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31. 发明申请

US20120301985A1 METHOD OF ADJUSTING GAP BETWEEN BUMPS IN PIXEL REGION AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE METHOD 失效
标题翻译：调整像素区域中的脉冲之间的间隙的方法和使用该方法制造显示器件的方法
公开(公告)号：US20120301985A1
公开(公告)日：2012-11-29
申请号：US13449068
申请日：2012-04-17
申请人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
发明人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
IPC分类号： H01L21/336 , H01L33/16
CPC分类号： H01L27/3258 , H01L27/1285 , H01L51/5209
摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.
摘要翻译：一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

32. 发明授权

US07859494B2 Display device and driving method thereof 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US07859494B2
公开(公告)日：2010-12-28
申请号：US11028356
申请日：2005-01-03
申请人： Joon-Hoo Choi , Jong-Moo Huh , In-Su Joo , Chun-Seok Ko
发明人： Joon-Hoo Choi , Jong-Moo Huh , In-Su Joo , Chun-Seok Ko
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0823 , G09G2300/0852 , G09G2310/0248 , G09G2310/0254 , G09G2320/043 , G09G2320/0626 , G09G2360/148
摘要： A display device is provided, which includes: a light emitting element; a storage capacitor; a driving transistor supplying driving current to the light emitting element to emit light; a first switching transistor applying a data voltage to the driving transistor and the storage capacitor in response to a first scanning signal, a light sensor sensing amount of light according to the light emission of the light emitting element and generates a sensing signal depending on the sensed light amount; and a signal controller determining luminance corresponding to the sensing signal, comparing the determined luminance and a target luminance corresponding to the data voltage, and modifies an image signal.
摘要翻译：提供一种显示装置，其包括：发光元件; 存储电容器; 驱动晶体管，向所述发光元件提供驱动电流以发光; 第一开关晶体管，响应于第一扫描信号向驱动晶体管和存储电容器施加数据电压;光传感器，根据发光元件的光发射感测光量，并根据所感测的信号产生感测信号光量以及信号控制器，其确定与所述感测信号对应的亮度，将所确定的亮度与对应于所述数据电压的目标亮度进行比较，并修改图像信号。

33. 发明授权

US07663575B2 Driving circuit for driving organic electroluminescent element, display panel and display apparatus having the same 有权
标题翻译：用于驱动有机电致发光元件的驱动电路，显示面板及其显示装置
公开(公告)号：US07663575B2
公开(公告)日：2010-02-16
申请号：US10865066
申请日：2004-06-10
申请人： Joon-Hoo Choi , In-Su Joo , Beohm-Rock Choi , Jong-Moo Huh
发明人： Joon-Hoo Choi , In-Su Joo , Beohm-Rock Choi , Jong-Moo Huh
IPC分类号： G09G3/30 , G09G3/10
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0833 , G09G2300/0842 , G09G2310/0251 , G09G2310/0262
摘要： A driving circuit for an organic light emitting display apparatus includes first and second switching elements and a driving element. The first switching element is controlled by a scan signal supplied from a scan line. The second switching element is controlled by the scan signal. The driving element provides an end of an organic electroluminescent element with a first reference voltage via the second switching element. The driving element has amorphous silicon thin film transistors so that the manufacturing cost of the organic light emitting display apparatus may be reduced.
摘要翻译：用于有机发光显示装置的驱动电路包括第一和第二开关元件和驱动元件。第一开关元件由从扫描线提供的扫描信号控制。第二开关元件由扫描信号控制。驱动元件通过第二开关元件提供具有第一参考电压的有机电致发光元件的端部。驱动元件具有非晶硅薄膜晶体管，从而可以降低有机发光显示装置的制造成本。

34. 发明授权

US07501658B2 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
标题翻译：包括薄膜晶体管的电致发光器件和制造电致发光器件的方法
公开(公告)号：US07501658B2
公开(公告)日：2009-03-10
申请号：US11858287
申请日：2007-09-20
申请人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
发明人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
IPC分类号： H01L27/15
CPC分类号： H01L27/3244 , H01L27/3262
摘要： An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要翻译：一种电致发光器件，包括电连接到电致发光元件的电致发光元件和薄膜晶体管。薄膜晶体管包括形成在衬底上的栅电极，形成在栅电极上的绝缘层，以及形成在绝缘层上的第一半导体图案。在第一半导体层上形成蚀刻停止层。在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案，并且在蚀刻停止层的另一侧上形成第三半导体图案。在第二半导体图案上形成源电极，在第三半导体图案上形成漏电极。

35. 发明申请

US20070194326A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20070194326A1
公开(公告)日：2007-08-23
申请号：US11676767
申请日：2007-02-20
申请人： Jong-Moo Huh
发明人： Jong-Moo Huh
IPC分类号： H01L33/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1229 , H01L27/1237 , H01L27/3244 , H01L27/3276
摘要： An organic light emitting diode (“OLED”) display includes; a substrate, first and second signal lines which intersect each other and are disposed on the substrate, a switching control electrode connected to the first signal line, a switching input electrode connected to the second signal line, a switching output electrode disposed substantially opposite the switching input electrode with respect to the switching control electrode, a switching semiconductor which partially overlaps the switching input electrode and the switching output electrode, first and second driving control electrodes connected to the switching output electrode, a driving semiconductor disposed between the first and second driving control electrodes, a driving input electrode and a driving output electrode which partially overlap the driving semiconductor and are disposed substantially opposite each other with respect to the driving semiconductor, a first electrode connected to the driving output electrode, a second electrode which faces the first electrode, and a light emitting member disposed between the first electrode and the second electrode.
摘要翻译：有机发光二极管（“OLED”）显示器包括：基板，彼此相交并布置在基板上的基板，第一和第二信号线，连接到第一信号线的开关控制电极，连接到第二信号线的开关输入电极，与开关基本相对设置的开关输出电极与切换控制电极相对的输入电极，与切换输入电极和切换输出电极部分重叠的切换半导体，与切换输出电极连接的第一驱动控制电极和第二驱动控制电极，配置在第一驱动控制部和第二驱动控制部之间的驱动半导体电极，驱动输入电极和驱动输出电极，其部分地与驱动半导体重叠并且相对于驱动半导体基本相对地设置;连接到驱动输出电极的第一电极，面向第一电极的第二电极，和光设置在第一电极和第二电极之间。

