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31. 发明授权

US06542672B2 Opto-mechanical assembly 有权
公开(公告)号：US06542672B2
公开(公告)日：2003-04-01
申请号：US10092470
申请日：2002-03-08
申请人： Jack L. Jewell , Stanley Swirhun , Mikhail Kaluzhny , Andrew Moore
发明人： Jack L. Jewell , Stanley Swirhun , Mikhail Kaluzhny , Andrew Moore
IPC分类号： G02B630
CPC分类号： G02B6/4206 , G02B6/423 , G02B6/4232 , G02B6/4246 , G02B6/4249 , G02B6/4292
摘要： A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.

32. 发明授权

US06421474B2 Electro-opto mechanical assembly for coupling a light source or reciever to an optical waveguide 失效
标题翻译：用于将光源或接收器耦合到光波导的电光机械组件
公开(公告)号：US06421474B2
公开(公告)日：2002-07-16
申请号：US09822207
申请日：2001-04-02
申请人： Jack L. Jewell , Stanley Swirhun , Mikhail Kaluzhny , Andrew Moore
发明人： Jack L. Jewell , Stanley Swirhun , Mikhail Kaluzhny , Andrew Moore
IPC分类号： G02B612
CPC分类号： G02B6/4206 , G02B6/423 , G02B6/4232 , G02B6/4246 , G02B6/4249 , G02B6/4292
摘要： A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed on the bottom surface of the first wafer and in optical communication with the optical element; and an optical waveguide; wherein the first wafer and the optical element form an optical relay which relays light between the discrete opto-electronic transducer and the optical waveguide and thereby forms an efficient optical coupling between the discrete opto-electronic transducer and the optical waveguide.
摘要翻译：提供了一种新的电光机械组件。所述电光机械组件包括：第一晶片，所述晶片具有顶表面和底表面; 设置在所述第一晶片的一个表面上的至少一个光学元件; 设置在所述第一晶片的底表面上并且与所述光学元件光学连通的至少一个分立的光电换能器元件; 和光波导; 其中所述第一晶片和所述光学元件形成光中继器，所述光继电器在所述离散光电换能器与所述光波导之间中继光，从而在所述离散光电换能器与所述光波导之间形成有效的光耦合。

33. 发明授权

US06075804A Semiconductor device having an oxide defined aperture 失效
标题翻译：具有氧化物限定孔径的半导体器件
公开(公告)号：US06075804A
公开(公告)日：2000-06-13
申请号：US15059
申请日：1998-01-28
申请人： Dennis G. Deppe , Jack L. Jewell
发明人： Dennis G. Deppe , Jack L. Jewell
IPC分类号： H01S5/183 , H01S3/19 , H01S3/08
CPC分类号： H01S5/18308 , H01S5/18311 , H01S5/2063
摘要： An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed above the first layer, the second layer being oxidized less than the first layer and providing material to modify the laterally oriented second region and thereby define an aperture. Additionally, a method for producing the aperture is disclosed.
摘要翻译：提供了改进的孔径。所述孔包括：至少第一层; 所述第一层在横向取向的第一区域中被氧化; 所述第一层在横向取向的第二区域内被修饰，所述第二区域被氧化得小于所述第一区域; 设置在所述第一层上方的第二层，所述第二层被氧化得小于所述第一层，并且提供材料以改变所述横向定向的第二区域，从而限定孔。另外，公开了一种用于制造孔的方法。

34. 发明授权

US5903589A Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device 失效
公开(公告)号：US5903589A
公开(公告)日：1999-05-11
申请号：US986401
申请日：1997-12-08
申请人： Jack L. Jewell
发明人： Jack L. Jewell
IPC分类号： G02B3/00 , H01L33/10 , H01S5/183 , H01S5/20 , H01S5/22 , H04L29/08 , H01S3/19
CPC分类号： H01S5/18355 , G02B3/00 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18341 , H04L67/34 , H01L33/105 , H01S5/0042 , H01S5/18358 , H01S5/18369 , H01S5/18372 , H01S5/2059 , H01S5/2063 , H01S5/2068 , H01S5/2215 , H04L69/329
摘要： A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

