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31. 发明授权

US07524606B2 Nanocomposite photoresist composition for imaging thick films 有权
标题翻译：用于成像厚膜的纳米复合光致抗蚀剂组合物
公开(公告)号：US07524606B2
公开(公告)日：2009-04-28
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
摘要翻译：本发明涉及适用于作为正性光致抗蚀剂的成像曝光和显影的光致抗蚀剂组合物，其包含正性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度大于5微米。正光致抗蚀剂组合物可以选自（1）包含（i）具有酸不稳定基团的成膜树脂和（ii）光酸产生剂的组合物的组合物，或（2）包含（i）成膜酚醛清漆树脂，和（ii）光活性化合物，或（3）包含（i）成膜树脂，（ii）光致酸发生剂和（iii）溶解抑制剂的组合物。

32. 发明申请

US20070141510A1 NANOCOMPOSITE PHOTOSENSITIVE COMPOSITION AND USE THEREOF 审中-公开
标题翻译：纳米复合光敏组合物及其用途
公开(公告)号：US20070141510A1
公开(公告)日：2007-06-21
申请号：US11627545
申请日：2007-01-26
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译：本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度大于5微米。负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂的组合物; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂

33. 发明申请

US20050234201A1 Process for making polyesters 有权
标题翻译：制作聚酯的方法
公开(公告)号：US20050234201A1
公开(公告)日：2005-10-20
申请号：US10817987
申请日：2004-04-05
申请人： Hengpeng Wu , Jianhui Shan , Shuji Ding-Lee , Zhong Xhiang , Eleazor Gonzalez , Mark Neisser
发明人： Hengpeng Wu , Jianhui Shan , Shuji Ding-Lee , Zhong Xhiang , Eleazor Gonzalez , Mark Neisser
IPC分类号： C08G63/12 , C08G63/46 , C08G63/50 , C08G63/81 , C08G63/91 , C08J7/04 , C08F20/00
CPC分类号： C08J7/047 , C08G63/46 , C08G63/916 , C08J2383/00 , C08J2467/00 , Y10T428/31504 , Y10T428/31786
摘要： The present invention relates to a process for making a polyester where a dianhydride is reacted with a diol. The resulting polyester can be further reacted with a compound selected from aromatic oxides, aliphatic oxides, alkylene carbonates, alcohols, and mixtures thereof.
摘要翻译：本发明涉及一种制备其中二酐与二醇反应的聚酯的方法。所得聚酯可以进一步与选自芳族氧化物，脂族氧化物，碳酸亚烷基酯，醇及其混合物的化合物反应。

34. 发明授权

US09040659B2 Methods and materials for removing metals in block copolymers 有权
标题翻译：用于去除嵌段共聚物中金属的方法和材料
公开(公告)号：US09040659B2
公开(公告)日：2015-05-26
申请号：US14175203
申请日：2014-02-07
申请人： Jian Yin , Hengpeng Wu , Muthiah Thiyagarajan , SungEun Hong , Mark Neisser , Yi Cao
发明人： Jian Yin , Hengpeng Wu , Muthiah Thiyagarajan , SungEun Hong , Mark Neisser , Yi Cao
IPC分类号： C08G64/00 , B05D5/00 , B01D15/36 , B01J45/00 , C08J3/00 , B01J39/04 , B01J41/04 , B05D1/00 , B05D3/00 , C08F6/02
CPC分类号： B05D5/00 , B01D15/361 , B01J39/05 , B01J41/07 , B01J45/00 , B05D1/005 , B05D3/00 , C08F6/02 , C08J3/00 , C08L53/00
摘要： The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
摘要翻译：本发明涉及一种处理嵌段共聚物溶液的方法，其中该方法包括：在非水溶剂中提供包含嵌段共聚物的溶液; 并使用离子交换树脂处理该溶液以除去金属。本发明还涉及使用经处理的嵌段共聚物形成图案的方法。

