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31. 发明授权

US07463227B2 Display device comprising a light guide 失效
标题翻译：显示装置包括光导
公开(公告)号：US07463227B2
公开(公告)日：2008-12-09
申请号：US10628942
申请日：2003-07-29
申请人： Gerardus G. P. Van Gorkom
发明人： Gerardus G. P. Van Gorkom
IPC分类号： G09G3/34
CPC分类号： G02B6/005 , G02B6/0033 , G02B6/0051 , G02B6/3522 , G02B6/357 , G02B26/02 , G09G3/3473 , G09G2320/0252
摘要： A display device comprises a light guide and a movable element. By locally exerting a force on the movable element by means of selection means, optical contact between the movable element and the light guide can be brought about. Light emanates from the display device at the locations where optical contact takes place. Measures are taken to employ the force exerted by the selection means as efficiently as possible. This can be achieved by making the force act at the location where the optical contact takes place and/or by reducing other adhesive forces (caused, inter alia, by differences in pressure, static charging, surface stresses, van der Waals' forces and/or chemical forces).
摘要翻译：显示装置包括光导和可移动元件。通过借助于选择装置在可移动元件上局部施加力，可以实现可移动元件与光导之间的光学接触。在发生光学接触的位置，光从显示装置发出。采取措施尽可能高效地采用选择装置施加的力。这可以通过使力作用在发生光学接触的位置和/或通过减少其它粘合力（尤其由于压力，静电充电，表面应力，范德华力）和/ 或化学力）。

32. 发明授权

US5442253A Thin-type picture display device 失效
标题翻译：薄型图像显示装置
公开(公告)号：US5442253A
公开(公告)日：1995-08-15
申请号：US210962
申请日：1994-03-21
申请人： Gerardus G. P. Van Gorkom , Petrus H. F. Tormpenaars
发明人： Gerardus G. P. Van Gorkom , Petrus H. F. Tormpenaars
IPC分类号： G09G1/20 , H01J29/02 , H01J29/08 , H01J31/12 , H04N5/70 , H04N9/12 , H01J29/70
CPC分类号： G09G1/20 , H01J29/028 , H01J29/085 , H01J31/124 , H04N5/70 , H04N9/12 , H01J2329/8625 , H01J2329/863 , H01J2329/8645
摘要： Picture display device having a vacuum envelope for displaying pictures composed of pixels on a luminescent screen, comprising a plurality of juxtaposed sources for producing electrons, local electron ducts cooperating with the sources and having walls of electrically insulating material with a secondary emission coefficient suitable for electron transport for transporting, through vacuum, produced electrons in the form of electron currents through juxtaposed trajectories at a short distance from the luminescent screen, and means for withdrawing each electron current at predetermined locations from its duct and directing it towards a desired location on the luminescent screen for producing a picture composed of pixels.
摘要翻译：具有用于显示由荧光屏上的像素组成的图像的真空外壳的图像显示装置，包括用于产生电子的多个并置源，与源配合的局部电子管，并且具有适于电子的二次发射系数的电绝缘材料壁运输通过真空，以电子流的形式通过与荧光屏短距离并列的轨迹产生电子，以及用于从预定位置从其管道中取出每个电子流并将其引导到发光管上的所需位置的装置用于生成由像素组成的图片的画面。

33. 发明授权

US4801994A Semiconductor electron-current generating device having improved cathode efficiency 失效
标题翻译：具有改善的阴极效率的半导体电子发生器件
公开(公告)号：US4801994A
公开(公告)日：1989-01-31
申请号：US21937
申请日：1987-03-05
申请人： Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts
发明人： Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts
IPC分类号： H01J1/30 , H01J1/308 , H01J29/04 , H01J31/12 , H01J31/38 , H01J37/073 , H01L21/027 , H01L33/00 , H01L29/12 , H01L29/34
CPC分类号： H01J1/308
摘要： By providing an intrinsic semiconductor region in a reverse biased junction cathode between an n-type surface region and a p-type zone, a maximum field is present over the intrinsic region in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, while in addition electrons to be emitted at a sufficient energy are generated by means of tunneling.

