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31. 发明专利

GB2467161A Nitride nanoparticles 未知
公开(公告)号：GB2467161A
公开(公告)日：2010-07-28
申请号：GB0901225
申请日：2009-01-26
申请人： SHARP KK
发明人： TAYLOR PETER NEIL , HEFFERNAN JONATHAN
IPC分类号： C01B21/06 , C01G15/00 , C09K11/62 , C30B29/40
摘要： The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal, and an electron-donating group for passivating metal, boron or silicon at the surface of the crystal. Preferably, the nitride crystal is indium nitride and the capping agent is a zinc carboxylate. The invention also provides non-emissive nitride nanoparticles.

32. 发明专利

GB2462108A Deposition of a thin film on a nanostructured surface 未知
公开(公告)号：GB2462108A
公开(公告)日：2010-01-27
申请号：GB0813568
申请日：2008-07-24
申请人： SHARP KK
发明人： LANG CHRISTIAN , HUANG YING JUN JAMES , ALTEBAEUMER THOMAS HEINZ-HELMUT , DAY STEPHEN , HEFFERNAN JONATHAN
IPC分类号： H01L31/0352 , H01L21/20
摘要： A method of growing solar cell thin films conformally on a nanostructured surface of a substrate where the thickness of the conformal layer or layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer compared to the growth rate over a planar substrate. The length h of the nanostructures satisfies the relationship xh>=d where x is the degree of conformality of the thin film and d is the minimum thickness required to fill the volume between the nanostructures. A further set of nanostructures 9 may be interlaced with the nanostructures 5a on the substrate surface and which can be used as electrodes in a photovoltaic device structure - see figure 12(a).

33. 发明专利

DE602004002506D1 未知
公开(公告)号：DE602004002506D1
公开(公告)日：2006-11-09
申请号：DE602004002506
申请日：2004-04-02
申请人： SHARP KK
发明人： ROSHAN RAKESH , POOLE BRENDAN , HOOPER EDWARD , HEFFERNAN JONATHAN
IPC分类号： H01S5/065 , H01S5/22
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.

34. 发明专利

DE69734384T2 未知
公开(公告)号：DE69734384T2
公开(公告)日：2006-07-13
申请号：DE69734384
申请日：1997-12-19
申请人： SHARP KK
发明人： DUGGAN GEOFFREY , HEFFERNAN JONATHAN
IPC分类号： H01S5/00 , H01S5/32 , H01S5/183 , H01S5/20 , H01S5/34 , H01S5/343
摘要： A separate confinement heterostructure (SCH) laser device (LD) has a quantum well active region 10 within an optical guiding region 12, and n- and p-type cladding regions 14 and 16 on opposite sides of the guiding region 12. An electron-capture layer 36 is provided in the n-side guiding region 12a. The composition of the electron-capture layer 36 is such that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region 10 and/or the n-side guiding region 12a. The electron-capture layer 36 is thick enough to bind X-electrons so that, in use, the electron-capture layer 36 promotes the capture of X-electrons. The electron-capture layer 36 is sufficiently close to the active region 10 to permit transfer of captured X-electrons to at least one r-confined level in the active region 10.

35. 发明专利

DE69734384D1 未知
公开(公告)号：DE69734384D1
公开(公告)日：2005-11-24
申请号：DE69734384
申请日：1997-12-19
申请人： SHARP KK
发明人： DUGGAN GEOFFREY , HEFFERNAN JONATHAN
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343
摘要： A separate confinement heterostructure (SCH) laser device (LD) has a quantum well active region 10 within an optical guiding region 12, and n- and p-type cladding regions 14 and 16 on opposite sides of the guiding region 12. An electron-capture layer 36 is provided in the n-side guiding region 12a. The composition of the electron-capture layer 36 is such that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region 10 and/or the n-side guiding region 12a. The electron-capture layer 36 is thick enough to bind X-electrons so that, in use, the electron-capture layer 36 promotes the capture of X-electrons. The electron-capture layer 36 is sufficiently close to the active region 10 to permit transfer of captured X-electrons to at least one r-confined level in the active region 10.

