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    • 32. 发明申请
    • MUSICAL TONE SIGNAL-PROCESSING APPARATUS
    • 音乐信号处理装置
    • US20110132178A1
    • 2011-06-09
    • US12947671
    • 2010-11-16
    • Kenji SatoTakaaki Hagino
    • Kenji SatoTakaaki Hagino
    • G10H7/00
    • H04S5/02H04S7/40H04S2400/11H04S2420/07
    • A musical tone signal processing apparatus configured to freely expand or contract an acoustic image. A setting means may set a second reference localization, a first function that stipulates expansion of the boundary of one end of a direction range, and a second function that stipulates expansion of the boundary of an other end of said direction range. In addition, an output direction indicated by localization information of an extraction signal that exists in the direction range in which the conditions have been set in this manner is shifted by an acoustic image scaling means. The acoustic image in said direction range is expanded or contracted accordingly. In other words, the acoustic image formed by the extraction signal is expanded or contracted by shifting the output direction for each extraction signal extracted from within the direction range.
    • 音乐信号处理装置,被配置为自由地扩展或收缩声像。 设置装置可以设定第二参考定位,规定方向范围的一端的边界的扩展的第一功能和规定所述方向范围的另一端的边界的扩展的第二功能。 此外,存在于以这种方式设定条件的方向范围内的提取信号的定位信息指示的输出方向由声像缩放装置移位。 所述方向范围内的声像被相应地扩大或收缩。 换句话说,通过从在方向范围内提取的每个提取信号的输出方向偏移来扩展或缩小由提取信号形成的声像。
    • 34. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20110024749A1
    • 2011-02-03
    • US12936559
    • 2009-04-07
    • Kenji Sato
    • Kenji Sato
    • H01L31/0272
    • H01L27/14618H01L31/0203H01L2924/0002H01L2924/00
    • A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film.This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.
    • 本发明的放射线检测器具有设置在辐射敏感半导体层,载体选择性高电阻膜和公共电极的露出表面之间的绝缘非胺阻挡层和可固化合成树脂膜。 该阻挡层可以进一步抑制半导体层与可固化合成树脂膜之间的化学反应,并且可以防止流过半导体层的暗电流的增加。 由于在阻挡层和半导体层之间不发生化学反应,所以半导体层不会劣化。 此外,通过设置在可固化合成树脂膜的上表面上的辅助板,可以制造由于温度变化而没有翘曲和破裂的辐射检测器。