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    • 32. 发明申请
    • Light emitting device and manufacturing method therefor
    • 发光元件及其制造方法
    • US20050236969A1
    • 2005-10-27
    • US10992854
    • 2004-11-22
    • Satoshi SeoHiroko Yamazaki
    • Satoshi SeoHiroko Yamazaki
    • H05B33/26H01L51/00H01L51/50H05B33/00
    • H01L51/5092H01L51/0035H01L51/0051H01L51/0059H01L51/0078H01L51/0081H01L51/5088H01L2251/5315
    • To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).
    • 提供一种具有顶部发射结构的发光元件及其制造方法,其可以容易地制造而不考虑电极(特别是与基板接触的电极)的电离电位。 根据本发明的具有顶部发射结构的发光器件包括:由具有遮光性或反射率的通用金属(具体地,诸如Ti或Al的布线材料)形成的第一电极(101) 通过将导电聚合物材料施加到所述第一电极(101)上形成的导电聚合物层(102); 形成为与导电聚合物层(102)接触的电致发光膜(103); 以及形成在电致发光膜103上的透光性第二电极(104),其中导电性聚合物层(102)由包含氧化还原性聚合物等的材料形成,同时没有关于功函数的问题(如图 1 A)。