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31. 发明授权

US4418177A Thermosetting adhesive compositions and use 失效
标题翻译：热固性粘合剂组合物和用途
公开(公告)号：US4418177A
公开(公告)日：1983-11-29
申请号：US341700
申请日：1982-01-22
申请人： Fumihiro Doura , Masamitsu Nakabayashi , Taiji Morimoto
发明人： Fumihiro Doura , Masamitsu Nakabayashi , Taiji Morimoto
IPC分类号： C09J129/04 , C09J123/08 , C09J163/00 , C08L23/26
CPC分类号： C09J163/00 , C09J123/08
摘要： A thermosetting adhesive composition is disclosed which contains (a) a half-ester product of a saponified ethylene/vinyl ester copolymer with a dicarboxylic acid and (b) a solid or liquid epoxy resin, and this composition may further optionally contain a compound bearing two or more carboxyl groups, which is useful as a structural adhesive. The composition has a good storage stability and a good solubility to solvents, and can be cured at relatively low temperature in a shortened time. After curing, the composition shows good heat-resistance and has good adhesive properties.
摘要翻译：公开了一种热固性粘合剂组合物，其包含（a）皂化的乙烯/乙烯基酯共聚物与二羧酸的半酯产物和（b）固体或液体环氧树脂，并且该组合物还可任选地含有带有两个或更多的羧基，其可用作结构粘合剂。该组合物具有良好的储存稳定性和对溶剂的良好溶解性，并且可以在较短的时间内在较低的温度下固化。固化后，该组合物显示出良好的耐热性，并具有良好的粘合性。

32. 发明授权

US07872418B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07872418B2
公开(公告)日：2011-01-18
申请号：US12051602
申请日：2008-03-19
申请人： Toshio Hata , Masahiro Konishi , Makoto Agatani , Taiji Morimoto
发明人： Toshio Hata , Masahiro Konishi , Makoto Agatani , Taiji Morimoto
IPC分类号： H01L33/00
CPC分类号： H01B1/10 , F21K9/232 , F21Y2115/10 , H01L24/45 , H01L24/73 , H01L25/0753 , H01L33/50 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01015 , H01L2924/0102 , H01L2924/01047 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： By using a light emitting device including a substrate and a light emitting unit, the light emitting unit including: a plurality of light emitting elements that are mounted on substrate and electrically connected to external electrodes; a first sealing member layer containing a first fluorescent material, formed to cover light emitting elements; and a second sealing member layer containing a second fluorescent material, formed on first sealing member layer, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device capable of suppressing color shifts and the like by the fluorescent materials, and of being easily manufactured, as well as a method for manufacturing the same.
摘要翻译：通过使用包括基板和发光单元的发光装置，所述发光单元包括：多个发光元件，其安装在基板上并电连接到外部电极; 包含形成为覆盖发光元件的第一荧光材料的第一密封元件层; 以及形成在第一密封部件层上的包含第二荧光材料的第二密封部件层及其制造方法，能够提供能够抑制荧光材料的色移等的发光元件，并且易于制造，以及其制造方法。

33. 发明申请

US20090168406A1 PLANAR LIGHT SOURCE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：平面光源，显示装置及其制造方法
公开(公告)号：US20090168406A1
公开(公告)日：2009-07-02
申请号：US12335916
申请日：2008-12-16
申请人： Osamu KAWASAKI , Taiji Morimoto , Masanori Watanabe
发明人： Osamu KAWASAKI , Taiji Morimoto , Masanori Watanabe
IPC分类号： G02F1/13357 , H01J61/00 , H01J9/42
CPC分类号： G02F1/133603 , G02F1/133609 , G02F1/133611
摘要： Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances d2 at which two of the light-emitting elements in each of the pairs are provided are less than distances d1 at which the pairs are provided.
摘要翻译：发光元件根据其色度分为色度组。在平面光源中，从两个色度组中选出的发光元件分别在纵向方向和横向上交替地设置。两个色度组在彼此相反的方向上基本上等于远离目标色度。此外，属于彼此分离的两个色度组的两个发光元件的成对被设置成使得设置有每对中的两个发光元件的距离d2小于距离设置成对的d1。

