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31. 发明申请

US20080296557A1 Semiconductor Power Switch and Method for Producing a Semiconductor Power Switch 有权
标题翻译：半导体电源开关及制造半导体电源开关的方法
公开(公告)号：US20080296557A1
公开(公告)日：2008-12-04
申请号：US10587062
申请日：2005-01-19
申请人： Franz Kreupl , Robert Seidel
发明人： Franz Kreupl , Robert Seidel
IPC分类号： H01L29/66 , H01L21/335
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/0649 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66439 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： A semiconductor power switch and method is disclosed. In one embodiment the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact.
摘要翻译：公开了一种半导体功率开关和方法。在一个实施例中，半导体功率开关具有源极接触，漏极接触，设置在源极接触和漏极接触之间的半导体结构，以及可以用于控制源极之间的半导体结构的电流的栅极接触和漏极接触。半导体结构具有并联连接的多个纳米线，并且以使得每个纳米线在源极触点和漏极触点之间形成电连接的方式布置。

32. 发明申请

US20060261419A1 Method for fabricating a nanoelement field effect transistor with surrounded gate structure 失效
标题翻译：制造具有包围栅极结构的纳米元素场效应晶体管的方法
公开(公告)号：US20060261419A1
公开(公告)日：2006-11-23
申请号：US11482493
申请日：2006-07-07
申请人： Franz Kreupl , Robert Seidel
发明人： Franz Kreupl , Robert Seidel
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L51/0048 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L51/0545 , Y10S977/72 , Y10S977/742 , Y10S977/762 , Y10S977/813
摘要： The invention relates to a method for the production of a nanoelement field effect transistor, a nanoelement field effect transistor and a nanoelement arrangement. According to the method for the production of a nanoelement field effect transistor, a nanoelement is formed, a first and a second source-/drain area is coupled to the nanoelement, a surface area of a substrate is removed, such that a region of the nanoelement is exposed, and a gate-insulating structure and a gate structure are formed in a covered manner fully encompassing the nanoelement.
摘要翻译：本发明涉及一种制备纳米元素场效应晶体管，纳米元素场效应晶体管和纳米元素排列的方法。根据制造纳米元素场效应晶体管的方法，形成纳米元件，第一和第二源/漏区耦合到纳米元件，去除衬底的表面积，使得纳米元素被暴露，并且以完全包围纳米元素的覆盖方式形成栅极绝缘结构和栅极结构。

33. 发明授权

US06245174B1 Heat recoverable article 失效
标题翻译：热回收制品
公开(公告)号：US06245174B1
公开(公告)日：2001-06-12
申请号：US08973012
申请日：1997-11-26
申请人： Johannes Maria Cordia , Robert Seidel , Robert Ritter
发明人： Johannes Maria Cordia , Robert Seidel , Robert Ritter
IPC分类号： B65B5300
CPC分类号： F16L59/20 , B29C53/562 , B29C61/06 , B29C61/0625 , B29C65/3432 , B29C65/3476 , B29C65/4815 , B29C65/4855 , B29C65/5014 , B29C65/5021 , B29C65/5057 , B29C65/68 , B29C66/0242 , B29C66/1122 , B29C66/53241 , B29C66/71 , B29C66/7212 , B29C66/72321 , B29C66/73715 , B29C66/73751 , B29L2023/225 , F16L47/22 , Y10S174/08 , Y10T428/1328 , B29K2023/06 , B29K2023/0633 , B29K2307/04 , B29K2309/08 , B29K2277/10 , B29K2023/04 , B29K2033/12 , B29K2033/08 , B29K2023/083 , B29K2023/0691 , B29K2023/0683 , B29K2023/065 , B29K2023/0641
摘要： A dimensionally heat recoverable tubular article (1) is made by spirally wrapping cross-linked polymeric sheet (3) a number of times, and directly fusing together overlapping layers (5) of the cross-linked sheet (3) to form a consolidated tubular article. The final article has a wall thickness of at least 2.2 mm. Articles according to the invention may be made of different diameter and different wall thickness, starting from the same thickness initial sheet material, simply by changing the circumference of wrapping or the number of spiral wraps. Articles according to the invention are particularly useful as casings over joints between district heating pipes.
摘要翻译：通过将交联聚合物片材（3）螺旋缠绕多次制成尺寸加热可回收的管状物品（1），并将交联的片材（3）的重叠层（5）直接熔合在一起形成固化的管状物文章。最终制品的壁厚至少为2.2mm。根据本发明的制品可以由不同的直径和不同的壁厚制成，从相同厚度的初始片材开始，简单地通过改变包装的周长或螺旋形卷材的数量。根据本发明的制品特别适用于在区域供热管之间的接头之外的壳体。

