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31. 发明授权

US07107115B2 Method for controlling semiconductor processing apparatus 有权
公开(公告)号：US07107115B2
公开(公告)日：2006-09-12
申请号：US11339712
申请日：2006-01-26
申请人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： Occurrence of a process abnormality in a semiconductor processing apparatus is obtained by obtaining an index of a processing size of each of wafers within an X-th lot, in which the X represents an integer, based on data obtained during processing of each of the wafers of the X-th lot, obtaining an index of a processing size of each of wafers within an X+1-th lot, based on data thereof and anticipating an index of a processing sizes of each of wafers within an X+2-th lot, based on the index obtained as to each of the wafers of the X-th lot and the X+1-th lot. A process abnormality occurring during the processing of a wafer of the X+2-th lot is anticipated when the anticipated index of the X+2-th lot exceeds an allowance range.

32. 发明申请

US20060142888A1 Process monitoring device for sample processing apparatus and control method of sample processing apparatus 有权
标题翻译：样品处理装置的过程监控装置和样品处理装置的控制方法
公开(公告)号：US20060142888A1
公开(公告)日：2006-06-29
申请号：US11356099
申请日：2006-02-17
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
IPC分类号： G06F19/00
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.
摘要翻译：一种用于处理真空容器内的样品的等离子体处理装置，包括：多个传感器，用于检测与样品的处理状态相关的多种信息作为监测数据; 数据选择装置，用于选择用于监测等离子体处理装置的如此检测的监视数据的检测时间范围; 用于将所选择的检测时间范围内的监视数据转换为有效信号的信号滤波器; 模型表达单元，用于基于有效信号产生样本的图案化物理形状的预测值; 以及用于显示图案化物理形状预测值的显示屏幕; 其中显示屏幕在样品处理后不测量图案形状，显示图案化的物理形状预测值。

33. 发明授权

US07058467B2 Process monitoring device for sample processing apparatus and control method of sample processing apparatus 有权
公开(公告)号：US07058467B2
公开(公告)日：2006-06-06
申请号：US10987121
申请日：2004-11-15
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
IPC分类号： G06F19/00
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

34. 发明申请

US20050189070A1 PLASMA PROCESSING APPARATUS AND PROCESSING METHOD 失效
标题翻译：等离子体加工设备和加工方法
公开(公告)号：US20050189070A1
公开(公告)日：2005-09-01
申请号：US10875213
申请日：2004-06-25
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.
摘要翻译：本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。

35. 发明授权

US06828165B2 Semiconductor plasma processing apparatus with first and second processing state monitoring units 有权
标题翻译：具有第一和第二处理状态监测单元的半导体等离子体处理装置
公开(公告)号：US06828165B2
公开(公告)日：2004-12-07
申请号：US10438842
申请日：2003-05-16
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor plasma processing apparatus for processing a semiconductor wafer includes a sensor for monitoring at least one processing state of the semiconductor plasma processing apparatus, first and second processing state monitoring units coupled to the sensor, and a selector unit for selecting one of the first and second processing state monitoring units.
摘要翻译：一种用于处理半导体晶片的半导体等离子体处理装置，包括用于监视半导体等离子体处理装置的至少一个处理状态的传感器，耦合到传感器的第一和第二处理状态监控单元，以及选择器单元，用于选择第一和第第二处理状态监控单元。

36. 发明授权

US06733618B2 Disturbance-free, recipe-controlled plasma processing system and method 有权
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US06733618B2
公开(公告)日：2004-05-11
申请号：US09946503
申请日：2001-09-06
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： C23F100
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.
摘要翻译：一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果成为目标值。基于由最佳配方计算模型生成的配方来控制等离子体处理器。

37. 发明授权

US06706543B2 Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a therefor 有权
标题翻译：监控和/或控制半导体制造装置的方法和方法
公开(公告)号：US06706543B2
公开(公告)日：2004-03-16
申请号：US10196208
申请日：2002-07-17
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results. The system includes a sensor for monitoring a processing state of the processing apparatus, a sensed data storage unit for preserving sensed data sent from the sensor, an input device for inputting measured values for processing results of semiconductor devices processed by the processing apparatus, a processing result measured value storage unit for preserving the inputted processing result measured values, a model equation generation unit for generating a model equation from preserved sensed data and processing result measured values, a model equation storage unit for preserving the generated model equation, a model equation based prediction unit for predicting processing results from the preserved model equation and the sensed data, and a process recipe control unit for controlling processing conditions of the processing apparatus from predicted processing results.
摘要翻译：提供一种用于在预测其处理结果的同时控制和/或监视半导体处理装置的方法和系统。该系统包括用于监视处理装置的处理状态的传感器，用于保存从传感器发送的感测数据的感测数据存储单元，用于输入用于处理由处理装置处理的半导体装置的处理结果的测量值的输入装置，结果测量值存储单元，用于保存输入的处理结果测量值;模型方程生成单元，用于从保存的感测数据和处理结果测量值生成模型方程;模型方程式存储单元，用于保存生成的模型方程;基于模型方程预测单元，用于从保存的模型方程和感测数据预测处理结果;以及处理配方控制单元，用于根据预测的处理结果控制处理装置的处理条件。

38. 发明申请

US20060199288A1 Data processing apparatus for semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译：通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

39. 发明授权

US07010374B2 Method for controlling semiconductor processing apparatus 有权
标题翻译：半导体处理装置的控制方法
公开(公告)号：US07010374B2
公开(公告)日：2006-03-07
申请号：US10377827
申请日：2003-03-04
申请人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： A method for controlling a semiconductor processing apparatus including a vacuum processing chamber, a plasma apparatus for generating plasma inside the vacuum processing chamber, and a process controller for controlling a process by holding a process recipe including plasma cleaning of inside of the vacuum processing chamber constant, comprises the steps of detecting process abnormality of the process on the basis of sensor data detected by sensors arranged in the semiconductor processing apparatus, and executing a recovery step for removing deposition deposited inside the vacuum processing chamber when abnormality is detected.
摘要翻译：一种用于控制包括真空处理室的真空处理室，用于在真空处理室内产生等离子体的等离子体装置的半导体处理装置的方法，以及用于通过保持包括真空处理室内部的等离子体清洗常数的处理配方来控制处理的处理控制器包括以下步骤：根据布置在半导体处理装置中的传感器检测到的传感器数据来检测处理异常，并且当检测到异常时，执行用于去除沉积在真空处理室内的沉积物的恢复步骤。

40. 发明授权

US06881352B2 Disturbance-free, recipe-controlled plasma processing method 有权
标题翻译：无干扰，配方控制等离子体处理方法
公开(公告)号：US06881352B2
公开(公告)日：2005-04-19
申请号：US10350061
申请日：2003-01-24
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H05H1/00 , B01J19/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.
摘要翻译：一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果成为目标值。基于由最佳配方计算模型生成的配方来控制等离子体处理器。

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