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31. 发明授权

US06774989B1 Interlayer dielectric void detection 失效
标题翻译：层间电介质空隙检测
公开(公告)号：US06774989B1
公开(公告)日：2004-08-10
申请号：US10050453
申请日：2002-01-16
申请人： Bharath Rangarajan , Michael K. Templeton , Arvind Halliyal , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Arvind Halliyal , Bhanwar Singh
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/47
摘要： A system for detecting voids in an ILD layer is provided. The system includes one or more light sources, each light source directing light to respective portions of the ILD layer. Light reflected from the respective portions is collected by a measuring system that processes the collected light. The collected light is indicative of the presence of voids in the respective portions of the ILD layer. The measuring system provides ILD layer void related data to a processor that determines whether voids exist in the respective portions of the ILD layer. The processor selectively marks the ILD layer portions to facilitate further processing and/or destruction of the IC with the ILD layer voids.
摘要翻译：提供一种用于检测ILD层中的空隙的系统。该系统包括一个或多个光源，每个光源将光引导到ILD层的相应部分。通过处理收集的光的测量系统收集从各个部分反射的光。收集的光指示在ILD层的各个部分中存在空隙。测量系统向处理器提供ILD层空隙相关数据，该处理器确定在ILD层的相应部分中是否存在空隙。处理器选择性地标记ILD层部分以促进具有ILD层空隙的IC的进一步处理和/或破坏。

32. 发明授权

US06771374B1 Scatterometry based measurements of a rotating substrate 有权
标题翻译：旋转基板的基于散射法的测量
公开(公告)号：US06771374B1
公开(公告)日：2004-08-03
申请号：US10050758
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Ramkumar Subramanian
IPC分类号： G01N2155
CPC分类号： G01N21/211 , G01B11/0675 , G01N21/4738 , G01N21/9501 , Y10T428/21
摘要： A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.
摘要翻译：公开了一种用于监测旋转衬底的特性的系统和方法。当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。

33. 发明授权

US06649426B2 System and method for active control of spacer deposition 有权
标题翻译：用于主动控制间隔物沉积的系统和方法
公开(公告)号：US06649426B2
公开(公告)日：2003-11-18
申请号：US09893824
申请日：2001-06-28
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G01R3126
CPC分类号： H01L22/26 , H01L22/12
摘要： The present invention relates to systems and methods to regulate spacer deposition. The present invention employs a spacer deposition controller to control a spacer deposition component that deposits a spacer on a portion of a wafer. During and/or after spacer deposition, light can be directed at the spacer, wherein light reflected from the spacer is measured to determine parameters associated with the spacer deposition process. A processor operatively coupled to a measurement system and the spacer deposition controller utilizes the parameters to determine if the spacer process is proceeding in a suitable manner via comparing the measured parameters with stored acceptable parameters. If it is determined that the spacer deposition process is not proceeding as desired, then the measured parameters can be employed by the spacer deposition controller to adjust the spacer deposition process on the portion of the wafer and on subsequent portions of wafers.
摘要翻译：本发明涉及调节间隔物沉积的系统和方法。本发明使用间隔物沉积控制器来控制将间隔物沉积在晶片的一部分上的间隔物沉积组分。在间隔物沉积期间和/或之后，可以将光引向间隔物，其中测量从间隔物反射的光以确定与间隔物沉积过程相关的参数。可操作地耦合到测量系统的处理器和间隔物沉积控制器利用参数来确定间隔物过程是否以适当的方式通过将测量的参数与存储的可接受参数进行比较来进行。如果确定间隔物沉积过程没有按需要进行，则可以通过间隔物沉积控制器来采用测量的参数来调整晶片部分和晶片的后续部分上的间隔物沉积过程。