34. 发明授权

US4516146A Electron sources and equipment having electron sources 失效
标题翻译：具有电子源的电子源和设备
公开(公告)号：US4516146A
公开(公告)日：1985-05-07
申请号：US439144
申请日：1982-11-04
申请人： John M. Shannon , Arthur M. E. Hoeberechts , Gerardus G. P. Van Gorkom
发明人： John M. Shannon , Arthur M. E. Hoeberechts , Gerardus G. P. Van Gorkom
IPC分类号： H01J1/30 , H01J1/308 , H01J29/04 , H01J37/305 , H01L49/00 , H01L29/34
CPC分类号： H01J1/308
摘要： An electron source having a rapid response time comprises at least one n-p-n structure (and possibly an array of said n-p-n structure) formed in a silicon or other semiconductor body (10) by a p-type first region (1) between n-type second and third regions (2 and 3). Electrons (24) are generated in the n-p-n structure (2,1,3) for emission into free space (20) from a surface area (4) of the body (10) after flowing from the second region (2) through the first and third regions (1 and 3). The n-p-n structure (2,1,3) has electrode connections (12 and 13) only to the n-type second and third regions (2 and 3). The first region (1) provides a barrier region restricting the flow of electrons from the second region (2) to the third region (3) until a potential difference (V) is applied between the electrode connections (12 and 13) to bias the third region (3) positive with respect to the second region (2) and to establish a supply of hot electrons (24) injected into the third region (3) with sufficient energy to overcome the potential barrier present between the surface area (4) and free space (20). The barrier region (1) forms depletion layers with both the n-type second and third regions (2 and b 3) and is depleted of holes by the merging together of these depletion layers at least when the potential difference (V) is applied to establish said supply of hot electrons (24). The n-p-n structure can be provided in a mesa portion (9) of the body (10) at a window in an insulating layer (11) so as to form a compact arrangement having very low associated capacitances. The electron sources may be used in cathode-ray tubes, display devices and even electron lithography equipment.
摘要翻译：具有快速响应时间的电子源包括通过p型第一区域（1）在n型第二区域（1）中形成于硅或其它半导体本体（10）中的至少一个npn结构（以及可能的所述npn结构的阵列）和第三区域（2和3）。在npn结构（2,1,3）中产生电子（24），用于在从第二区域（2）流过第一区域（2）之后从主体（10）的表面区域（4）发射到自由空间（20）和第三区域（1和3）。 n-p-n结构（2,1,3）仅具有到n型第二和第三区域（2和3）的电极连接（12和13）。第一区域（1）提供限制从第二区域（2）到第三区域（3）的电子流动的势垒区域，直到在电极连接件（12和13）之间施加电位差（V）第三区域（3）相对于第二区域（2）是正的，并以足够的能量建立注入到第三区域（3）中的热电子（24）的供应，以克服存在于表面区域（4）和自由空间（20）。阻挡区域（1）形成具有n型第二和第三区域（2和b 3）的耗尽层，并且通过将这些耗尽层合并在一起，至少当电位差（V）被施加到建立热电子供应（24）。 n-p-n结构可以在绝缘层（11）中的窗口处设置在主体（10）的台面部分（9）中，以形成具有非常低的相关电容的紧凑布置。电子源可以用于阴极射线管，显示装置甚至电子光刻设备中。

35. 发明授权

US4871911A Electron beam apparatus comprising a semiconductor electron emitter 失效
标题翻译：包括半导体电子发射体的电子束装置
公开(公告)号：US4871911A
公开(公告)日：1989-10-03
申请号：US77060
申请日：1987-07-17
申请人： Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts , Karel D. Van Der Mast , Harm Tolner
发明人： Gerardus G. P. Van Gorkom , Arthur M. E. Hoeberechts , Karel D. Van Der Mast , Harm Tolner
IPC分类号： H01J1/30 , H01J1/308 , H01J37/073
CPC分类号： H01J1/308 , H01J37/073
摘要： An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.
摘要翻译：一种电子束装置，包括半导体电子发射器，其发射表面尺寸由设置在半导体元件中的p-n结的尺寸确定。通过相对于装置的电子 - 光学性质优化发射表面的尺寸，实现了发射器，其结合最佳波束形成或成像与装置所要求的足够大的束流和高束电流密度。

36. 发明授权

US4709185A Device for electron emission including device for providing work function-reducing layer and method of applying such a layer 失效
标题翻译：用于电子发射的装置，包括用于提供功函数减少层的装置和应用这种层的方法
公开(公告)号：US4709185A
公开(公告)日：1987-11-24
申请号：US743221
申请日：1985-06-10
申请人： Arthur M. E. Hoeberechts , Henricus A. M. Van Hal , Harm Tolner , Gerardus G. P. Van Gorkom
发明人： Arthur M. E. Hoeberechts , Henricus A. M. Van Hal , Harm Tolner , Gerardus G. P. Van Gorkom
IPC分类号： H01J1/30 , H01J1/13 , H01J1/308 , H01J1/32 , H01J1/34 , H01J9/02 , H01J9/04 , H01J9/12 , C23C14/00
CPC分类号： H01J1/32 , H01J1/13 , H01J1/308 , H01J1/34 , H01J2201/3423
摘要： An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.
摘要翻译：电子发射表面设置有从合适的反应获得的降低电子功函数的材料。反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。加热时，铯释放并沉积在电子发射表面上。

37. 发明授权

US4352015A Anti-contamination diaphragm for an electron beam apparatus 失效
标题翻译：用于电子束装置的防污隔膜
公开(公告)号：US4352015A
公开(公告)日：1982-09-28
申请号：US180712
申请日：1980-08-25
申请人： Alfred Jore , Gerardus G. P. Van Gorkom , Nicolaas H. Dekkers
发明人： Alfred Jore , Gerardus G. P. Van Gorkom , Nicolaas H. Dekkers
IPC分类号： H01J37/20 , H01J37/09 , H01L21/027 , G01N23/00
CPC分类号： H01J37/09
摘要： In order to reduce object contamination during the examination or machining of the object in an electron beam apparatus, an anti-contamination diaphragm is provided in place of the customary diaphragm. The anti-contamination diaphragm has a central aperture which corresponds to a customary diaphragm aperture, and a concentric annular aperture for transmitting a non-paraxial hollow beam which irradiates a ring around the paraxial focus on the object. The conical hollow anti-contamination beam forms a barrier against contaminating residual gas molecules, notably hydrocarbon molecules.
摘要翻译：为了减少在电子束装置中的物体的检查或加工过程中的物体污染，提供了抗污染隔膜来代替常规隔膜。抗污染隔膜具有对应于常规隔膜孔的中心孔，以及用于传送非近轴中空梁的同心环形孔，其将围绕近轴焦点的环照射在物体上。锥形中空抗污染光束形成阻挡污染残留气体分子的屏障，特别是烃分子。

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