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    • 31. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07027347B2
    • 2006-04-11
    • US10749510
    • 2004-01-02
    • Kenichi ShigenamiShunichi Sukegawa
    • Kenichi ShigenamiShunichi Sukegawa
    • G11C8/00
    • G11C7/106G11C7/1051G11C7/1078G11C7/1087G11C8/12G11C11/4082G11C11/4096G11C2207/2245
    • A semiconductor memory device for improving the utilization of a shared data bus and the data transfer rate in a multi-bank DRAM and realizing high speed data accessing without increasing a scale of a control circuit, wherein the multi-bank DRAM has memory banks provided with an address register for holding a write address, a data register for holding write data, an address matching detection circuit for detecting whether an address held in the address register matches with an address input this time, and when reading is performed continuously from writing on the same address of the same memory bank, reading is not performed on a memory cell specified by a read address and data held in the data register is output as read data, so that memory accessing made continuously to the same address can be performed at a high speed.
    • 一种半导体存储器件,用于改善共享数据总线的利用率和数据传输速率,并且在不增加控制电路规模的情况下实现高速数据访问,其中多存储体DRAM具有提供有存储器 用于保持写入地址的地址寄存器,用于保持写入数据的数据寄存器,用于检测保持在地址寄存器中的地址是否与此时输入的地址一致的地址匹配检测电路, 相同存储体的相同地址,读取不是由读取地址指定的存储单元执行,数据寄存器中保存的数据作为读取数据输出,从而能够以高位执行对连续地进行相同地址的存储器访问 速度。
    • 32. 发明授权
    • Address access path control circuit
    • 地址访问路径控制电路
    • US5805522A
    • 1998-09-08
    • US706373
    • 1996-08-30
    • Shunichi SukegawaKoichi AbeMakoto SaekiYukihide Suzuki
    • Shunichi SukegawaKoichi AbeMakoto SaekiYukihide Suzuki
    • G11C11/413G11C7/10G11C11/401G11C11/408G11C11/409G11C8/00G11C7/00
    • G11C7/1051G11C7/1048
    • An address access path control circuit designed for shorter access time and small the layout area with low power consumption and noise. Our control circuit has a latching circuit LMO2A, a main output circuit MO3, and a common-bus driving circuit CBD for holding the level of a pair of common-buses CB/CB.sub.-- at the ground level during a prescribed period of time in which address transition takes place while the read data is output to common-buses CB/CB.sub.-- at a timing corresponding to the address signal. A data output buffer DO-BUF outputs to the outside the data transmitted from common-buses CB/CB.sub.-- to data output lines OD/OD.sub.-- in response to the input of control signal DOE. A control signal DOE is input to data output buffer DO-BUF during the period in which data output lines OD/OD.sub.-- are at the ground level.
    • 一种地址访问路径控制电路,设计用于更短的访问时间,并且具有低功耗和噪声的布局区域较小。 我们的控制电路有一个锁存电路LMO2A,一个主输出电路MO3和一个共用总线驱动电路CBD,用于在一段规定的时间内保持一对公共汽车CB / CB-的电平, 在与地址信号相对应的定时将读取数据输出到公共总线CB / CB-时发生地址转换。 响应于控制信号DOE的输入,数据输出缓冲器DO-BUF向外部输出从公共总线CB / CB-发送到数据输出线OD / OD-的数据。 在数据输出线OD / OD-处于地电平的期间,控制信号DOE输入到数据输出缓冲器DO-BUF。
    • 33. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US5596535A
    • 1997-01-21
    • US267267
    • 1994-06-28
    • Tathunori MushyaMasayasu KawamuraShunichi Sukegawa
    • Tathunori MushyaMasayasu KawamuraShunichi Sukegawa
    • G11C11/401G11C29/00G11C29/04H01L21/82G11C7/00G11C8/00
    • G11C29/80G11C29/84
    • A semiconductor storage device equipped with redundant circuits designed to increase the operating speed and to simplify the layout by providing for the detection of the storage of a faulty address and access to the faulty address so as to substitute a spare word line for a faulty word line. The semiconductor storage device includes a MOSFET for causing current to flow through a pair of fuse means by a complementary address signal at one end of a fuse means corresponding to each bit of the faulty address. The other end thereof is connected to a wired OR logic so as to generate a decision signal. The fuse means corresponding to the MOSFET which is turned on by the faulty address signal is cut off to store a faulty address. The faulty address storage and comparison units can be formed with the pair of fuses and the MOSFET. High-speed operation and a high-density layout in the form of a matrix can thus be achieved efficiently by switching the faulty circuit to a spare circuit while the normal decoder is operating.
    • 一种装备有冗余电路的半导体存储装置,其设计用于通过提供对故障地址的存储的检测和对故障地址的访问来提高操作速度和简化布局,以便将备用字线替换为有缺陷的字线 。 半导体存储装置包括用于使电流通过对应于故障地址的每个位的熔丝装置的一端的互补地址信号流过一对熔丝装置的MOSFET。 其另一端连接到有线OR逻辑,以产生判定信号。 对应于通过故障地址信号导通的MOSFET的熔丝装置被切断以存储故障地址。 故障地址存储和比较单元可以由一对保险丝和MOSFET形成。 因此,在通常的解码器工作时,通过将故障电路切换到备用电路,能够有效地实现矩阵形式的高速运转和高密度布局。
    • 40. 发明授权
    • Signal transmission circuit having intermediate amplifier circuit
    • 信号传输电路具有中间放大电路
    • US06265907B1
    • 2001-07-24
    • US09053365
    • 1998-04-01
    • Shunichi Sukegawa
    • Shunichi Sukegawa
    • H03L522
    • G11C7/065G11C7/1048G11C7/1051G11C7/1069G11C7/1078
    • A signal transmission circuit which enables the distance of signal transmission to be increased, while the signal delay and power consumption are reduced. The signal transmission circuit includes a driver circuit, a receiver circuit, an equalizer circuit that flattens the output of the driver circuit, and an intermediate amplifier circuit. The intermediate amplifier circuit is connected to input/output shared terminals in the wiring that connects the driver circuit and the receiver circuit. With the aid of the positive feedback of the intermediate amplifier circuit, a differential signal output from the driver circuit is amplified and then transmitted to the receiver circuit.
    • 信号传输电路能够在信号延迟和功耗降低的同时增加信号传输的距离。 信号传输电路包括驱动电路,接收器电路,使驱动电路的输出变平的均衡器电路和中间放大器电路。 中间放大器电路连接到连接驱动电路和接收电路的布线中的输入/输出共用端子。 借助于中间放大器电路的正反馈,从驱动电路输出的差分信号被放大然后传输到接收器电路。