35. 发明申请

US20120202155A1 UNDERLAYER COATING COMPOSITION AND PROCESSES THEREOF 有权
标题翻译：底层涂料组合物及其工艺
公开(公告)号：US20120202155A1
公开(公告)日：2012-08-09
申请号：US13023291
申请日：2011-02-08
申请人： Huirong Yao , Zachary Bogusz , Guanyang Lin , Mark Neisser
发明人： Huirong Yao , Zachary Bogusz , Guanyang Lin , Mark Neisser
IPC分类号： G03F7/20 , C08L67/00 , C08L61/24 , C09D179/00 , C08L79/04
CPC分类号： G03F7/091 , C09D161/24 , G03F7/0046 , G03F7/11 , C08L67/00
摘要： The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.
摘要翻译：本发明涉及包含聚合物的底层涂料组合物，其中聚合物包含聚合物苯酚的主链中至少一个羟基芳族单元，其具有包含氟或碘部分的侧基和至少一个包含氨基塑料的单元。本发明还涉及使用该组合物形成图像的方法，特别是用于EUV。

36. 发明申请

US20100040838A1 Hardmask Process for Forming a Reverse Tone Image 审中-公开
标题翻译：形成反向色调图像的硬掩模处理
公开(公告)号：US20100040838A1
公开(公告)日：2010-02-18
申请号：US12192621
申请日：2008-08-15
申请人： David J. Abdallah , Ralph R. Dammel , Mark Neisser
发明人： David J. Abdallah , Ralph R. Dammel , Mark Neisser
IPC分类号： B44C1/22 , B32B5/00
CPC分类号： G03F7/40 , G03F7/0752 , H01L21/0273 , H01L21/0337 , H01L21/31055 , H01L21/31116 , H01L21/31138 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在基底上形成吸收性底层; b）在底层上形成正性光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）用硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的光致抗蚀剂图案; e）从硅涂层组合物在硬化的光致抗蚀剂图案上形成硅涂层; f）干蚀刻硅涂层以去除硅涂层，直到硅涂层具有与光致抗蚀剂图案大致相同的厚度; 并且g）干蚀刻以除去光致抗蚀剂和底层，从而在光致抗蚀剂图案的原始位置下形成沟槽。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

37. 发明申请

US20100015550A1 DUAL DAMASCENE VIA FILLING COMPOSITION 审中-公开
标题翻译：双组分通过填充组合物
公开(公告)号：US20100015550A1
公开(公告)日：2010-01-21
申请号：US12174718
申请日：2008-07-17
申请人： Weihong Liu , Guanyang Lin , Salem K. Mullen , Jian Yin , Mark Neisser
发明人： Weihong Liu , Guanyang Lin , Salem K. Mullen , Jian Yin , Mark Neisser
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/76808 , C08F212/08 , C08F220/14 , C08F220/26 , C08F220/32 , C08F222/14 , C08L33/068 , C08L63/00 , H01L21/312 , C08L2666/22
摘要： Compositions for use in dual damascene process are disclosed.
摘要翻译：公开了用于双镶嵌工艺的组合物。

38. 发明申请

US20060228644A1 Nanocomposite photoresist composition for imaging thick films 有权
公开(公告)号：US20060228644A1
公开(公告)日：2006-10-12
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.

39. 发明申请

US20060063105A1 Negative-working photoimageable bottom antireflective coating 审中-公开
公开(公告)号：US20060063105A1
公开(公告)日：2006-03-23
申请号：US11260761
申请日：2005-10-27
申请人： Joseph Oberlander , Ralph Dammel , Shuji Ding-Lee , Mark Neisser , Medhat Toukhy
发明人： Joseph Oberlander , Ralph Dammel , Shuji Ding-Lee , Mark Neisser , Medhat Toukhy
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/095 , G03F7/0382 , G03F7/091
摘要： The present invention relates to novel negative-working, photoimageable, and aqueous developable antireflective coating compositions and their use in image processing by forming a thin layer of the novel antireflective coating composition between a reflective substrate and a photoresist coating. The negative bottom photoimageable antireflective coating composition is capable of being developed in an alkaline developer and is coated below a negative photoresist.

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