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31. 发明申请

US20140004712A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：可开发的底部抗反射涂料组合物及其使用的图案形成方法
公开(公告)号：US20140004712A1
公开(公告)日：2014-01-02
申请号：US13537177
申请日：2012-06-29
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
IPC分类号： G03F7/20 , H01L21/265 , C09K3/00
CPC分类号： G03F7/11 , C08F220/26 , C08L33/066 , C08L33/16 , C08L2312/00 , C09D133/066 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/30 , G03F7/322 , G03F7/40 , H01L21/0274 , H01L21/0276 , H01L21/265 , C08L2205/025
摘要： The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
摘要翻译：本发明涉及一种可显影底部抗反射涂层（BARC）组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分，含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物，含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。第一和第二发色团部分各自吸收波长从100nm到400nm的光。在图案形成方法中，在BARC组合物的BARC层上形成光致抗蚀剂层。曝光后，通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

32. 发明授权

US08568960B2 Multiple exposure photolithography methods 有权
标题翻译：多曝光光刻法
公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/26 , G03F7/40
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

33. 发明授权

US08394573B2 Photoresist compositions and methods for shrinking a photoresist critical dimension 失效
标题翻译：用于收缩光刻胶临界尺寸的光刻胶组合物和方法
公开(公告)号：US08394573B2
公开(公告)日：2013-03-12
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译：一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

34. 发明申请

US20090130590A1 PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS 失效
标题翻译：多层次光电子系统的多光照组合物和工艺
公开(公告)号：US20090130590A1
公开(公告)日：2009-05-21
申请号：US11942062
申请日：2007-11-19
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
IPC分类号： G03C1/73 , G03F7/26
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译：光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

35. 发明授权

US06303263B1 Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups 失效
标题翻译：使用含有两个酸敏感性保护基团的聚合物的辐射敏感正性抗蚀剂
公开(公告)号：US06303263B1
公开(公告)日：2001-10-16
申请号：US09030568
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.
摘要翻译：本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。根据本发明，聚合物树脂包含双嵌段聚合物树脂。具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

36. 发明授权

US6103447A Approach to formulating irradiation sensitive positive resists 失效
标题翻译：制定辐射敏感阳性抗蚀剂的方法
公开(公告)号：US6103447A
公开(公告)日：2000-08-15
申请号：US30566
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译：本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基保护，并且所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

37. 发明授权

US08268542B2 Method for reducing side lobe printing using a barrier layer 有权
标题翻译：使用阻挡层减少旁瓣印刷的方法
公开(公告)号：US08268542B2
公开(公告)日：2012-09-18
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/26
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

38. 发明申请

US20120214099A1 PHOTORESIST COMPOSITIONS 有权
标题翻译：光电组合物
公开(公告)号：US20120214099A1
公开(公告)日：2012-08-23
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/016 , G03F7/008 , G03F7/027
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：一个组成组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏碱产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-羟乙基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

39. 发明授权

US08227307B2 Method for removing threshold voltage adjusting layer with external acid diffusion process 有权
标题翻译：用外部酸性扩散法去除阈值电压调节层的方法
公开(公告)号：US08227307B2
公开(公告)日：2012-07-24
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

40. 发明授权

US08227180B2 Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权
标题翻译：通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进
公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/00 , G03F7/028 , G03F7/11 , G03F7/20 , G03F7/40
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

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