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31. 发明授权

US5974070A II-VI laser diode with facet degradation reduction structure 失效
标题翻译：具有小面降解结构的II-VI激光二极管
公开(公告)号：US5974070A
公开(公告)日：1999-10-26
申请号：US972025
申请日：1997-11-17
申请人： Michael A. Haase , Paul Frederic Baude
发明人： Michael A. Haase , Paul Frederic Baude
IPC分类号： H01S5/10 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/0625 , H01S5/16 , H01S5/323 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/16 , H01S5/347 , H01S5/0264 , H01S5/028 , H01S5/0425 , H01S5/0625
摘要： A II-VI semiconductor laser diode having a semiconductor body comprising a plurality of semiconductor layers forming a pn junction, a facet at one end of the body, and a reference electrode. The laser diode further includes a facet degradation reduction electrode located adjacent to the facet. The facet degradation reduction electrode is electrically isolated from a forward bias electrode. The facet degradation reduction electrode is used to establish an electric field sufficient to reduce facet degradation. In one embodiment, this electric field is established by applying a reverse-bias voltage between the facet electrode and the reference electrode. In another embodiment, this electric field is established by electrically connecting the facet electrode to the reference electrode.
摘要翻译：具有半导体主体的II-VI半导体激光二极管，该半导体主体包括形成pn结的多个半导体层，在主体一端的小面和参考电极。激光二极管还包括邻近小面定位的小面降解还原电极。小面降解还原电极与正向偏置电极电隔离。小面降解还原电极用于建立足以减少小面降解的电场。在一个实施例中，通过在小面电极和参考电极之间施加反向偏置电压来建立该电场。在另一实施例中，通过将小面电极与参考电极电连接来建立该电场。

32. 发明授权

US5395791A Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy 失效
标题翻译：通过原子层外延和迁移强化外延生长具有量子阱的II VI激光二极管
公开(公告)号：US5395791A
公开(公告)日：1995-03-07
申请号：US139614
申请日：1993-10-20
申请人： Hwa Cheng , James M. DePuydt , Michael A. Haase , Jun Qiu
发明人： Hwa Cheng , James M. DePuydt , Michael A. Haase , Jun Qiu
IPC分类号： H01S5/00 , H01L21/363 , H01L33/00 , H01S5/34 , H01S5/347 , H01L21/203
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02395 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02491 , H01L21/02507 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L2924/0002 , H01L33/0087 , H01S5/3403 , H01S5/3406 , H01S5/342
摘要： A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
摘要翻译：使用原子层外延（ALE）和/或迁移增强外延（MEE）来生长II-VI激光二极管中的高效量子阱的方法。激光二极管的衬底和先前生长的层在MBE室中被加热到小于或等于约200℃的温度。将Cd，Zn和Se的来源交替注入室内，以生长包括Cd，Zn和Se的单层的短周期应变层超晶格（SPSLS）量子阱层。量子阱层由符号[（CdSe）m（ZnSe）n] p描述，其中m，n和p是整数。

33. 发明授权

US4301509A Method for cooking meat or poultry in thermal oven 失效
标题翻译：在烤箱中烹制肉类或家禽的方法
公开(公告)号：US4301509A
公开(公告)日：1981-11-17
申请号：US93685
申请日：1979-11-13
申请人： Michael A. Haase , Edward B. Miller , Charles W. Eichelberger , Scott E. Cutler , Robert J. Wojnarowski
发明人： Michael A. Haase , Edward B. Miller , Charles W. Eichelberger , Scott E. Cutler , Robert J. Wojnarowski
IPC分类号： F24C7/00 , G06F15/20 , H05B1/02
CPC分类号： F24C7/006 , F24C7/085
摘要： Meat or poultry is cooked automatically in a thermal oven to a desired degree of doneness by a chosen time. The temperature of the meat or poultry is monitored, and linear extrapolations are made therefrom. These extrapolations are compared to the course the cooking should follow, and the oven temperature is automatically varied to correct deviations from the ideal course.
摘要翻译：肉或家禽在热烘箱中自动烹饪至所需时间的期望程度。监测肉类或家禽的温度，并由此进行线性外推。将这些外推与烹饪应遵循的过程进行比较，并且烘箱温度自动变化，以纠正与理想过程的偏差。

34. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

35. 发明授权

US08748911B2 Stable light source 有权
标题翻译：稳定的光源
公开(公告)号：US08748911B2
公开(公告)日：2014-06-10
申请号：US13003491
申请日：2009-07-14
申请人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
发明人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
IPC分类号： H01L29/18
CPC分类号： H05B33/0812 , H01L25/0753 , H01L33/502 , H01L33/507 , H05B33/0857 , Y02B20/343
摘要： Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
摘要翻译：公开了发光系统。发光系统发射具有第一颜色的输出光。发光系统包括响应于第一信号发射第一波长的光的第一电致发光器件。第一波长基本上与第一信号无关。所发射的第一波长光的强度基本上与第一信号成比例。发光系统还包括第一发光元件，其包括第二电致发光器件和第一光转换层。第二电致发光器件响应于第二信号发射第二波长的光。第一光转换层包括半导体势阱，并将第二波长的至少一部分光转换成比第二波长长的第三波长的光。发光系统将第一波长的光与第三波长的光组合，以形成第一颜色的输出光。当第一和第二信号中的一个信号从信号的最大额定值的约50％变化到最大额定值的约100％时，但是第一信号与第二信号的比率基本保持不变，输出的第一颜色光线基本保持不变。

36. 发明授权

US08488641B2 II-VI MQW VSEL on a heat sink optically pumped by a GaN LD 失效
标题翻译： II-VI MQW VSEL在由GaN LD光学泵浦的散热器上
公开(公告)号：US08488641B2
公开(公告)日：2013-07-16
申请号：US13060554
申请日：2009-08-18
申请人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01S3/14 , H01S5/00
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

37. 发明授权

US08461568B2 Re-emitting semiconductor construction with enhanced extraction efficiency 有权
标题翻译：重新发射半导体结构，提高了提取效率
公开(公告)号：US08461568B2
公开(公告)日：2013-06-11
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层形成再发射半导体结构（RSC）。堆叠包括将第一波长的光转换成第二波长的光的有源区，该有源区包括至少一个势阱。堆叠还包括从堆叠的外表面延伸到活动区域的无效区域。在堆叠中形成凹陷，其从外表面延伸到非活性区域。平均凹陷深度为无活性区域的厚度的至少50％或最近的潜在井距离的至少50％。在平面图中，凹陷可以具有至少40％的包装密度。凹陷部也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

38. 发明申请

US20130075774A1 Light Converting And Emitting Device With Minimal Edge Recombination 有权
标题翻译：具有最小边缘重组的光转换和发射装置
公开(公告)号：US20130075774A1
公开(公告)日：2013-03-28
申请号：US13701065
申请日：2011-05-25
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

39. 发明授权

US08385380B2 Monochromatic light source 有权
标题翻译：单色光源
公开(公告)号：US08385380B2
公开(公告)日：2013-02-26
申请号：US13060643
申请日：2009-07-28
申请人： Catherine A. Leatherdale , Michael A. Haase
发明人： Catherine A. Leatherdale , Michael A. Haase
IPC分类号： H01S5/00
CPC分类号： H01S5/041 , H01S5/02476 , H01S5/183 , H01S5/423
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的电致发光器件。发光系统还包括光腔，其增强来自发光系统的顶表面的光的发射并抑制来自发光系统的一个或多个侧面的光的发射。光腔包括半导体多层堆叠，其接收所发射的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。半导体多层堆叠包括II-VI势阱。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少10倍。

40. 发明授权

US08318552B2 Method for forming gate structures 有权
标题翻译：形成栅极结构的方法
公开(公告)号：US08318552B2
公开(公告)日：2012-11-27
申请号：US12665094
申请日：2008-05-20
申请人： Jeffrey H. Tokie , Michael A. Haase , Robert J. Schubert , Michael W. Bench , Donald J. McClure , Grace L. Ho
发明人： Jeffrey H. Tokie , Michael A. Haase , Robert J. Schubert , Michael W. Bench , Donald J. McClure , Grace L. Ho
IPC分类号： H01L21/677 , H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L27/124 , H01L21/6776 , H01L27/1225 , H01L29/4908 , H01L29/7869
摘要： A process for forming gate structures is described. A web comprises a substrate, a plurality of conductive elements disposed on the substrate, and a conductive anodization bus. The web is moved through an anodization station to form a plurality of gate structures comprising a plurality of gate dielectrics adjacent to a plurality of gate electrodes. A process for forming electronic devices further providing a semiconductor, a source electrode, and a drain electrode is described.
摘要翻译：描述了用于形成栅极结构的工艺。网状物包括衬底，设置在衬底上的多个导电元件和导电阳极氧化母线。幅材移动通过阳极氧化站以形成包括与多个栅电极相邻的多个栅极电介质的多个栅极结构。描述了进一步提供半导体，源电极和漏电极的电子器件的形成工艺。

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