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    • 31. 发明授权
    • Data recording medium, data recording method and data reproducing method
    • 数据记录介质,数据记录方法和数据再现方法
    • US06385744B1
    • 2002-05-07
    • US09204157
    • 1998-12-03
    • Hideo AndoHideki TakahashiHiroaki Unno
    • Hideo AndoHideki TakahashiHiroaki Unno
    • H04L122
    • H04L1/0078G11B20/18G11B20/1883
    • This invention is to record data and skip an ECC block containing a defective sector when the defective sector is detected in an optical disk in which data is recorded in an ECC block unit constructed by 16 sectors and record a physical block number obtained by adding an amount of 16 sectors for each skipping into a reserve field of each sector of a next ECC block. Thus, continuous data such as moving pictures can be recorded in the ECC block unit, an ECC block containing the defective sector can be detected later in a case wherein the power supply is turned OFF by mistake or power failure in the course of recording when the recording process is effected while skipping an ECC block containing a defective sector, and data recorded up to the interruption can be reproduced without being influenced by the defective sector.
    • 本发明是在将数据记录在由16个扇区构成的ECC块单元中的光盘中检测到缺陷扇区时,记录数据并跳过包含缺陷扇区的ECC块,并记录通过添加量获得的物理块号 每个16个扇区跳过下一个ECC块的每个扇区的保留字段。 因此,诸如运动图像的连续数据可以被记录在ECC块单元中,在以下情况下可以检测到包含缺陷扇区的ECC块:在记录过程中电源被错误地关闭或电源故障的情况下 在跳过含有缺陷扇区的ECC块的同时进行记录处理,并且可以在不受缺陷扇区影响的情况下再现记录到中断的数据。
    • 34. 发明授权
    • Powdered base material treated with organic silicon compounds and their method for producing
    • 用有机硅化合物处理的粉状基材及其制备方法
    • US06200580B1
    • 2001-03-13
    • US09149797
    • 1998-09-09
    • Masaakira HorinoHideki Takahashi
    • Masaakira HorinoHideki Takahashi
    • A61K600
    • C09C3/12A61K8/11A61K8/19A61K8/29A61K8/585A61K8/891A61K2800/412A61K2800/43A61Q1/02A61Q1/12A61Q19/00C01P2006/19
    • A powdered base material treated with organic silicon compounds comprised of a powdered base material to which is preferably affixed one or more of metal hydroxides, hydroxy group-containing inorganic oxides and the gelated products thereof and to which are also affixed a reactive alkyl polysiloxane and a methyl hydrogen polysiloxane, preferably the methyl hydrogen polysiloxane represented by the following formula: (CH3)3SiO[(CH3)2SiO]m(CH3HSiO)nSi(CH3)3, wherein m and n are each an integer, and m+n=7 to 50, more preferably 7 to 25 and m:n =1:0.2 to 1:4, more preferably m:n=1:0.5 to 1:2. The obtained powdered base material treated with organic silicon compounds is superior in adhesion to the skin, free from flocculation, particularly smooth and soft to touch, has a color tone extremely high in saturation (good color extension ) when used in conjunction with a colored pigment and is also superior in hydrophobic properties and water-proofness without losing the characteristics of being free from residual hydrogen, and the properties of high safety and high quality.
    • 用有机硅化合物处理的粉末状基材,其由粉末状基材组成,优选将一种或多种金属氢氧化物,含羟基的无机氧化物及其凝胶化产物固定,并且其上还附着有反应性烷基聚硅氧烷和 甲基氢聚硅氧烷,优选由下式表示的甲基氢聚硅氧烷:其中m和n各自为整数,m + n = 7〜50,更优选为7〜25,m:n = 1:0.2〜1:4 ,更优选m:n = 1:0.5〜1:2。 用有机硅化合物处理得到的粉末状基材具有优异的抗皮肤粘合性,无絮凝,特别光滑且触感柔软,与着色颜料结合使用时具有极高的饱和度(良好的颜色延伸)色调 疏水性和防水性也优异,不失去残留氢的特性,安全性高,质量好的特点。
    • 36. 发明授权
    • Insulated trench semiconductor device with particular layer structure
    • 具有特殊层结构的绝缘沟槽栅极半导体器件
    • US6040599A
    • 2000-03-21
    • US721576
    • 1996-09-25
    • Hideki Takahashi
    • Hideki Takahashi
    • H01L21/331H01L29/06H01L29/08H01L29/10H01L29/739H01L29/76H01L27/108H01L29/74
    • H01L29/0696H01L29/66348H01L29/7397H01L29/0623H01L29/0847
    • It is an object to compatibly realize a decrease in an on-state voltage and an increase in a current capable of turn-off. An N layer (43) having an impurity concentration higher than that of an N.sup.- layer (42) is formed between the N.sup.- layer (42) and a P base layer (44). In the exposed surface of the P base layer (44) connected to an emitter electrode (51), a P.sup.+ layer (91) having an impurity concentration higher than that of the P base layer (44) is formed. The formation of the N layer (43) allows the carrier distribution in the N.sup.- layer (42) to be close to the carrier distribution of a diode, so that the on-state voltage is decreased while maintaining high the current value capable of turn-off. Furthermore, the P.sup.+ layer (91) allows holes to easily go through form the P base layer (44) to the emitter electrode (51), which increases the current value capable of turn-off.
    • 本发明的目的是兼容地实现导通状态电压的降低和能够关断的电流的增加。 在N层(42)和P基层(44)之间形成杂质浓度高于N-层(42)的N层(43)。 在与发射极(51)连接的P基底层(44)的露出面上形成杂质浓度高于P基底层(44)的P +层(91)。 N层(43)的形成允许N-层(42)中的载流子分布接近二极管的载流子分布,使得导通状态电压降低,同时保持高电流值能够转动 -off。 此外,P +层(91)允许孔容易地从P基底层(44)流到发射极(51),这增加了能关断的电流值。