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    • 33. 发明授权
    • Lighting device
    • 照明设备
    • US09423082B2
    • 2016-08-23
    • US14130681
    • 2012-06-25
    • Andreas BiebersdorfReiner WindischKrister Bergenek
    • Andreas BiebersdorfReiner WindischKrister Bergenek
    • F21K99/00H01L25/075H01L33/50H01L33/58
    • F21K9/64H01L25/0753H01L33/507H01L33/58H01L2924/0002H01L2924/00
    • A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation.
    • 照明装置可以包括:具有安装表面的载体,至少一个发光二极管芯片,其在其背离载体的一侧具有辐射出射表面,在操作期间至少产生在发光二极管芯片中产生的电磁辐射至少 部分地,以辐射透射的方式设计的至少一个光学体和包括磷光体的成形体,其中每个发光二极管芯片固定到载体上的安装表面,每个光学体固定到辐射出射表面 成形体在光学体的侧表面以积极锁定的方式包围每个光学体,并且荧光体在操作期间转换至少一个发光二极管芯片中产生的电磁辐射的至少一部分。
    • 35. 发明申请
    • CONVERSION ELEMENT AND A LIGHT-EMITTING DIODE COMPRISING SUCH A CONVERSION ELEMENT
    • 转换元件和包含这种转换元件的发光二极管
    • US20140117841A1
    • 2014-05-01
    • US14128683
    • 2012-05-09
    • Reiner Windisch
    • Reiner Windisch
    • C09K11/02F21K99/00
    • F21V9/30C09K11/025C09K11/59C09K11/646C09K11/7774F21K9/64F21Y2115/10H01L33/005H01L33/504H01L2933/0041
    • A conversion element for the wavelength conversion of electromagnetic radiation from a first wavelength range to electromagnetic radiation from a second wavelength range, which includes longer wavelengths than the first wavelength range, the conversion element includes: a matrix material, the optical refractive index of which is temperature-dependent, and at least two different types of luminophore particles wherein a multiplicity of luminophore particles of each of the types are distributed in the matrix material, luminophore particles of different types differ from one another in terms of average particle size and/or material, the conversion element, upon excitation by electromagnetic radiation from the first wavelength range emits mixed radiation including electromagnetic radiation from the first and the second wavelength range, and the correlated color temperature and/or the color locus of the mixed radiation remain(s) substantially the same when the matrix material is at a temperature of between 25° C. and 150° C.
    • 一种用于将电磁辐射从第一波长范围波长转换成包括比第一波长范围更长波长的第二波长范围的电磁辐射的转换元件,所述转换元件包括:光学折射率为 温度依赖性和至少两种不同类型的发光体颗粒,其中每种类型的多种发光体颗粒分布在基质材料中,不同类型的发光体颗粒在平均粒度和/或材料方面彼此不同 转换元件在来自第一波长范围的电磁辐射激发时发射包括来自第一和第二波长范围的电磁辐射的混合辐射,并且混合辐射的相关色温和/或颜色轨迹基本保持 当基体材料处于温度时相同 在25°C和150°C之间。
    • 38. 发明授权
    • Radiation detector
    • 辐射检测器
    • US08212285B2
    • 2012-07-03
    • US10593792
    • 2005-03-10
    • Arndt JaegerPeter StauβReiner Windisch
    • Arndt JaegerPeter StauβReiner Windisch
    • H01L31/102
    • H01L31/035236B82Y20/00H01L31/02162H01L31/0296H01L31/03046H01L31/1035Y02E10/544
    • The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength λ0, comprising a semiconductor body (1) with an active region (5) serving to generate a detector signal and intended to receive radiation, in which according to one embodiment the active region (5) includes a plurality of functional layers (4a, 4b, 4c, 4d) that have different band gaps and/or thicknesses and are implemented such that they (4a, 4b, 4c, 4d) at least partially absorb radiation in a range of wavelengths greater than λ0. According to a further embodiment, disposed after the active region is a filter layer structure (70) comprising at least one filter layer (7, 7a, 7b, 7c), said filter layer structure determining the short-wave side (101) of the detector sensitivity (10) according to the predefined spectral sensitivity distribution (9) by absorbing wavelengths smaller than λ0. A radiation detector for detecting radiation (8) according to the spectral sensitivity distribution (9) of the human eye is also specified. The semiconductor body can be monolithically integrated.