34. 发明申请

US20080029779A1 Injection apparatus, semiconductor light emitting apparatus, manufacturing apparatus, and manufacturing method of semiconductor light emitting apparatus 有权
标题翻译：注射装置，半导体发光装置，制造装置和半导体发光装置的制造方法
公开(公告)号：US20080029779A1
公开(公告)日：2008-02-07
申请号：US11882598
申请日：2007-08-02
申请人： Toshio Hata , Hideaki Tatsuta , Hiromu Tagashira , Taiji Morimoto
发明人： Toshio Hata , Hideaki Tatsuta , Hiromu Tagashira , Taiji Morimoto
IPC分类号： H01L33/00 , B05C9/00 , H01L21/02
CPC分类号： B29C45/02 , B29C45/14655 , B29K2995/0018 , B41F15/12 , B41F15/40 , H01L33/20 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2933/0041 , H01L2924/00 , H01L2924/00014
摘要： A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.
摘要翻译：本发明的含荧光材料注入装置包括含荧光的材料温度控制部分，含荧光材料搅拌部分，含荧光物质剩余量传感器和含荧光物质注入量调节部分，由抑制含荧光材料M中污染物的混合比例的不均衡。这使得可以将含荧光的材料均匀地施加到半导体发光元件上。

35. 发明申请

US20070284994A1 Light emitting apparatus, display apparatus and method for controlling light emitting apparatus 有权
标题翻译：发光装置，显示装置及控制发光装置的方法
公开(公告)号：US20070284994A1
公开(公告)日：2007-12-13
申请号：US11802997
申请日：2007-05-29
申请人： Taiji Morimoto , Masanori Watanabe
发明人： Taiji Morimoto , Masanori Watanabe
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7721 , C09K11/7734 , C09K11/7774 , H01L25/0753 , H01L33/50 , H01L2924/0002 , H05B33/0857 , H01L2924/00
摘要： In a light emitting apparatus using LEDs, luminance and chromaticity of the LED changes largely due to a temperature change. Meanwhile, by using phosphors, it is possible to improve the stability of the luminance and chromaticity against the temperature change. However, color reproducibility of the light emitting apparatus decreases. Therefore, the light emitting apparatus includes a first LED, a second LED, a first phosphor which is excited by the second LED and emits light whose color is the same as or similar to a color of light emitted from the first LED, and a control circuit which controls a ratio between an emission intensity of the first LED and an emission intensity of the second LED.
摘要翻译：在使用LED的发光装置中，由于温度变化，LED的亮度和色度变化很大。同时，通过使用荧光体，可以提高亮度和色度对温度变化的稳定性。然而，发光装置的色彩再现性降低。因此，发光装置包括第一LED，第二LED，由第二LED激发的第一荧光体，并且发射其颜色与从第一LED发射的光的颜色相同或相似的光，以及控制电路，其控制第一LED的发光强度和第二LED的发光强度之间的比率。

36. 发明申请

US20050271108A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20050271108A1
公开(公告)日：2005-12-08
申请号：US11138382
申请日：2005-05-27
申请人： Kazuhiko Wada , Keisuke Miyazaki , Taiji Morimoto , Masaki Tatsumi , Yoshiaki Ueda
发明人： Kazuhiko Wada , Keisuke Miyazaki , Taiji Morimoto , Masaki Tatsumi , Yoshiaki Ueda
IPC分类号： H01S5/22 , G11B7/125 , H01S5/00 , H01S5/223 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , G11B7/1275 , H01S5/2206 , H01S5/2231 , H01S5/3432 , H01S5/34326 , H01S5/4031 , H01S5/4087 , H01S2301/173 , H01S2304/04
摘要： A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlxGa1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlGaInP second upper cladding layer is identical to a ratio of an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlxGa1-xAs (X=0.550) second cladding layer to an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlGaInP second upper cladding layer.
摘要翻译：一种半导体激光器的制造方法，其中通过将p型GaAs覆盖层的层厚度相加而得到的层厚度与p型Al <！ - SIPO - > Ga

