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    • 33. 发明授权
    • Automatic developing machine for silver halide photographic
light-sensitive materials
    • 卤化银照相感光材料自动显影机
    • US5351103A
    • 1994-09-27
    • US940945
    • 1992-10-27
    • Yoshimasa KomatsuShigeharu KoboshiMasao Ishikawa
    • Yoshimasa KomatsuShigeharu KoboshiMasao Ishikawa
    • G03C5/26G03C7/413G03D3/06G03D3/02
    • G03D3/065G03C5/265G03C7/4136
    • A compact automatic developing machine for silver halide photographic light-sensitive materials with improved operability which makes it easy to reduce the replenishing rate and which offers stable photographic performance, comprises at least one processing tank for containing a processing solution for processing an exposed silver halide photographic light-sensitive material. A solid processing agent is stocked and supplied to the processing tank, information on the amount of processing of the silver halide photographic light-sensitive materials is detected, and the supply of the solid processing agent is controlled according to the detected information on the amount of processing of the silver halide photographic light-sensitive material. The solid processing agent is preferably in the form of tablets which contain all components necessary to process the light-sensitive silver halide photographic material.
    • PCT No.PCT / JP92 / 00566 Sec。 371日期:1992年10月27日 102(e)日期1992年10月27日PCT提交1992年4月30日PCT公布。 WO92 / 20013 PCT出版物 日期:1992年12月11日。一种用于卤化银照相感光材料的紧凑型自动显影机,具有改进的可操作性,这使得容易降低补充速率并提供稳定的照相性能,包括至少一个用于容纳处理溶液的处理槽 用于处理暴露的卤化银照相感光材料。 将固体处理剂储存并供应到处理槽中,检测关于卤化银照相感光材料的处理量的信息,并根据检测到的关于量的化合物的量的信息来控制固体处理剂的供应 处理卤化银照相感光材料。 固体处理剂优选为含有处理感光卤化银照相材料所需的所有组分的片剂形式。
    • 40. 发明授权
    • Method for processing semiconductor structure and device based on the same
    • 用于处理半导体结构的方法和基于此的器件
    • US08138097B1
    • 2012-03-20
    • US12886106
    • 2010-09-20
    • Atsunobu IsobayashiMasao Ishikawa
    • Atsunobu IsobayashiMasao Ishikawa
    • H01L21/302H01L21/461
    • H01L21/31144H01L21/0332H01L21/0337
    • Methods for fabricating a device and related device structures are provided herein. According to one embodiment, a method for fabricating a device includes the acts of producing a substrate; forming a structure on the substrate having a lower dielectric layer, a metal layer, an upper dielectric layer, a planarizing layer, and a layer of photoresist material; developing the photoresist material according to a mask pattern; etching the planarizing layer and the upper dielectric layer according to the mask pattern; removing the photoresist material and the planarizing layer upon etching of the planarizing layer and the upper dielectric layer; applying a selective metal growth or metal/organic film to respective exposed portions of the metal layer following etching of the upper dielectric layer, thereby obtaining an inverted mask pattern; and etching at least the metal layer and the lower dielectric layer according to the inverted mask pattern.
    • 本文提供了制造器件和相关器件结构的方法。 根据一个实施例,一种用于制造器件的方法包括制造衬底的动作; 在具有下电介质层,金属层,上电介质层,平坦化层和光致抗蚀剂材料层的衬底上形成结构; 根据掩模图案显影光致抗蚀剂材料; 根据掩模图案蚀刻平坦化层和上介电层; 在蚀刻平坦化层和上介电层时去除光致抗蚀剂材料和平坦化层; 在蚀刻上介电层之后,在金属层的各露出部分上施加选择性金属生长或金属/有机膜,从而获得反向掩模图案; 并且根据倒置的掩模图案至少蚀刻金属层和下介电层。