34. 发明授权

US06905950B2 Growing copper vias or lines within a patterned resist using a copper seed layer 有权
标题翻译：使用铜种子层在图案化抗蚀剂中生长铜通孔或线
公开(公告)号：US06905950B2
公开(公告)日：2005-06-14
申请号：US09893198
申请日：2001-06-27
申请人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
发明人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： H01L21/76885 , H01L21/76879
摘要： The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown within the openings in a patterned coating. The patterned coating can be a resist coating or a dielectric coating. Either type of coating can be formed over a copper seed layer, whereby the seed layer is exposed within the pattern gaps. The copper seed layer can also be provided within the pattern gaps after patterning. Copper features are grown within the pattern gaps by plating. Where the patterned coating is a resist, the resist is stripped leaving the copper features in the inverse pattern image. The copper features can be coated with a diffusion barrier layer and a dielectric. The dielectric is polished to leave the dielectric filling the spaces between copper features. The invention provides copper lines and vias without the need for a dielectric or metal etching step. Another benefit of the invention is that lines widths can be increased by trimming the patterned coating prior to growing the copper features.
摘要翻译：本发明涉及制造互连线和通孔的方法。根据本发明，铜在图案化涂层的开口内生长。图案化的涂层可以是抗蚀剂涂层或介电涂层。任何一种类型的涂层可以在铜籽晶层上形成，从而种子层在图案间隙内露出。图案化之后也可以在图案间隙内提供铜籽晶层。铜特征通过电镀在图案间隙内生长。在图案涂层是抗蚀剂的情况下，剥离抗蚀剂，留下逆向图案图案中的铜特征。铜的特征可以涂覆有扩散阻挡层和电介质。电介质被抛光以留下电介质填充铜特征之间的空间。本发明提供铜线和通孔，而不需要电介质或金属蚀刻步骤。本发明的另一个好处是通过在生长铜特征之前修整图案化涂层可以增加线宽。

35. 发明授权

US06879051B1 Systems and methods to determine seed layer thickness of trench sidewalls 失效
标题翻译：确定沟槽侧壁种子层厚度的系统和方法
公开(公告)号：US06879051B1
公开(公告)日：2005-04-12
申请号：US10050454
申请日：2002-01-16
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： C23C16/04 , C23C16/52 , H01L21/31
CPC分类号： C23C16/045 , C23C16/52
摘要： One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.
摘要翻译：本发明的一个方面涉及一种促进在衬底中形成的沟槽的侧壁表面上形成种子层部分的方法。该方法包括以下步骤：在与沟槽共形设置的阻挡层上形成保形种子层，其中沟槽形成在衬底中; 在种子层侧壁部分反射x射线辐射的光束; 基于所述光束的反射部分生成测量信号; 以及当在所述沟槽上形成所述侧壁部分时，基于所述测量信号来确定所述侧壁部分的厚度。

36. 发明授权

US06704101B1 Scatterometry based measurements of a moving substrate 失效
标题翻译：移动基板的基于散射法的测量
公开(公告)号：US06704101B1
公开(公告)日：2004-03-09
申请号：US10050423
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
IPC分类号： G01N2100
CPC分类号： G01N21/47 , G01N21/4788 , G01N21/55 , G01N21/9501 , G01N2201/10
摘要： A system and method are disclosed for monitoring characteristics of a substrate. A substrate is supported for movement within a processing environment and an incident light beam is emitted onto a surface of the substrate. The incident beam is provided to a moveable reflector that directs the beam to the substrate. A control system controls movement of the reflector so as to selectively interrogates the substrate with the beam.
摘要翻译：公开了用于监测基板的特性的系统和方法。支撑衬底在处理环境中移动，并且将入射光束发射到衬底的表面上。入射光束被提供到将光束引导到衬底的可移动反射器。控制系统控制反射器的运动，以便选择性地用光束询问衬底。

37. 发明授权

US06650422B2 Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith 有权
标题翻译：散射技术来确定特征的不对称轮廓，并产生与之相关联的反馈或前馈过程控制数据
公开(公告)号：US06650422B2
公开(公告)日：2003-11-18
申请号：US09817820
申请日：2001-03-26
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01B1100
CPC分类号： G01B11/30 , G01B11/24 , G01B11/26 , G01N21/211 , G01N21/4738 , G01N21/9501
摘要： The present invention is directed to a method and a system for non-destructively, efficiently and accurately detecting asymmetry in the profile of a feature formed on a wafer during the process of semiconductor fabrication. The method encompasses directing a beam of light or radiation at a feature and detecting a reflected beam associated therewith. Data associated with the reflected beam is correlated with data associated with known feature profiles to ascertain profile characteristics associated with the feature of interest. Using the profile characteristics, an asymmetry of the feature is determined which is then used to generate feedback or feedforward process control data to compensate for or correct such asymmetry in subsequent processing.
摘要翻译：本发明涉及一种用于在半导体制造过程中非破坏性地，有效地和准确地检测在晶片上形成的特征的轮廓的不对称性的方法和系统。该方法包括在特征处引导光束或辐射，并且检测与其相关联的反射光束。与反射光束相关联的数据与与已知特征轮廓相关联的数据相关联，以确定与感兴趣特征相关联的轮廓特征。使用简档特征，确定特征的不对称性，然后将其用于产生反馈或前馈过程控制数据，以补偿或纠正随后处理中的这种不对称性。