34. 发明授权

US09023293B2 Device for separation of essential oils and method of use 有权
标题翻译：精油分离装置及使用方法
公开(公告)号：US09023293B2
公开(公告)日：2015-05-05
申请号：US13972720
申请日：2013-08-21
申请人： Robert Seidel
发明人： Robert Seidel
IPC分类号： B01L3/08 , C11B9/02
CPC分类号： C11B9/027 , B01L3/08
摘要： A light-oil separator device includes a collector funnel having a downwardly directed stem portion having an outside diameter. The stem portion adapts to insert in an upward extending neck portion of a collection vessel. The neck portion includes an inner diameter that is greater than the outer diameter of the funnel stem. The neck also includes an oil port at a first height. The vessel includes a body having a hydrosol port at a lower portion of a body sidewall. This port connects to an evacuation tube having a proximal end and an S-shape. This conduit includes an air vent at a top portion at a second height lower than the first height, the air vent extends upward to a height higher than the first height. The S-shape conduit terminates with a downward facing end portion at its distal end.
摘要翻译：轻油分离器装置包括具有向外指向的具有外径的杆部的收集器漏斗。杆部分适于插入收集容器的向上延伸的颈部中。颈部包括大于漏斗杆的外径的内径。颈部还包括在第一高度的油口。容器包括在身体侧壁的下部具有水溶胶端口的主体。该端口连接到具有近端和S形的抽空管。该导管包括位于比第一高度低的第二高度处的顶部的通风口，空气通道向上延伸到高于第一高度的高度。 S形导管在其远端处以向下的端部终止。

35. 发明申请

US20140058121A1 DEVICE FOR SEPARATION OF ESSENTIAL OILS AND METHOD OF USE 审中-公开
标题翻译：用于分离基本油的装置及其使用方法
公开(公告)号：US20140058121A1
公开(公告)日：2014-02-27
申请号：US13972720
申请日：2013-08-21
申请人： Robert Seidel
发明人： Robert Seidel
IPC分类号： C11B9/02
CPC分类号： C11B9/027 , B01L3/08
摘要： A light-oil separator device includes a collector funnel having a downwardly directed stem portion having an outside diameter. The stem portion adapts to insert in an upward extending neck portion of a collection vessel. The neck portion includes an inner diameter that is greater than the outer diameter of the funnel stem. The neck also includes an oil port at a first height. The vessel includes a body having a hydrosol port at a lower portion of a body sidewall. This port connects to an evacuation tube having a proximal end and an S-shape. This conduit includes an air vent at a top portion at a second height lower than the first height, the air vent extends upward to a height higher than the first height. The S-shape conduit terminates with a downward facing end portion at its distal end.
摘要翻译：轻油分离器装置包括具有向外指向的具有外径的杆部的收集器漏斗。杆部分适于插入收集容器的向上延伸的颈部中。颈部包括大于漏斗杆的外径的内径。颈部还包括在第一高度的油口。容器包括在身体侧壁的下部具有水溶胶端口的主体。该端口连接到具有近端和S形的抽空管。该导管包括位于比第一高度低的第二高度处的顶部的通风口，空气通道向上延伸到高于第一高度的高度。 S形导管在其远端处以向下的端部终止。

36. 发明授权

US08314494B2 Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices 有权
标题翻译：用于半导体器件中铜基金属区域的电极电位增加的金属覆盖层
公开(公告)号：US08314494B2
公开(公告)日：2012-11-20
申请号：US12355840
申请日：2009-01-19
申请人： Markus Nopper , Axel Preusse , Robert Seidel
发明人： Markus Nopper , Axel Preusse , Robert Seidel
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/76814 , H01L21/76849 , H01L21/76861 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.
摘要翻译：考虑到其中包含的一种或多种物质的标准电极电位，可以提供用于铜区域的导电盖材料，其具有增强的蚀刻电阻率。例如，代替常规使用的CoWP合金，可以通过用具有较小负极标准电极电位的金属物质例如镍代替钴物质来代替改进的合金。因此，可以增强设备性能，同时可以减少整体过程的复杂性。

37. 发明申请

US20090213830A1 COMMUNICATION SYSTEM 失效
标题翻译：具有纳米结构的电路和用于生产纳米结构的接触连接的方法
公开(公告)号：US20090213830A1
公开(公告)日：2009-08-27
申请号：US11577070
申请日：2005-10-11
申请人： Georg Duesberg , Franz Kreupl , Robert Seidel , Gernot Steinlesberger
发明人： Georg Duesberg , Franz Kreupl , Robert Seidel , Gernot Steinlesberger
IPC分类号： H04J3/00 , H04B1/38 , G08B13/14
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0021
摘要： A communication system is disclosed. In one embodiment, the communication system includes a communication device set up to execute a process, configured to put itself into an activated state or into a deactivated state at alternate times, receive time information in a first operating state of the activated state, take the received time information as a basis for ascertaining the later time at which useful information is transmitted to the communication device, receive the useful information at the later time in a second operating state of the activated state. Individual components of the communication device are able to be put into an activated state or into a deactivated state independently of one another.
摘要翻译：公开了一种电路。该电路包括由基本上碳层形成的至少一个纳米结构和碳互连，其中纳米结构和碳互连彼此直接耦合。

