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    • 38. 发明授权
    • High performance multi-chip flip chip package
    • 高性能多芯片倒装芯片封装
    • US06489678B1
    • 2002-12-03
    • US09285191
    • 1999-03-15
    • Rajeev Joshi
    • Rajeev Joshi
    • H01L2334
    • B23K1/0008B23K3/0623B23K2101/40H01L23/492H01L2924/0002H01L2924/00
    • A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.
    • 一种用于改进的多芯片半导体封装的结构和方法,其将封装电阻降低到可忽略的水平,并提供优异的热性能。 通过提供电绝缘的引线框架来促进多个管芯的外壳,该引线框架通过层压材料的非导电层与共同的基底载体分开。 在每个引线框架中形成的腔内部附着有硅管芯。 然后通过分布在每个管芯的表面以及与每个管芯相邻的引线框架的边缘的焊料凸块的阵列来形成硅片的有源表面与印刷电路板的直接连接。