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    • 34. 发明授权
    • Protection circuit for discharging large amount of static charge current
through field effect transistors different in break-down voltage
    • 保护电路通过场效应晶体管不同的击穿电压放电大量静态充电电流
    • US6094332A
    • 2000-07-25
    • US148784
    • 1998-09-04
    • Kenichiro Takahashi
    • Kenichiro Takahashi
    • H01L27/04H01L21/822H01L21/8238H01L27/02H01L27/092H02H3/22
    • H01L27/0251
    • A protection circuit has a series combination of a p-channel enhancement type field effect transistor, a first node and a first resistor connected between a high voltage line and a low voltage line and a series combination of a second resistor, a second node and an n-channel enhancement type field effect transistor also connected between the high voltage line and the low voltage line, and the first node and the second node are respectively connected to the gate electrode of the n-channel enhancement type field effect transistor and the gate electrode of the p-channel enhancement type field effect transistor; when one of the field effect transistors is broken down between the source node and the drain node due to abnormal voltage applied between the high voltage line and the low voltage line, the associated resistor varies the potential level at the gate electrode of the other of the field effect transistors due to the break-down current passing therethrough, and causes the other of the field effect transistors to turn on so as to increase the current discharging capability of the protection circuit.
    • 保护电路具有p沟道增强型场效应晶体管,第一节点和连接在高电压线与低电压线之间的第一电阻和第二电阻,第二节点和第二电阻的串联组合的串联组合 n沟道增强型场效应晶体管也连接在高压线和低电压线之间,第一节点和第二节点分别连接到n沟道增强型场效应晶体管的栅电极和栅电极 的p沟道增强型场效应晶体管; 当源极节点和漏极节点之间的一个场效应晶体管由于在高电压线路和低电压线路之间施加的异常电压而分解时,相关电阻器改变另一个的栅电极的电位电平 场效应晶体管由于分解电流通过,导致另一个场效应晶体管导通,从而增加了保护电路的电流放电能力。