37. 发明授权

US06969873B2 Nitride gallium compound semiconductor light emission device 有权
标题翻译：氮化镓化合物半导体发光器件
公开(公告)号：US06969873B2
公开(公告)日：2005-11-29
申请号：US09775838
申请日：2001-02-01
申请人： Toshio Hata , Kensaku Yamamoto , Taiji Morimoto
发明人： Toshio Hata , Kensaku Yamamoto , Taiji Morimoto
IPC分类号： H01L33/12 , H01L33/32 , H01L33/34 , H01L33/42 , H01L33/62 , H01L29/22
CPC分类号： H01L33/42 , H01L24/05 , H01L24/32 , H01L33/20 , H01L33/32 , H01L33/385 , H01L2224/04042 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2224/49107 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/3025 , H01L2924/00
摘要： A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.
摘要翻译：氮化镓化合物半导体发光器件包括：衬底; 包括n型透射电极的n型电极区域; 包括有源层的氮化镓化合物半导体多层结构; 以及包括p型透射电极的p型电极区域。 p型透射电极和n型透射电极透射在有源层中产生并从衬底反射的光，使得光离开发光器件。

38. 发明授权

US06603146B1 Gallium nitride group compound semiconductor light-emitting device 有权
标题翻译：氮化镓族化合物半导体发光元件
公开(公告)号：US06603146B1
公开(公告)日：2003-08-05
申请号：US09684279
申请日：2000-10-06
申请人： Toshio Hata , Taiji Morimoto , Takeshi Kamikawa , Kensaku Yamamoto
发明人： Toshio Hata , Taiji Morimoto , Takeshi Kamikawa , Kensaku Yamamoto
IPC分类号： H01L2715
CPC分类号： H01L33/44 , H01L33/42 , H01L33/507 , H01L33/508 , H01L2224/45144 , H01L2224/48463 , H01L2224/49107 , H01L2224/8592 , Y10S257/918 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.
摘要翻译：一种半导体发光器件包括：衬底; 包括至少一个发光区域的半导体层; 具有透光特性的金属层; 用于将从发光区域发射的第一光的至少一部分转换成具有与第一光不同的波长的第二光的第一荧光材料层; 以及形成在金属层和第一荧光体层之间并具有透光特性的氧化物半导体层。

39. 发明授权

US4879725A Semiconductor laser device having extended facet life 失效
标题翻译：具有延长刻面寿命的半导体激光器件
公开(公告)号：US4879725A
公开(公告)日：1989-11-07
申请号：US238728
申请日：1988-08-30
申请人： Hidenori Kawanishi , Masahiro Yamaguchi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa
发明人： Hidenori Kawanishi , Masahiro Yamaguchi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa
IPC分类号： H01S5/00 , H01S5/16 , H01S5/24
CPC分类号： H01S5/16 , H01S5/24 , H01S5/168
摘要： A semiconductor laser device comprises a p-type semiconductor substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the active layer and a light-absorbing area positioned outside of the channeled area by which a difference between the amount of light to be absorbed inside of the channeled area and the amount of light to be absorbed outside of the channeled area is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the light-absorbing area is constituted by an n-type semiconductor substance, but a portion of the n-type semiconductor substance positioned in the vicinity of at least one of both facets is replaced by a p-type semiconductor substance.

40. 发明授权

US08604506B2 Surface mounting type light emitting diode and method for manufacturing the same 有权
标题翻译：表面安装型发光二极管及其制造方法
公开(公告)号：US08604506B2
公开(公告)日：2013-12-10
申请号：US12035216
申请日：2008-02-21
申请人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
发明人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/644 , H01L33/486 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014
摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.
摘要翻译：本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。表面安装型发光二极管包括金属基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，其具有热传导以夹持半导体发光元件。从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。金属反射器可以有效地将热量辐射到外部。为反射器提供的切割边缘有助于切割过程，从而提高生产率。

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