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    • 31. 发明授权
    • Method for forming thin film transistor with lateral crystallization
    • 用横向结晶形成薄膜晶体管的方法
    • US06426246B1
    • 2002-07-30
    • US09789347
    • 2001-02-21
    • Ting-Chang ChangDu-Zen PengChun-Yen Chang
    • Ting-Chang ChangDu-Zen PengChun-Yen Chang
    • H01L2100
    • H01L29/66757H01L29/78675
    • A method for forming thin film transistor with lateral crystallization. The method at least includes the following steps. First of all, an insulation substrate is provided. Then, an amorphous silicon layer is provided on the insulation substrate. The seeds are formed by annealing a portion of the amorphous silicon layer by excimer laser system, and the lateral-growth grain is formed by using the seeds to grow laterally by annealing the amorphous silicon layer, wherein the amorphous silicon layer defines an active region. Then, sequentially a dielectric layer and a polysilicon layer is deposited on the active region, wherein the dielectric layer and the polysilicon layer are gate electrodes, a gate is defined on the substrate, and the polysilicon layer is formed by etching. Next, source and drain regions are formed by implanting numerous ions into amorphous silicon layer by using the gate electrode as a mask.
    • 一种用于形成具有横向结晶的薄膜晶体管的方法。 该方法至少包括以下步骤。 首先,提供绝缘基板。 然后,在绝缘基板上设置非晶硅层。 通过准分子激光系统对非晶硅层的一部分进行退火而形成种子,并且通过使晶种通过使非晶硅层退火而横向生长而形成横向生长晶粒,其中非晶硅层限定有源区。 然后,依次在有源区上沉积介质层和多晶硅层,其中介质层和多晶硅层是栅电极,在衬底上限定栅极,并且通过蚀刻形成多晶硅层。 接下来,通过使用栅电极作为掩模,通过将许多离子注入非晶硅层来形成源区和漏区。
    • 32. 发明授权
    • Method of manufacturing aluminum gate electrode
    • 铝栅极电极的制造方法
    • US6110768A
    • 2000-08-29
    • US262234
    • 1999-03-04
    • Ting-Chang ChangDu-Zen PengPo-Sheng Shih
    • Ting-Chang ChangDu-Zen PengPo-Sheng Shih
    • H01L21/28H01L21/336H01L21/00
    • H01L29/66765H01L21/28008
    • A method of manufacturing a method of manufacturing a thin film transistor. An aluminum gate electrode is formed on a substrate. A protective layer is formed on the top surface and the sidewall of the aluminum gate electrode. A gate dielectric layer is formed on the substrate and the protective layer. An intrinsic amorphous-silicon thin film is formed on the gate dielectric layer. A heavily doped amorphous-silicon thin film is formed on the intrinsic amorphous-silicon thin film. A patterned source/drain conductive layer is formed on the heavily doped amorphous-silicon thin film to expose a portion of the heavily doped amorphous-silicon thin film. The portion of the heavily doped amorphous-silicon thin film exposed by the patterned source/drain conductive layer is removed to expose a portion of the intrinsic amorphous-silicon thin film.
    • 一种制造薄膜晶体管的方法的方法。 在基板上形成铝栅电极。 在铝栅电极的顶表面和侧壁上形成保护层。 栅介质层形成在衬底和保护层上。 在栅介质层上形成本征非晶硅薄膜。 在本征非晶硅薄膜上形成重掺杂的非晶硅薄膜。 在重掺杂的非晶硅薄膜上形成图案化的源极/漏极导电层,以暴露部分重掺杂的非晶硅薄膜。 去除由图案化的源极/漏极导电层暴露的重掺杂非晶硅薄膜的部分,以暴露本征非晶硅薄膜的一部分。
    • 34. 发明授权
    • Reflective liquid crystal display device integrated with organic light-emitting device
    • 与有机发光装置集成的反射型液晶显示装置
    • US08300173B2
    • 2012-10-30
    • US12783613
    • 2010-05-20
    • Du-Zen PengRyuji Nishikawa
    • Du-Zen PengRyuji Nishikawa
    • G02F1/1335
    • G02F1/1336G02F1/133553G02F1/133603G02F2001/133616
    • A system for displaying images is provided. The system includes a reflective liquid crystal display device including a first substrate having a pixel unit array thereon. A second substrate is disposed above the first substrate and a liquid crystal layer is disposed therebetween. A plurality of first electrodes is disposed between the second substrate and the liquid crystal layer and corresponds to each pixel unit including a reflective electrode. A second electrode is disposed between the plurality of first electrodes and the liquid crystal layer to serve as a common electrode that controls the liquid crystal layer. An organic light-emissive layer is disposed between the plurality of first electrodes and the second electrode. A light-emitting device is constituted by the plurality of first electrodes, the second electrode, and the organic light-emissive layer to provide light onto the reflective electrode.
    • 提供了一种用于显示图像的系统。 该系统包括反射型液晶显示装置,其包括在其上具有像素单元阵列的第一基板。 第二基板设置在第一基板的上方,液晶层位于其间。 多个第一电极设置在第二基板和液晶层之间,并且对应于包括反射电极的每个像素单元。 第二电极设置在多个第一电极和液晶层之间,用作控制液晶层的公共电极。 有机发光层设置在多个第一电极和第二电极之间。 发光装置由多个第一电极,第二电极和有机发光层构成,以在反射电极上提供光。
    • 38. 发明授权
    • Organic light-emitting device, and methods of forming the same and electronic devices having the same
    • 有机发光装置及其形成方法以及具有该有机发光装置的电子装置
    • US08053981B2
    • 2011-11-08
    • US12151517
    • 2008-05-07
    • Chuan-Yi ChanDu-Zen Peng
    • Chuan-Yi ChanDu-Zen Peng
    • H01J1/62H01J63/04
    • H01L51/5271H01L27/3246H01L27/3276H05B33/06H05B33/22H05B33/28
    • An organic light-emitting device and methods of forming the same are provided. The organic light-emitting device includes: a substrate having a pixel area and a peripheral circuit area; a reflective layer on the substrate, the reflective layer having a first reflective part in the pixel area and a second reflective part in the peripheral circuit area; a first electrode layer having a first part on the first reflective part; a pixel definition layer on the substrate, the pixel definition layer forming a plurality of pixel openings to expose a portion of the first part of the first electrode layer and at least one electrode contact hole to expose the second reflective part; an organic light-emitting layer on the first electrode layer; and a second electrode layer on the organic light-emitting layer, the second electrode layer extending to the peripheral circuit area to electrically couple with the exposed area of the second reflective part.
    • 提供有机发光装置及其形成方法。 有机发光器件包括:具有像素区域和外围电路区域的衬底; 所述反射层在所述基板上具有反射层,所述反射层在所述像素区域具有第一反射部分,在所述外围电路区域中具有第二反射部分; 第一电极层,其具有在所述第一反射部分上的第一部分; 所述像素限定层形成多个像素开口以暴露所述第一电极层的所述第一部分的一部分和至少一个电极接触孔以暴露所述第二反射部分; 在第一电极层上的有机发光层; 以及在所述有机发光层上的第二电极层,所述第二电极层延伸到所述外围电路区域以与所述第二反射部分的所述暴露区域电耦合。