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    • 35. 发明申请
    • HIGH PERFORMANCE MOSFET
    • 高性能MOSFET
    • WO2009046239A1
    • 2009-04-09
    • PCT/US2008/078652
    • 2008-10-03
    • INTERNATIONAL BUSINESS MACHINES CORPORATIONZHU, HuilongWANG, Jing
    • ZHU, HuilongWANG, Jing
    • H01L21/8232H01L27/06
    • H01L21/26586H01L29/66651H01L29/7833
    • A semiconductor structure which exhibits high device performance and improved short channel effects is provided. In particular, the present invention provides a metal oxide semiconductor field effect transistor (MOFET) that includes a low dopant concentration within an inversion layer of the structure; the inversion layer is an epitaxial semiconductor layer that is formed atop a portion of the semiconductor substrate. The inventive structure also includes a well region of a first conductivity type beneath the inversion layer, wherein the well region has a central portion and two horizontally abutting end portions. The central portion has a higher concentration of a first conductivity type dopant than the two horizontally abutting end portions. Such a well region may be referred to as a non-uniform super-steep retrograde well.
    • 提供了具有高器件性能和改善的短沟道效应的半导体结构。 特别地,本发明提供一种金属氧化物半导体场效应晶体管(MOFET),其包括在该结构的反转层内的低掺杂剂浓度; 反型层是形成在半导体衬底的一部分顶上的外延半导体层。 本发明的结构还包括在反转层下面的第一导电类型的阱区,其中阱区具有中心部分和两个水平邻接的端部。 中心部分具有比两个水平邻接端部更高的第一导电类型掺杂剂的浓度。 这样的井区域可以被称为不均匀的超陡逆行井。