邻近基底层的表面形成的低电导率层，与低电导率层相邻形成的高导电性层，与高导电层相邻形成的硅化合物层，以及形成在硅化合物层上的硅层。在替代布置中，衬底包括内部地下熔融层，其在随后的顺序横向固化处理期间用作储热器。

36. 发明公开

EP1866463A2 LINE SCAN SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS 审中-公开
标题翻译：逐行扫描薄膜连续横向固化
公开(公告)号：EP1866463A2
公开(公告)日：2007-12-19
申请号：EP06740461.6
申请日：2006-04-04
申请人： The Trustees of Columbia University in the City of New York
发明人： IM, James, S. , VAN DER WILT, Paul, C.
IPC分类号： C30B13/00 , C30B28/08
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.

37. 发明公开

EP1196947A1 SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD 审中-公开
标题翻译：表面钝化薄膜硅期间和之后连续横向结晶处理步骤
公开(公告)号：EP1196947A1
公开(公告)日：2002-04-17
申请号：EP00919501.7
申请日：2000-03-21
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： IM, James, S. , SPOSILI, Robert, S. , CROWDER, Mark, A.
IPC分类号： H01L21/31 , H01L21/00 , H01L21/26 , H01L21/38
CPC分类号： H01L21/02686 , B23K26/0075 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K2201/40 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L21/302
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

38. 发明公开

EP2212913A1 SYSTEMS AND METHODS FOR PREPARATION OF EPITAXIALLY TEXTURED THICK FILMS 审中-公开
标题翻译：系统及其制造方法外延结构化DICK FILMS
公开(公告)号：EP2212913A1
公开(公告)日：2010-08-04
申请号：EP08852907.8
申请日：2008-11-21
申请人： The Trustees of Columbia University in the City of New York
发明人： IM, James, S.
IPC分类号： H01L29/00 , H01L31/036
CPC分类号： H01L21/3221 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L31/0236 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

39. 发明公开

EP1812958A1 SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED POLY-SILICON FILMS 审中-公开
标题翻译：系统和生成方法的关于晶体取向来控制多晶硅片
公开(公告)号：EP1812958A1
公开(公告)日：2007-08-01
申请号：EP04811722.0
申请日：2004-11-18
申请人： The Trustees of Columbia University in the City of New York
发明人： IM, James, S. , VAN DER WILT, Paul, Christian
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L21/02609 , B23K26/0622 , B23K26/066 , C30B13/24 , H01L21/02595 , H01L21/02678 , H01L21/02686 , H01L21/2026
摘要： In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

40. 发明公开

EP2576873A1 SINGLE-SCAN LINE-SCAN CRYSTALLIZATION USING SUPERIMPOSED SCANNING ELEMENTS 审中-公开
标题翻译：单扫描线扫描结晶使用重复扫描元素
公开(公告)号：EP2576873A1
公开(公告)日：2013-04-10
申请号：EP10852635.1
申请日：2010-12-30
申请人： The Trustees of Columbia University in the City of New York
发明人： IM, James, S. , VAN DER WILT, Paul, C.
IPC分类号： C30B13/00
CPC分类号： C30B28/08 , B23K26/0081 , B23K26/067 , C30B1/08 , C30B13/24
摘要： The disclosure relates to methods and systems for single-scan line-scan crystallization using superimposed scanning elements. In one aspect, the method includes generating a plurality of laser beam pulses from a pulsed laser source, wherein each laser beam pulse has a fluence selected to melt the thin film and, upon cooling, induce crystallization in the thin film; directing a first laser beam pulse onto a thin film using a first beam path; advancing the thin film at a constant first scan velocity in a first direction; and deflecting a second laser beam pulse from the first beam path to a second beam path using an optical scanning element such that the deflection results in the film experiencing a second scan velocity of the laser beam pulses relative to the thin film, wherein the second scan velocity is less than the first scan velocity.
摘要翻译：本公开涉及使用叠加扫描元件的单扫描线扫描结晶的方法和系统。在一个方面，该方法包括从脉冲激光源产生多个激光束脉冲，其中每个激光束脉冲具有被选择以注入薄膜的注量，并且在冷却时引起薄膜中的结晶; 使用第一光束路径将第一激光束脉冲引导到薄膜上; 以恒定的第一扫描速度沿第一方向推进薄膜; 以及使用光学扫描元件将第二激光束脉冲从第一光束路径偏转到第二光束路径，使得偏转导致薄膜经历激光束脉冲相对于薄膜的第二扫描速度，其中第二扫描速度小于第一扫描速度。

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