    • 本发明规定了一种用于根据在预定波长λ0呈现最大值的预定光谱灵敏度分布(9)来检测辐射(8)的辐射检测器,包括半导体本体(1),其具有用于产生 检测器信号并且旨在接收辐射,其中根据一个实施例,有源区域(5)包括具有不同带隙和/或厚度的多个功能层(4a,4b,4c,4d),并且被实现为使得它们 (4a,4b,4c,4d)至少部分吸收在大于λ0的波长范围内的辐射。 根据另一个实施例,在有源区域之后设置有包括至少一个滤波器层(7,7a,7b,7c)的滤波器层结构(70),所述滤波器层结构确定所述滤波器层 通过吸收小于λ0的波长,根据预定义的光谱灵敏度分布(9)检测器灵敏度(10)。 还规定了用于根据人眼的光谱灵敏度分布(9)检测辐射(8)的辐射检测器。 半导体本体可以单片集成。
    • 39. 发明申请
    • High Efficiency Conversion LED
    • 高效率转换LED
    • US20120146078A1
    • 2012-06-14
    • US13391180
    • 2010-08-11
    • Frank BaumannNorbert BoenischTim FiedlerFrank JermannStefan LangeReiner Windisch
    • Frank BaumannNorbert BoenischTim FiedlerFrank JermannStefan LangeReiner Windisch
    • H01L33/50
    • A conversion LED with a chip which emits primary blue radiation, and a layer containing luminescent substance upstream of the chip which converts at least part of the primary radiation of the chip into secondary radiation, wherein a first garnet A3B5O12:Ce yellow-green emitting luminescent substance and a second nitride silicate M2X5Y8:D orange-red emitting luminescent substance is used, wherein the peak wavelength of the primary radiation is in the range of 430 to 450 nm, in particular of up to 445 nm, while the first luminescent substance is a garnet with the cation A=Lu or a mixture of Lu, Y with up a Y fraction of up to 30%, and wherein B has fractions of both Al and Ga, while the second luminescent substance is a nitride silicate which contains both Ba and Sr as cation M, and in which the doping consists of Eu, wherein the second luminescent substance contains 35 to 75 mol.-% Ba for the component M, remainder is Sr, where X=Si and Y=N.
    • 具有发射初级蓝色辐射的芯片的转换LED和在芯片上游含有发光物质的层,其将芯片的至少一部分辐射转换成次级辐射,其中第一石榴石A3B5O12:Ce黄绿色发光发光 物质和第二氮化硅玻璃M2X5Y8:D橙红色发光发光物质,其中初级辐射的峰值波长在430至450nm的范围内,特别是高达445nm,而第一发光物质为 具有阳离子A = Lu或Lu,Y的混合物的石榴石,其Y含量高达30%,其中B具有Al和Ga两者的分数,而第二发光物质是含有Ba 和Sr作为阳离子M,其中掺杂由Eu组成,其中第二发光物质对于组分M含有35至75mol%的Ba,余量为Sr,其中X = Si且Y = N。
    • 40. 发明申请
    • Lamp
    • US20110248295A1
    • 2011-10-13
    • US13122779
    • 2009-08-11
    • Peter StaussReiner WindischFrank BaumannMatthias Peter
    • Peter StaussReiner WindischFrank BaumannMatthias Peter
    • H01L33/50
    • H01L25/0753H01L33/08H01L33/50H01L2224/32225H01L2924/0002H01L2924/00
    • In at least one embodiment of the luminous means (1), the latter comprises at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) comprises at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.
    • 在发光装置(1)的至少一个实施例中,后者包括在至少一个第一波长(L1)和至少一个第二波长(L2)的操作期间发射电磁辐射的至少一个光电半导体器件(2) 其中第一波长(L1)和第二波长(L2)彼此不同,并且低于500nm,特别是在200nm和500nm之间。 此外,发光装置(1)包括至少一个转换装置(3),其将第一波长(L1)至少部分转换成具有不同频率的辐射。 在运行期间由发光装置(1)发射的辐射光谱相对于黑体光谱是相同的。 这样的发光装置使得可以选择第一波长和第二波长,使得可以同时实现发光装置的高显色质量和高效率。