35. 发明授权

US5859864A Extended wavelength lasers having a restricted growth surface and graded lattice mismatch 失效
标题翻译：具有受限生长表面和分级晶格失配的扩展波长激光器
公开(公告)号：US5859864A
公开(公告)日：1999-01-12
申请号：US739020
申请日：1996-10-28
申请人： Jack L. Jewell
发明人： Jack L. Jewell
IPC分类号： H01S5/02 , H01S5/183 , H01S5/22 , H01S5/32 , H01S3/19
CPC分类号： H01S5/18311 , H01S5/22 , H01S5/0207 , H01S5/0211 , H01S5/3201 , H01S5/3202
摘要： An improved semiconductor structure is provided. The semiconductor structure comprises a first layer, the first layer having a restricted growth surface having a region with a transverse dimension D, the first layer having a first lattice constant L.sub.1 ; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the transition layers has lattice constants between L.sub.1 and a second lattice constant L.sub.2 where the first transition layer has a lattice constant closer to the L.sub.1 than L.sub.2 and the last transition layer has a lattice constant closer to the L.sub.2 than L.sub.1 ; and a second layer disposed on the transition region, the second layer having the second lattice constant L.sub.2 ; wherein: the transition region has an average fractional change in lattice constant characterized by .kappa. where .kappa.=D/T){(L.sub.2 -L.sub.1)/L.sub.1 }, where 0
摘要翻译：提供了一种改进的半导体结构。半导体结构包括第一层，第一层具有受限制的生长表面，其具有横向尺寸D的区域，第一层具有第一晶格常数L1; 第一，最后和至少一个中间过渡层，所述过渡层形成过渡区域，所述过渡区域设置在所述第一层上方，所述过渡区域具有垂直厚度T，并且其中所述过渡层中的至少一个具有晶格常数在L1和第二晶格常数L2之间，其中第一过渡层具有比L2更靠近L1的晶格常数，并且最后的过渡层具有比L1更靠近L2的晶格常数; 以及设置在所述过渡区域上的第二层，所述第二层具有所述第二晶格常数L2; 其中：所述过渡区域具有以kappa为特征的晶格常数的平均分数变化，其中kappa = D / T）{（L2-L1）/ L1}，其中0 < kappa | / =2μm。

36. 发明授权

US5729566A Light emitting device having an electrical contact through a layer containing oxidized material 失效
标题翻译：具有通过包含氧化材料的层的电接触的发光器件
公开(公告)号：US5729566A
公开(公告)日：1998-03-17
申请号：US659942
申请日：1996-06-07
申请人： Jack L. Jewell
发明人： Jack L. Jewell
IPC分类号： H01S5/02 , H01S5/042 , H01S5/183 , H01S5/20 , H01S3/038
CPC分类号： H01S5/18341 , H01S5/18308 , H01S5/18311 , H01S5/18372 , H01S5/2059 , H01S5/2081
摘要： An improved light emitting device is provided. In a first embodiment, the light emitting device comprises: a first conductive layer having a first conductivity type; a light emitting material, the light emitting material disposed above the first conductive layer and in electrical communication therewith; a current aperture region, the current aperture region comprising at least one layer of oxidizable material, the layer of oxidizable material having a first region which is non-oxidized surrounded by a second region which is oxidized in order to form a current aperture in the oxidizable material, the current aperture region further comprising a third region being non-oxidized and at least adjacent to the second region, the current aperture region disposed above the light emitting material and in electrical communication therewith; a second conductive layer having a second conductivity type, the second conductive layer being disposed above the current aperture region and in electrical communication therewith; at least one electrically conductive channel for providing electrical communication to the light emitting material, the channel extending through the third region of the oxidizable material. Additionally, a method for constructing the light emitting device is also provided.
摘要翻译：提供了一种改进的发光器件。在第一实施例中，发光器件包括：具有第一导电类型的第一导电层; 发光材料，所述发光材料设置在所述第一导电层上方并与其电连通; 电流开口区域，所述电流开口区域包括至少一层可氧化材料，所述可氧化材料层具有第一区域，该第一区域被被氧化的第二区域所包围，所述第二区域被氧化，以形成可氧化的所述电流开口区域还包括不被氧化并且至少邻近所述第二区域的第三区域，所述电流孔径区域设置在所述发光材料上方并与其电连通; 具有第二导电类型的第二导电层，所述第二导电层设置在所述电流开口区域上方并与其电连通; 至少一个导电通道，用于提供与发光材料的电连通，所述通道延伸穿过可氧化材料的第三区域。此外，还提供了一种用于构造发光器件的方法。

37. 发明授权

US5642376A Visible light surface emitting semiconductor laser 失效
标题翻译：可见光表面发射半导体激光器
公开(公告)号：US5642376A
公开(公告)日：1997-06-24
申请号：US26326
申请日：1993-03-04
申请人： Gregory R. Olbright , Jack L. Jewell
发明人： Gregory R. Olbright , Jack L. Jewell
IPC分类号： H01S5/00 , H01S5/04 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2302/00 , H01S5/041 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S5/3215 , H01S5/32308 , H01S5/32325 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347
摘要： A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors. For radiation in the blue portion of the spectrum, the laser includes an active region of InGaN or GaN quantum wells and AlN/AlGaN mirrors.
摘要翻译：公开了一种垂直腔表面发射激光器，其包括夹在两个分布式布拉格反射器之间的激光腔。激光腔包括一对间隔层，该间隔层围绕一个或多个活性光学发光量子阱层，其在可见光中具有带隙，其用作该器件的有源发光材料。激光腔的厚度为mλ/ 2neff，其中m为整数，λ为激光辐射的自由空间波长，neff为空腔的有效折射率。通过将底部反射镜和衬底重新掺杂到具有相反导电类型的上反射镜的一个导电类型和重掺杂区域以形成二极管结构并向二极管结构施加合适的电压来实现激光器的电泵浦。对于光谱的黄色到绿色部分的辐射，激光器包括GaP或AlGaP量子阱和AlP / AlGaP反射镜的有源层。对于光谱蓝色部分的辐射，激光器包括InGaN或GaN量子阱和AlN / AlGaN反射镜的有源区。