36. 发明申请

US20050014379A1 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
标题翻译：包括薄膜晶体管的电致发光器件和制造电致发光器件的方法
公开(公告)号：US20050014379A1
公开(公告)日：2005-01-20
申请号：US10761607
申请日：2004-01-21
申请人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
发明人： Joon-Hoo Choi , In-Su Joo , Beom-Rak Choi , Jong-Moo Huh
IPC分类号： H01L51/50 , H01L21/311 , H01L21/336 , H01L27/32 , H01L29/786 , H05B33/00 , H05B33/10 , H05B33/12 , H05B33/14
CPC分类号： H01L27/3244 , H01L27/3262
摘要： An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要翻译：一种电致发光器件，包括电连接到电致发光元件的电致发光元件和薄膜晶体管。薄膜晶体管包括形成在衬底上的栅电极，形成在栅电极上的绝缘层，以及形成在绝缘层上的第一半导体图案。在第一半导体层上形成蚀刻停止层。在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案，并且在蚀刻停止层的另一侧上形成第三半导体图案。在第二半导体图案上形成源电极，在第三半导体图案上形成漏电极。

37. 发明授权

US08716040B2 Organic light emitting diode display and method for manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US08716040B2
公开(公告)日：2014-05-06
申请号：US13113279
申请日：2011-05-23
申请人： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
发明人： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/1288 , H01L27/3248
摘要： An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.
摘要翻译：一种有机发光二极管（OLED）显示器及其制造方法，所述OLED显示器包括：基板主体; 包括形成在所述基板主体上的多晶有源层和第一电容器电极的多晶硅层图案; 形成在所述多晶硅层图案上的栅极绝缘层图案; 形成在所述栅极绝缘层图案上的包括栅电极和第二电容电极的第一导电层图案; 形成在所述第一导电层图案上的层间绝缘层图案; 以及包括形成在层间绝缘层图案上的源电极，漏电极和像素电极的第二导电层图案。栅极绝缘层图案与多晶硅层图案和第一导电层图案中的任一个同时被图案化。

38. 发明授权

US08519386B2 Organic light emitting diode display with improved crystallinity of driving semiconductor 失效
标题翻译：有机发光二极管显示器具有改善驱动半导体的结晶度
公开(公告)号：US08519386B2
公开(公告)日：2013-08-27
申请号：US13532316
申请日：2012-06-25
申请人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
发明人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
IPC分类号： H01L29/08
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译：一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（“LD”）。驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

39. 发明申请

US20130115726A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS 有权
标题翻译：结晶装置，结晶方法，有机发光显示装置及制造有机发光显示装置的方法
公开(公告)号：US20130115726A1
公开(公告)日：2013-05-09
申请号：US13451980
申请日：2012-04-20
申请人： Sung-Ho Kim , Do-Young Kim , Min-Chul Shin , Min-Hwan Choi , Jong-Moo Huh
发明人： Sung-Ho Kim , Do-Young Kim , Min-Chul Shin , Min-Hwan Choi , Jong-Moo Huh
IPC分类号： H01L51/56 , H01L21/268
CPC分类号： H01L21/268 , H01L21/67115 , H01L27/1229 , H01L27/1285 , H01L27/3262
摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.
摘要翻译：一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域和多个非结晶化区域，激光束多次照射到结晶化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。

40. 发明授权

US08415666B2 Thin film transistor substrate having thin film transistors with improved etching characteristics, method of manufacturing the same, and display apparatus having the same 有权
标题翻译：具有改善蚀刻特性的薄膜晶体管的薄膜晶体管基板及其制造方法以及具有该薄膜晶体管的显示装置
公开(公告)号：US08415666B2
公开(公告)日：2013-04-09
申请号：US12405978
申请日：2009-03-17
申请人： Jong-Moo Huh , Joon-Hoo Choi
发明人： Jong-Moo Huh , Joon-Hoo Choi
IPC分类号： H01L33/00
CPC分类号： H01L27/1251 , H01L27/12 , H01L27/1248 , H01L29/66757 , H01L29/66765
摘要： In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.
摘要翻译：在薄膜晶体管基板中，薄膜晶体管的有源图案包括通过不同工艺步骤图案化的下半导体图案和上半导体图案。下半导体图案限定了薄膜晶体管的沟道区域，并且上半导体图案连接到下半导体图案的侧部并与源电极和漏电极接触。在对应于沟道区域的下半导体图案上形成蚀刻停止层，并且通过与下半导体图案相同的图案化工艺形成蚀刻停止层。此外，在上半导体图案上形成欧姆接触图案，并且通过与上半导体图案相同的图案化工艺形成欧姆接触图案。

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