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31. 发明申请

US20090195941A1 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US20090195941A1
公开(公告)日：2009-08-06
申请号：US12012667
申请日：2008-02-05
申请人： Yuchen Zhou , Yimin Guo
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。该侧面图吸收外部磁场通量，将其集中流入传感器的边缘，以促进较大的MR传感器磁化旋转。

32. 发明申请

US20090184704A1 MTJ sensor including domain stable free layer 有权
标题翻译： MTJ传感器包括域稳定自由层
公开(公告)号：US20090184704A1
公开(公告)日：2009-07-23
申请号：US12321772
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R1/20
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

33. 发明授权

US07528457B2 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
标题翻译：形成用于NiFe（自由）MTJ堆叠以增强dR / R的非磁性帽的方法
公开(公告)号：US07528457B2
公开(公告)日：2009-05-05
申请号：US11404446
申请日：2006-04-14
申请人： Cheng T. Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
发明人： Cheng T. Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.
摘要翻译：公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩。任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

34. 发明授权

US07508042B2 Spin transfer MRAM device with magnetic biasing 有权
标题翻译：具有磁偏置的自旋转移MRAM器件
公开(公告)号：US07508042B2
公开(公告)日：2009-03-24
申请号：US11644132
申请日：2006-12-22
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in play by the flow of spin polarized electrons into the free layer allows said magnetic vector to be switched rather than to oscillate between two easy axis directions.
摘要翻译：将分段写入字线添加到自旋转移MRAM结构中用于对自由层进行磁偏置，使得通过自旋极化电子流入自由层而设置的磁化矢量的进动运动允许所述磁矢量而不是在两个易轴方向之间振荡。

35. 发明申请

US20090065909A1 Segmented magnetic shielding elements 失效
公开(公告)号：US20090065909A1
公开(公告)日：2009-03-12
申请号：US12290703
申请日：2008-11-03
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L23/552 , G11C11/14
CPC分类号： H01L27/222 , G11C11/1675 , G11C11/1695
摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

36. 发明申请

US20080272771A1 Magnetic tunnel junction (MTJ) based magnetic field angle sensor 有权
标题翻译：磁隧道结（MTJ）磁场角传感器
公开(公告)号：US20080272771A1
公开(公告)日：2008-11-06
申请号：US11799706
申请日：2007-05-02
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R33/00
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/098
摘要： A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
摘要翻译：用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火，并且在没有外部磁场的情况下第二次退火，从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。

37. 发明授权

US07368301B2 Magnetic random access memory with selective toggle memory cells 失效
公开(公告)号：US07368301B2
公开(公告)日：2008-05-06
申请号：US11340989
申请日：2006-01-27
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2 for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at

38. 发明授权

US07335961B2 Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
标题翻译：具有耦合的软相邻磁性层的磁性随机存取存储器阵列
公开(公告)号：US07335961B2
公开(公告)日：2008-02-26
申请号：US11210637
申请日：2005-08-25
申请人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
摘要翻译：在正交字和位线之间形成MTJ元素。位线是在高导电率层下包括高导电性层和软磁性层的复合线。在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

39. 发明申请

US20070183187A1 Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications 失效
公开(公告)号：US20070183187A1
公开(公告)日：2007-08-09
申请号：US11350119
申请日：2006-02-08
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： A toggle MTJ cell is disclosed that has a nearly balanced SAF free layer with two major sub-layers separated by an anti-parallel coupling layer. Within each major sub-layer, there is a plurality of minor sub-layers wherein adjacent minor sub-layers are separated by a parallel coupling layer. The parallel coupling layer is a non-magnetic layer that may be a one or more of Ta, Cu, Cr, Ru, Os, Re, Rh, Nb, Mo, W, Ir, and V, a metal oxide, or dusting of NiCr, Ta, Cu, or NiFeCr. Magnetic moments of major sub-layers are made to be nearly equal so that the net moment of the SAF free layer is essentially zero. The MTJ cell and SAF free layer preferably have an aspect ratio of from 1 to 5. Ferromagnetic coupling between minor sub-layers enables a lower write current and lower power consumption than conventional toggle cell designs.

40. 发明授权

US07246427B2 Method to achieve both narrow track width and effective longitudinal stabilization in a CPP GMR read head 失效
公开(公告)号：US07246427B2
公开(公告)日：2007-07-24
申请号：US10771481
申请日：2004-02-03
申请人： Yimin Guo , Li-Yan Zhu
发明人： Yimin Guo , Li-Yan Zhu
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/39 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Biasing schemes used for CIP GMR devices were previously thought to be impractical for CPP devices due to current shunting by the abutted hard magnets. In the present invention the CPP stripe is a narrow conductor directly above the free layer. The resistivity of the latter is made to be relatively high so the sensing current diverges very little as it passes through it. This makes it possible to use abutted hard magnets for longitudinal bias with virtually no loss of sensing current due to shunting by the magnets.

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