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31. 发明公开

EP2056339A1 METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权转让
标题翻译：一种用于生产III族氮化物半导体复合轻元素，III族氮化物半导体复合光成分和LIGHT
公开(公告)号：EP2056339A1
公开(公告)日：2009-05-06
申请号：EP07792537.8
申请日：2007-08-15
申请人： Showa Denko K.K.
发明人： MIKI, Hisayuki , HANAWA, Kenzo , SASAKI, Yasumasa
IPC分类号： H01L21/203 , C23C14/34 , H01L33/00
摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm 2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
摘要翻译：本发明提供一种具有高生产率和良好的发射特性，一种制造III族氮化物化合物半导体发光器件的方法，以及灯的III族氮化物化合物半导体发光器件。一种制造III族氮化物化合物半导体发光器件的方法包括：形成在基板11由III族氮化物化合物半导体，包括Ga作为使用溅射法的III族元素的半导体层的工序。基板11和溅射靶被布置成面对海誓山盟，以及基板11和溅射靶之间的间隙在20至100毫米的范围内。此外，当半导体层通过溅射法，超过0.1 W的偏压FORMED / cm 2的被施加到衬底11。此外，当半导体层被形成，氮气和氩气供给到用于室溅射。

32. 发明公开

EP2019437A1 III NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE 有权转让
标题翻译： LAMINIERTE III-NITRID-VERBUNDHALBLEITERSTRUKTUR
公开(公告)号：EP2019437A1
公开(公告)日：2009-01-28
申请号：EP07743255.7
申请日：2007-05-08
申请人： Showa Denko K.K.
发明人： MIKI, Hisayuki , SAKAI, Hiromitsu , HANAWA, Kenzo , YOKOYAMA, Yasunori , SASAKI, Yasumasa , KAJI, Hiroaki
IPC分类号： H01L33/00 , C23C14/06 , C23C14/34 , C23C16/02 , C23C16/34 , H01L21/203 , H01L21/205
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.
The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×10 3 to 1×10 5 crystals/µm 2 .
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3至1×10 5晶体/μm2。

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