38. 发明授权

US5258990A Visible light surface emitting semiconductor laser 失效
标题翻译：可见光表面发射半导体激光器
公开(公告)号：US5258990A
公开(公告)日：1993-11-02
申请号：US790964
申请日：1991-11-07
申请人： Gregory R. Olbright , Jack L. Jewell
发明人： Gregory R. Olbright , Jack L. Jewell
IPC分类号： H01S5/00 , H01S5/04 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2302/00 , H01S5/041 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S5/3215 , H01S5/32308 , H01S5/32325 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347
摘要： A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.
摘要翻译：公开了一种垂直腔表面发射激光器，其包括夹在两个分布式布拉格反射器之间的激光腔。激光腔包括一对间隔层，该间隔层围绕一个或多个活性光学发光量子阱层，其在可见光中具有带隙，其用作该器件的有源发光材料。激光腔的厚度为mλ/ 2neff，其中m为整数，λ为激光辐射的自由空间波长，neff为空腔的有效折射率。通过将底部反射镜和衬底重新掺杂到具有相反导电类型的上反射镜的一个导电类型和重掺杂区域以形成二极管结构并向二极管结构施加合适的电压来实现激光器的电泵浦。描述了用于产生红色，绿色和蓝色辐射的本发明的具体实施例。

39. 发明授权

US5077483A Network topology for reduced blocking and photonic system implementation thereof 失效
标题翻译：网络拓扑用于减少阻塞和光电系统的实现
公开(公告)号：US5077483A
公开(公告)日：1991-12-31
申请号：US349281
申请日：1989-05-08
申请人： Thomas J. Cloonan , Stephen J. Hinterlong , Harvard S. Hinton , Frank K. Hwang , Jurgen Jahns , Jack L. Jewell , Anthony L. Lentine , Frederick B. McCormick, Jr. , David A. B. Miller , Miles J. Murdocca , Michael E. Prise , Gaylord W. Richards
发明人： Thomas J. Cloonan , Stephen J. Hinterlong , Harvard S. Hinton , Frank K. Hwang , Jurgen Jahns , Jack L. Jewell , Anthony L. Lentine , Frederick B. McCormick, Jr. , David A. B. Miller , Miles J. Murdocca , Michael E. Prise , Gaylord W. Richards
IPC分类号： H04B10/02 , H04Q3/52 , H04Q11/00
CPC分类号： H04Q11/0062 , H04Q11/0005 , H04Q2011/0052 , H04Q2011/0081 , H04Q2011/009
摘要： A reduced-blocking system where a perfect shuffle equivalent network having a plurality of node stages successively interconnected by link stages, is advantageously combined with expansion before the node stages and/or concentration after the node stages in a manner allowing the design of a system with arbitrarily low or zero blocking probability. An illustrative photonic system implementation uses free-space optical apparatus to effect a low loss, crossover interconnection of two-dimensional arrays of switching nodes comprising, for example, symmetric self electro-optic effect devices (S-SEEDs). Several low loss beam conbination techniques are used to direct multiple arrays of beams to an S-SEED array, and to redirect a reflected output beam array to a subsequent node stage.

40. 发明授权

US5034344A Method of making a surface emitting semiconductor laser 失效
标题翻译：制造表面发射半导体激光器的方法
公开(公告)号：US5034344A
公开(公告)日：1991-07-23
申请号：US538577
申请日：1990-06-18
申请人： Jack L. Jewell , Axel Scherer
发明人： Jack L. Jewell , Axel Scherer
IPC分类号： H01S5/183 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/18347 , H01S5/18305 , H01S5/18358 , H01S5/18361 , H01S5/3432
摘要： A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.
摘要翻译：制造垂直腔表面发射激光的方法及其制造方法，其中外延生长III-V异质结，以包括由量子阱区的发射波长分开的两个干涉镜之间的量子阱有源区。通过化学辅助的氙离子束蚀刻蚀刻该异质结构的小柱。在蚀刻之前，在外延半导体上沉积顶部金属接触。光通过具有大于量子阱区的带隙的衬底发射。

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