专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07935951B2 Composite chalcogenide materials and devices 有权
标题翻译：复合硫属化物材料和装置
公开(公告)号：US07935951B2
公开(公告)日：2011-05-03
申请号：US11874719
申请日：2007-10-18
申请人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/143
摘要： An electrical device includes a composite switching material. The composite switching material includes an electrically switchable component and a non-switchable component. In one embodiment, the composite switching material includes a heterogeneous mixture of at least one chalcogenide material and at least one dielectric material. The composite switching material is disposed between two electrodes and the switchable component is transformable from a resistive state to a conductive state upon application of a voltage between the two electrodes, without changing phase.
摘要翻译：电气装置包括复合开关材料。复合开关材料包括可电切换部件和不可切换部件。在一个实施例中，复合开关材料包括至少一种硫族化物材料和至少一种电介质材料的非均相混合物。复合开关材料设置在两个电极之间，并且在不改变相位的情况下施加电压之间，可切换部件可从电阻状态转换为导通状态。

32. 发明申请

US20100027328A1 Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States 有权
标题翻译：使用结晶编程国家的多电平可变电阻记忆单元
公开(公告)号：US20100027328A1
公开(公告)日：2010-02-04
申请号：US12578638
申请日：2009-10-14
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Charles Dennison , Carl Schell
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures. The programming scheme incorporates at least two crystalline programming states and further includes at least a third programming state that may be a crystalline, amorphous or mixed crystalline-amorphous state.
摘要翻译：一种编程电可变电阻存储器件的方法。当应用于包含相变材料作为活性材料的可变电阻存储器件时，该方法利用多个晶体编程状态。结晶编程状态可以根据电阻进行区分，其中不同状态的电阻值随时间稳定并且表现出很小的或没有漂移。因此，编程方案特别适用于多层存储器应用。晶体编程状态可以通过稳定采用不同晶体结构的结晶相或通过稳定结晶相来实现，所述结晶相包括两种或更多种不同结晶学结构的混合物，其在不同结晶学结构的相对比例中变化。编程方案包含至少两个晶体编程状态，并且还包括至少第三编程状态，其可以是晶体，无定形或混合晶体 - 非晶状态。

33. 发明申请

US20090227092A1 Temperature and pressure control methods to fill features with programmable resistance and switching devices 有权
标题翻译：温度和压力控制方法来填充具有可编程电阻和开关器件的特性
公开(公告)号：US20090227092A1
公开(公告)日：2009-09-10
申请号：US12075180
申请日：2008-03-10
申请人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Jeff Fournier , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641
摘要： A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
摘要翻译：可编程电阻，硫族化物，开关或相变材料器件包括具有多个堆叠层的衬底，其包括导电底电极层，其中形成有开口的绝缘层，沉积在绝缘层上的活性材料层，开口和底部电极的选定部分，以及沉积在活性材料层上的顶部电极层。该装置使用温度和压力控制方法来增加活性材料层中的表面迁移率，从而提供绝缘层中的开口，底部电极层的选定的暴露部分和绝缘层的完全覆盖或填充。

34. 发明申请

US20070297213A1 Forming a carbon layer between phase change layers of a phase change memory 有权
公开(公告)号：US20070297213A1
公开(公告)日：2007-12-27
申请号：US11899862
申请日：2007-09-07
申请人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey , Guy Wicker
发明人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey , Guy Wicker
IPC分类号： G11C11/56 , H01L45/00
CPC分类号： H01L45/1233 , H01L27/2427 , H01L45/00 , H01L45/06 , H01L45/1253 , H01L45/1293 , H01L45/141
摘要： A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.

35. 发明申请

US20070063181A1 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US20070063181A1
公开(公告)日：2007-03-22
申请号：US11602923
申请日：2006-11-21
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Isamu Asano
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的第一区域。与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，并且所述第二区域与所述第一区域横向间隔设置。此外，径向存储器件包括设置在第一电极和第二电极之间的电介质层，电介质层具有穿过其中的开口，相变材料设置在开口中，其中相变材料至少部分地设置在第二电极之上。此外，公开了一种制造存储器件的方法。

36. 发明申请

US20070048945A1 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US20070048945A1
公开(公告)日：2007-03-01
申请号：US11495927
申请日：2006-07-28
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L21/336
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

37. 发明申请

US20060233019A1 Reading phase change memories without triggering reset cell threshold devices 有权
标题翻译：读取相位改变存储器，而不触发复位单元阈值器件
公开(公告)号：US20060233019A1
公开(公告)日：2006-10-19
申请号：US11105829
申请日：2005-04-14
申请人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj , Ward Parkinson
发明人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj , Ward Parkinson
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0033 , G11C2013/0054
摘要： A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
摘要翻译：可以读取相变存储器，以便减少读取干扰的可能性。例如，当复位装置升高到电压时，可能会发生读取干扰，导致其阈值装置触发。阈值装置的触发产生位移电流，其可以将复位装置转换成集装置。通过确保复位单元不会达到会导致阈值器件触发的电压，可能会降低读取干扰。

38. 发明授权

US08581223B2 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US08581223B2
公开(公告)日：2013-11-12
申请号：US13039952
申请日：2011-03-03
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

39. 发明授权

US08350661B2 Breakdown layer via lateral diffusion 有权
标题翻译：击穿层通过横向扩散
公开(公告)号：US08350661B2
公开(公告)日：2013-01-08
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/13
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

40. 发明申请

US20110194340A1 Phase Change Device with Offset Contact 有权
标题翻译：具有偏移接触的相变装置
公开(公告)号：US20110194340A1
公开(公告)日：2011-08-11
申请号：US13093109
申请日：2011-04-25
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/126
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译：可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式