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31. 发明授权

US06313039B1 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US06313039B1
公开(公告)日：2001-11-06
申请号：US09481050
申请日：2000-01-11
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.
摘要翻译：描述了包括浆料的化学机械抛光用组合物。提供足量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和电介质材料的差别去除的pH。组合物可以包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，以及过乙酸或高碘酸。描述了一种用于化学机械抛光的方法，其包括将包含该组合物的浆料施加到表面以产生金属和电介质材料的机械去除。

32. 发明授权

US06248704B1 Compositions for cleaning organic and plasma etched residues for semiconductors devices 有权
标题翻译：用于清洁半导体器件的有机和等离子体蚀刻残留物的组合物
公开(公告)号：US06248704B1
公开(公告)日：2001-06-19
申请号：US09304450
申请日：1999-05-03
申请人： Robert J. Small , Jun Cheng , Taishih Maw
发明人： Robert J. Small , Jun Cheng , Taishih Maw
IPC分类号： C23G5036
CPC分类号： H01L21/02071 , C11D3/43 , C11D7/3209 , C11D7/3218 , C11D7/3263 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , G03F7/425 , G03F7/426
摘要： A composition for the cleaning of residues from substrates from about 0.01 percent by weight to about 5 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an organic amide solvent and from 0 to about 50 weight percent of an organic sulfoxide solvent. The composition has a pH between about 7 and about 10. Additionally, the composition optionally contains corrosion inhibitors, chelating agents, surfactants, acids and bases. In use of the composition, a substrate is contacted with the composition for a time and at a temperature that permits cleaning of the substrate.
摘要翻译：一种用于从底物清洗残留物的组合物，其含量为约0.01重量％至约5重量％的一种或多种氟化物，约20重量％至约50重量％的水，约20重量％至约 80重量％的有机酰胺溶剂和0至约50重量％的有机亚砜溶剂。组合物的pH为约7至约10.另外，组合物任选地含有腐蚀抑制剂，螯合剂，表面活性剂，酸和碱。在使用该组合物时，使衬底与组合物接触一段时间并且允许清洁衬底的温度。

33. 发明授权

US6110881A Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials 失效
公开(公告)号：US6110881A
公开(公告)日：2000-08-29
申请号：US654007
申请日：1996-05-28
申请人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
IPC分类号： B24B37/04 , C09D9/00 , C11D3/20 , C11D3/30 , C11D3/34 , C11D3/43 , C11D7/26 , C11D7/32 , C11D7/34 , C11D7/50 , C11D11/00 , C23G1/10 , C23G1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D11/0047 , C11D11/0052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/425 , H01L21/02063 , H01L21/31133 , H01L21/76814 , H01L21/76885
摘要： A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

34. 发明授权

US5911835A Method of removing etching residue 失效
标题翻译：去除蚀刻残留物的方法
公开(公告)号：US5911835A
公开(公告)日：1999-06-15
申请号：US826257
申请日：1997-03-27
申请人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
发明人： Wai Mun Lee , Charles U. Pittman, Jr. , Robert J. Small
IPC分类号： B24B37/04 , C09D9/00 , C11D3/20 , C11D3/30 , C11D3/34 , C11D3/43 , C11D7/26 , C11D7/32 , C11D7/34 , C11D7/50 , C11D11/00 , C23G1/10 , C23G1/20 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768 , B08B3/08
CPC分类号： H01L21/02071 , B24B37/042 , C09D9/00 , C11D11/0047 , C11D11/0052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D7/5013 , C23G1/103 , C23G1/205 , G03F7/42 , G03F7/425 , H01L21/02063 , H01L21/31133 , H01L21/76814 , H01L21/76885
摘要： A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
摘要翻译： A（使用组合物的方法）用于除去抗蚀剂并从含有至少一种具有氧化和还原电位的亲核胺化合物的基材上蚀刻残留物，至少一种有机溶剂，水和任选的螯合剂。优选包含螯合剂，因为它为清洁组合物提供了增加的稳定性和活性，使得组合物具有长期有效性。如果不存在螯合剂，组合物在混合后初始使用组合物时提供足够的剥离和清洁，仅具有短期的稳定性。在后一种情况下，组合物的亲核胺化合物和有机溶剂组分优选彼此保持分开，直到期望使用该组合物。此后，组合组件。使用组合物后，组合物的未使用部分可以通过加入螯合剂来处理或再活化。

35. 发明授权

US08142675B2 Compositions for chemical-mechanical planarization of noble-metal-featured substrates, associated methods, and substrates produced by such methods 有权
标题翻译：用于贵金属特征基板的化学机械平面化的组合物，相关方法和由这些方法制备的基材
公开(公告)号：US08142675B2
公开(公告)日：2012-03-27
申请号：US12431172
申请日：2009-04-28
申请人： Robert J. Small , Zhefei J. Chen
发明人： Robert J. Small , Zhefei J. Chen
IPC分类号： B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00 , H01L28/60
摘要： A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4.A method for planarizing a substrate surface having a feature thereon comprising at least one noble metal, noble metal alloy, or noble metal oxide, or a combination thereof, comprises providing a composition or slurry comprising periodic acid and an abrasive in a combined amount sufficient to planarize the substrate surface, and polishing the surface with the slurry. A substrate produced by such a method is also provided.
摘要翻译：用于化学机械平面化的组合物包括高碘酸和研磨剂，其组合量足以使其上具有特征的基材表面平坦化，其中包含贵金属，贵金属合金，贵金属氧化物或其任何组合。在一个实施方案中，高碘酸的存在量为约0.05至约0.3摩尔/千克，磨料的存在量为约0.2至约6重量％。在另一个实施方案中，组合物还包含pH调节剂，其量足以使组合物的pH在约pH 5至约pH 10或约pH 1至约pH 4的范围内包括至少一种贵金属，贵金属合金或贵金属氧化物或其组合的其上具有其特征的基材表面的平面化方法包括提供组合物或浆料，所述组合物或浆料包含合成量足够的高碘酸和磨料平坦化基板表面，并用浆料抛光表面。还提供了通过这种方法制造的基板。