38. 发明授权

US06645702B1 Treat resist surface to prevent pattern collapse 失效
标题翻译：处理抗蚀剂表面以防止图案塌陷
公开(公告)号：US06645702B1
公开(公告)日：2003-11-11
申请号：US10050438
申请日：2002-01-16
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution.
摘要翻译：本发明涉及增加图案化抗蚀剂疏水性的系统和方法。在一个实施例中，本发明涉及一种处理超薄抗蚀剂的方法，包括在半导体衬底上沉积超薄光致抗蚀剂; 用电磁辐射照射超薄抗蚀剂; 用显影剂显影超薄抗蚀剂以形成图案化抗蚀剂，图案化抗蚀剂具有第一疏水性表面; 使图案化的抗蚀剂与过渡溶剂接触以提供具有第二疏水性的图案化抗蚀剂的表面，其中第二疏水性大于第一疏水性，并且图案化的抗蚀剂与转变的接触在显影超薄抗蚀剂和冲洗图案抗蚀剂; 并用水溶液冲洗具有第二疏水性的图案化抗蚀剂。

39. 发明授权

US06561706B2 Critical dimension monitoring from latent image 有权
公开(公告)号：US06561706B2
公开(公告)日：2003-05-13
申请号：US09893807
申请日：2001-06-28
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03D500
CPC分类号： G03F7/70633 , G03F7/70675
摘要： A system for monitoring a latent image exposed in a photo resist during semiconductor manufacture is provided. The system includes one or more light sources, each light source directing light to the latent image and/or one or more gratings exposed on one or more portions of a wafer. Light reflected from the latent image and/or the gratings is collected by a signature system, which processes the collected light. Light passing through the latent image and/or gratings may similarly be collected by the signature system, which processes the collected light. The collected light is analyzed and can be employed to generate feedback information to control the exposure. The collect light is further analyzed and can be employed to generate feed forward information that can be employed to control post exposure processes including development and baking processes.

40. 发明授权

US06535288B1 Machine readable code to trigger data collection 有权
标题翻译：触发数据采集的机器可读代码
公开(公告)号：US06535288B1
公开(公告)日：2003-03-18
申请号：US09902351
申请日：2001-07-10
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Khoi A. Phan
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Khoi A. Phan
IPC分类号： G01N2189
CPC分类号： H01L21/67253 , C23C14/547 , C23C16/52 , G01N21/47 , G01N21/9501 , H01L22/26
摘要： The present invention is directed to a system and a method for controlling a thin film formation on a moving substrate as part of a process for manufacturing an integrated circuit. The invention involves the use of scatterometry to control the thin film formation process by analyzing the thin film on the moving substrate comprising an optical indicia and a periodic analysis structure in a periodic manner. The optical indicia is spatially associated with the periodic analysis structure and is utilized in conjunction with a signaling system to determine a position of the moving substrate, whereby a repeatable analysis of a corresponding location on the moving substrate can be performed. Scatterometry permits in-situ measurements of thin film formation progress, whereby thin film formation process conditions can be controlled in a feedback loop to obtain a targeted result. Scatterometry can also be facilitated by providing a grating pattern on a non-production portion of the substrate.
摘要翻译：本发明涉及一种用于控制移动衬底上的薄膜形成的系统和方法，作为用于制造集成电路的工艺的一部分。本发明涉及使用散射法来通过以周期性方式分析包括光学标记和周期性分析结构的移动衬底上的薄膜来控制薄膜形成过程。光学标记在空间上与周期性分析结构相关联，并且与信号系统结合使用以确定移动的衬底的位置，由此可以执行移动衬底上相应位置的可重复分析。散射测量允许原位测量薄膜形成进程，由此可以在反馈回路中控制薄膜形成工艺条件以获得目标结果。也可以通过在基板的非生产部分上提供光栅图案来促进散射测量。

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