36. 发明专利

GB2412234A Manufacture of a semiconductor light-emitting device 未知
公开(公告)号：GB2412234A
公开(公告)日：2005-09-21
申请号：GB0406109
申请日：2004-03-18
申请人： SHARP KK
发明人： JOHNSON KATHERINE LOUISE , HOOPER STEWART EDWARD , BOUSQUET VALERIE , KAUER MATTHIAS , HEFFERNAN JONATHAN
IPC分类号： H01L21/461 , H01L33/36 , H01L33/00
摘要： A method of manufacturing a semiconductor light-emitting device comprises depositing an electrically conductive material (11a,11b,11c) on one or more selected portions of the surface of a semiconductor wafer comprising a substrate (2) and a layer structure (4) having at least a first semiconductor layer (2) of a first conductivity type and a second semiconductor layer (3) of a second conductivity type different from the first conductivity type, the first layer (2) being between the second layer (3) and the substrate (1). The electrically conductive material forms a contact to the first semiconductor layer. The wafer is then diced to form a plurality of light-emitting devices (12), each light-emitting device having a respective part of the electrically conductive material.

37. 发明专利

GB2395839A MBE growth of p-type nitride semiconductor materials 未知
公开(公告)号：GB2395839A
公开(公告)日：2004-06-02
申请号：GB0228019
申请日：2002-11-30
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , BOUSQUET VALERIE , JOHNSON KATHERINE L , HEFFERNAN JONATHAN
IPC分类号： C30B23/02 , H01L21/203 , H01L21/205 , H01L21/20
摘要： A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminium is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 x 10 cm , without the need for any post-growth step of activating the dopant atoms.

38. 发明专利

GB2392170A MBE growth of a semiconductor layer structure 未知
公开(公告)号：GB2392170A
公开(公告)日：2004-02-25
申请号：GB0219729
申请日：2002-08-23
申请人： SHARP KK
发明人： BOUSQUET VALERIE , HOOPER STEWART EDWARD , BARNES JENNIFER MARY , HEFFERNAN JONATHAN
IPC分类号： C30B23/02 , H01L21/203 , H01L33/00 , C23C14/06 , C23C14/24 , C30B23/08 , H01L21/20
摘要： A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second substrate temperature (T2) which is lower then the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17). The method of the invention may be applied to the growth of a light-emitting device, for example such as an LED.

39. 发明专利

GB2372632A A method of growing an InGaN semiconductor layer 未知
公开(公告)号：GB2372632A
公开(公告)日：2002-08-28
申请号：GB0104598
申请日：2001-02-23
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , BARNES JENNIFER MARY , BOUSQUET VALERIE , HEFFERNAN JONATHAN
IPC分类号： C30B23/08 , C30B23/02 , C30B29/38 , H01L21/20 , H01L21/203
摘要： The invention provides a method of growing a layer of InGaN by molecular beam epitaxy. The InGaN layer is grown at a substrate temperature of at least 650{C to provide improved material quality. Ammonia gas is used as the source of nitrogen for the growth process. The invention also provides a method of growing an (In,Ga)N layer structure by supplying ammonia and gallium to the growth chamber at substantially constant rates. The supply rate of indium to the growth chamber is varied to select the desired composition for the layer being grown. Each (In,Ga)N layer is grown at a substrate temperature of at least 650{C. The substrate temperature is kept constant during the growth process to avoid the need to interrupt the growth process to vary the substrate temperature between the growth of one layer and the growth of another layer.

40. 发明专利

GB2358281A A method of manufacturing a semiconductor laser device 未知
公开(公告)号：GB2358281A
公开(公告)日：2001-07-18
申请号：GB0000519
申请日：2000-01-12
申请人： SHARP KK
发明人： HEFFERNAN JONATHAN
IPC分类号： H01S5/16 , H01S5/34
摘要： The method comprises growing a cap layer 20 containing a high concentration of crystallographic vacancies over a semiconductor wafer. The wafer is a semiconductor layer structure 14 that contains an active region 17 for laser oscillation. A material 15 for promoting quantum well intermixing such as SiO 2 is then deposited over selected portions of the wafer. The wafer is annealed to promote quantum well intermixing in selected portions of the active region, and is then cleaved so that the intermixed regions form non-absorbing minor facets of laser devices. The facet regions will have a greater band gap than the rest of the active region, and this will allow a higher power output before catastrophic optical damage occurs. Growing the cap layer with a high concentration of vacancies improves the efficiency of the intermixing process, and means that the annealing process can be shortened or carried out at a reduced temperature. A high concentration of vacancies in the cap layer 20 can be obtained by growing the cap layer under non-stoichiometric growth conditions.

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