38. 发明申请

US20080206994A1 METHOD OF REDUCING NON-UNIFORMITIES DURING CHEMICAL MECHANICAL POLISHING OF EXCESS METAL IN A METALLIZATION LEVEL OF MICROSTRUCTURE DEVICES 有权
标题翻译：在微结构设备冶金级别降低金属化学机械抛光期间的非均匀性的方法
公开(公告)号：US20080206994A1
公开(公告)日：2008-08-28
申请号：US11866701
申请日：2007-10-03
申请人： Frank Feustel , Robert Seidel , Juergen Boemmels
发明人： Frank Feustel , Robert Seidel , Juergen Boemmels
IPC分类号： H01L21/302
CPC分类号： H01L21/3212
摘要： Prior to performing a CMP process for planarizing a metallization level of an advanced semiconductor device, an appropriate cap layer may be formed in order to delay the exposure of metal areas of reduced height level to the highly chemically reactive slurry material. Consequently, metal of increased height level may be polished with a high removal rate due to the mechanical and the chemical action of the slurry material, while the chemical interaction with the slurry material may be substantially avoided in areas of reduced height level. Therefore, a high process uniformity may be achieved even for pronounced initial surface topographies and slurry materials having a component of high chemical reactivity.
摘要翻译：在执行用于平坦化先进半导体器件的金属化水平的CMP工艺之前，可以形成适当的盖层，以便将高度水平降低的金属区域暴露于高度化学反应性浆料材料。因此，由于浆料的机械和化学作用，可以以高的去除速度抛光增加的高度水平的金属，同时可以在降低高度水平的区域中基本避免与浆料的化学相互作用。因此，即使对于具有高化学反应性的组分的显着的初始表面形貌和浆料材料也可以获得高的工艺均匀性。

39. 发明申请

US20080182406A1 METHOD OF FORMING A COPPER-BASED METALLIZATION LAYER INCLUDING A CONDUCTIVE CAP LAYER BY AN ADVANCED INTEGRATION REGIME 有权
公开(公告)号：US20080182406A1
公开(公告)日：2008-07-31
申请号：US11761444
申请日：2007-06-12
申请人： Axel Preusse , Michael Friedemann , Robert Seidel , Berit Freudenberg
发明人： Axel Preusse , Michael Friedemann , Robert Seidel , Berit Freudenberg
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

40. 发明申请

US20060234080A1 Integrated electronic component 有权
标题翻译：集成电子元件
公开(公告)号：US20060234080A1
公开(公告)日：2006-10-19
申请号：US11211168
申请日：2005-08-23
申请人： Robert Seidel , Franz Kreupl , Andrew Graham
发明人： Robert Seidel , Franz Kreupl , Andrew Graham
IPC分类号： C03C27/00 , B32B15/04 , B32B9/00
CPC分类号： H01L21/76876 , B82Y10/00 , H01L21/76802 , H01L21/76879 , H01L23/5226 , H01L23/53276 , H01L2221/1078 , H01L2221/1094 , H01L2924/0002 , Y10T428/12535 , Y10T428/12576 , Y10T428/12611 , Y10T428/24917 , Y10T428/30 , H01L2924/00
摘要： An integrated electronic component having a substrate, a metal multilayer system, which is arranged at least on regions of the substrate, and a nonconductive layer, which is arranged on the metal multilayer system and has at least one contact hole, in which at least one carbon nanotube is grown on the metal multilayer system at the bottom of the contact hole. The metal multilayer system includes a high-melting metal layer, a metal separating layer, a catalyst layer, and a final metal separating layer. The high-melting metal layer is composed of at least one of tantalum, molybdenum, and tungsten. The metal separating layer is composed of aluminum, gold, or silver. The catalyst layer is composed of at least one of iron, cobalt, nickel, yttrium, titanium, platinum, and palladium, and a combination thereof. The final metal separating layer, which is arranged above the catalyst layer, is composed of aluminum.
摘要翻译：一种集成电子部件，其具有基板，至少布置在所述基板的区域上的金属多层系统和非导电层，所述非导电层布置在所述金属多层系统上并且具有至少一个接触孔，其中至少一个碳纳米管在接触孔底部的金属多层体系上生长。金属多层体系包括高熔点金属层，金属分离层，催化剂层和最终金属分离层。高熔点金属层由钽，钼和钨中的至少一种构成。金属分离层由铝，金或银构成。催化剂层由铁，钴，镍，钇，钛，铂和钯中的至少一种及其组合构成。设置在催化剂层上方的最终金属分离层由铝构成。

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