36. 发明授权

US08057696B2 Compositions and methods for rapidly removing overfilled substrates 失效
标题翻译：用于快速去除过度填充底物的组合物和方法
公开(公告)号：US08057696B2
公开(公告)日：2011-11-15
申请号：US12201459
申请日：2008-08-29
申请人： Philippe H. Chelle , Robert J. Small
发明人： Philippe H. Chelle , Robert J. Small
IPC分类号： C09G1/02
CPC分类号： H01L21/3212 , C09G1/02 , C23F1/18 , C23F3/06
摘要： This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.
摘要翻译：本发明涉及用于去除过度填充底物的组合物和方法，优选以相对高的去除速率。有利地，根据本发明的组合物可以含有氧化剂，优选的是每种类型的氧化剂，例如过氧化物，高碘酸和过乙酸，并且还可以任选地含有研磨剂。

37. 发明授权

US07923424B2 Semiconductor cleaning using superacids 失效
标题翻译：半导体清洁使用超强酸
公开(公告)号：US07923424B2
公开(公告)日：2011-04-12
申请号：US11350758
申请日：2006-02-10
申请人： Robert J. Small
发明人： Robert J. Small
IPC分类号： C11D7/08 , B08B3/08
CPC分类号： H01L21/02071 , C11D7/08 , C11D11/0047 , G03F7/423 , H01L21/31133 , Y10S134/902 , Y10S438/906
摘要： A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.
摘要翻译：清洁衬底的方法包括使半导体衬底的表面与包含超强酸的组合物接触。半导体衬底可以是晶片。

38. 发明授权

US07513920B2 Free radical-forming activator attached to solid and used to enhance CMP formulations 有权
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US07513920B2
公开(公告)日：2009-04-07
申请号：US11264027
申请日：2005-11-02
申请人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
发明人： Junaid Ahmed Siddiqui , Robert J. Small , Daniel Hernandez Castillo
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1463 , C23F3/04 , G11B5/3163 , G11B5/3169 , H01L21/3212
摘要： A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.
摘要翻译：一种CMP组合物，其具有：包含水和至少一种在与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。优选的活化剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。活化剂优选为Cu或Fe的离子。令人惊奇的是，只要0.2ppm和12ppm的活化剂是有用的，如果含活化剂的颗粒作为浆料悬浮在流体中。有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。

39. 发明申请

US20090014415A1 COMPOSITIONS AND METHODS FOR RAPIDLY REMOVING OVERFILLED SUBSTRATES 失效
标题翻译：用于快速去除过滤基板的组合物和方法
公开(公告)号：US20090014415A1
公开(公告)日：2009-01-15
申请号：US12201459
申请日：2008-08-29
申请人： Philippe H. Chelle , Robert J. Small
发明人： Philippe H. Chelle , Robert J. Small
IPC分类号： B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C23F1/18 , C23F3/06
摘要： This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.
摘要翻译：本发明涉及用于去除过度填充底物的组合物和方法，优选以相对高的去除速率。有利的是，根据本发明的组合物可含有氧化剂，优选为每种类型的氧化剂，例如过氧化物，高碘酸和过乙酸，并且还可以任选地含有研磨剂。

40. 发明授权

US07427361B2 Particulate or particle-bound chelating agents 失效
标题翻译：颗粒或颗粒结合的螯合剂
公开(公告)号：US07427361B2
公开(公告)日：2008-09-23
申请号：US10690626
申请日：2003-10-23
申请人： Robert J. Small , Donald William Frey , Bruce Tredinnick , Christopher G. Hayden
发明人： Robert J. Small , Donald William Frey , Bruce Tredinnick , Christopher G. Hayden
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/3212
摘要： The invention generally relates to compositions and methods for chemically mechanically polishing a substrate, including a polishing accelerator, which is normally one or more oxidizers, an abrasive material, and chelating particles and/or metal-absorbent clay material. In addition, the invention can also involve methods of forming chelator particles and methods of separating metal-containing ions from polishing and/or etching solutions after polishing and/or etching.
摘要翻译：本发明总体上涉及用于化学机械抛光基材的组合物和方法，包括抛光促进剂，其通常是一种或多种氧化剂，研磨材料和螯合颗粒和/或金属吸收性粘土材料。此外，本发明还可以包括形成螯合剂颗粒的方法和在抛光和/或蚀刻之后将金属离子从抛光和/或蚀刻溶液中分离的方法。

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