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31. 发明申请

US20170345901A1 P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM 审中-公开
公开(公告)号：US20170345901A1
公开(公告)日：2017-11-30
申请号：US15676161
申请日：2017-08-14
申请人： Yukiko ABE , Naoyuki UEDA , Yuki NAKAMURA , Shinji MATSUMOTO , Yuji SONE , Mikiko TAKADA , Ryoichi SAOTOME
发明人： Yukiko ABE , Naoyuki UEDA , Yuki NAKAMURA , Shinji MATSUMOTO , Yuji SONE , Mikiko TAKADA , Ryoichi SAOTOME
IPC分类号： H01L29/24 , H01L29/04 , C01F11/04 , C01F5/06 , C01G3/02 , H01L29/786 , G09G3/32 , H01L27/32
CPC分类号： H01L29/242 , C01F5/06 , C01F11/04 , C01G3/02 , C01P2002/02 , G09G3/32 , H01L27/3244 , H01L29/04 , H01L29/78693
摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x

32. 发明申请

US20140299877A1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR 有权
标题翻译：用于形成金属氧化物薄膜，金属氧化物薄膜的涂覆液体，场效应晶体管和制造场效应晶体管的方法
公开(公告)号：US20140299877A1
公开(公告)日：2014-10-09
申请号：US14361150
申请日：2012-11-28
申请人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji SONE , Shinji Matsumoto , Mikiko Takada , Ryoichi Saotome
发明人： Yuki Nakamura , Naoyuki Ueda , Yukiko Abe , Yuji SONE , Shinji Matsumoto , Mikiko Takada , Ryoichi Saotome
IPC分类号： H01L29/786 , H01L29/221 , H01L21/02 , H01L29/66
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L29/221 , H01L29/66969 , H01L29/7869
摘要： A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.
摘要翻译：用于形成金属氧化物薄膜的涂布液包括：无机铟化合物; 无机钙化合物或无机锶化合物，或其二者; 和有机溶剂。

33. 发明申请

US20170154998A1 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 审中-公开
公开(公告)号：US20170154998A1
公开(公告)日：2017-06-01
申请号：US15432299
申请日：2017-02-14
申请人： Naoyuki UEDA , Yukiko ABE , Hiroshi KONDO , Yuki NAKAMURA , Yuji SONE
发明人： Naoyuki UEDA , Yukiko ABE , Hiroshi KONDO , Yuki NAKAMURA , Yuji SONE
IPC分类号： H01L29/786 , G09G3/36 , G09G3/3258 , H01L27/12 , H01L29/24
CPC分类号： H01L29/7869 , G09G3/3258 , G09G3/3655 , G09G2320/043 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/78693
摘要： A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.

34. 发明申请

US20120206068A1 HOLE FORMATION METHOD, MULTILAYER WIRING, SEMICONDUCTOR DEVICE, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM CONTAINING VIA HOLE FORMED BY THE HOLE FORMATION METHOD 有权
标题翻译：孔形成方法，多层布线，半导体器件，显示元件，图像显示装置和通过孔形成方法形成的孔的系统
公开(公告)号：US20120206068A1
公开(公告)日：2012-08-16
申请号：US13372874
申请日：2012-02-14
申请人： Yuji SONE , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
发明人： Yuji SONE , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Kazuhiro Murata , Kazuyuki Masuda
IPC分类号： H05B37/02 , B05D1/04 , B05D3/02 , H05K1/11 , B05D5/00
CPC分类号： H01L21/76802 , H05K3/4644 , H05K2203/308
摘要： A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.
摘要翻译：一种孔形成方法，包括将柱状液体施加到基材上，从而形成支柱; 在形成有柱的基材上涂覆绝缘膜形成材料，从而形成绝缘膜; 移除所述柱以在所述绝缘膜中形成开口; 对形成有开口部的绝缘膜进行热处理。

35. 发明申请

US20080294805A1 METHOD OF ACQUIRING STATUS INFORMATION OF I/O UNITS 审中-公开
标题翻译：获取I / O单元状态信息的方法
公开(公告)号：US20080294805A1
公开(公告)日：2008-11-27
申请号：US12123975
申请日：2008-05-20
申请人： Yuji SONE , Kouji Hada
发明人： Yuji SONE , Kouji Hada
IPC分类号： G06F3/00
CPC分类号： G05B19/058 , G05B2219/13051 , G05B2219/15032
摘要： A method of acquiring status information of I/O units connected to a numerical controller capable of transmitting status information indicative of particulars of an abnormality occurred in any of the I/O units with less influence on an amount of transmittable information of input/output data. When an abnormality has occurred in the I/O unit, the I/O unit transmits an output signal with a status abnormality notifying bit set to a programmable controller (PC) in the numerical controller. The PC stores information indicative of I/O units in which the status abnormality has occurred as status-abnormality acquiring I/O unit information, in a storage device of the PC. The PC requests the status information to the I/O unit in which the abnormality has occurred according to the status-abnormality acquiring I/O unit information. In response to the request, the I/O unit transmits the status information to the PC.
摘要翻译：一种获取与数字控制器连接的I / O单元的状态信息的方法，所述数字控制器能够发送指示异常特定的状态信息的任何I / O单元，对输入/输出数据的可发送信息量的影响较小。当I / O单元发生异常时，I / O单元将数据控制器中的可编程控制器（PC）设置为状态异常通知位的输出信号。 PC在PC的存储装置中存储表示其中发生状态异常的I / O单元的信息作为状态异常获取I / O单元信息。 PC根据状态异常获取I / O单元信息向发生异常的I / O单元请求状态信息。响应该请求，I / O单元将状态信息发送给PC。

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