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31. 发明申请

US20160186311A1 METHODS OF FORMING MOLYBDENUM SPUTTERING TARGETS 有权
标题翻译：形成莫氏体溅射目标的方法
公开(公告)号：US20160186311A1
公开(公告)日：2016-06-30
申请号：US15061566
申请日：2016-03-04
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , B22F1/00 , B22F3/16 , C21D8/02 , B22F5/00 , C22F1/18 , C22C27/04 , C23C14/14 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, sputtering targets are formed by introducing molybdenum powder into a sheet bar mold, pressing the powder to form a sheet bar, sintering the sheet bar to form an ingot having a density of at least 90% of a theoretical density, preheating the ingot, rolling the ingot to form a plate, and heat treating the plate.
摘要翻译：在各种实施例中，溅射靶是通过将钼粉末引入片材模具中形成的，压制粉末以形成片材棒，烧结片材棒以形成密度至少为理论密度的90％的锭料，预热锭，轧制锭以形成板，并对板进行热处理。

32. 发明授权

US09309591B2 Methods of depositing thin films using molybdenum sputtering targets 有权
标题翻译：使用钼溅射靶沉积薄膜的方法
公开(公告)号：US09309591B2
公开(公告)日：2016-04-12
申请号：US14608995
申请日：2015-01-29
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
IPC分类号： C23C14/34 , C23C14/46 , C23C14/35 , B22F3/16 , C22C1/04 , C22C27/04 , B22F3/24
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.
摘要翻译：在各种实施例中，提供包含钼的管状溅射靶并溅射以产生包含钼的薄膜。溅射靶可以通过形成具有内径IDI和外径ODI的管状坯料形成，所述管状坯料包括在模具中挤压钼粉末并烧结压制的钼粉末，对管坯进行加工以形成具有外径直径ODf小于ODI，并对加工的坯料进行热处理。溅射靶可以具有基本上均匀的织构（a）平行于纵向方向的110取向，和（b）平行于径向的111取向。

33. 发明申请

US20160027697A1 HYBRID WAFER DICING APPROACH USING A RECTANGULAR SHAPED TWO-DIMENSIONAL TOP HAT LASER BEAM PROFILE OR A LINEAR SHAPED ONE-DIMENSIIONAL TOP HAT LASER BEAM PROFILE LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 有权
标题翻译：使用矩形形状的二维顶部激光光束轮廓或线形形状的一维顶部激光激光束轮廓激光扫描过程和等离子体蚀刻过程的混合波形方法
公开(公告)号：US20160027697A1
公开(公告)日：2016-01-28
申请号：US14337810
申请日：2014-07-22
申请人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
发明人： Wei-Sheng Lei , Prabhat Kumar , Jungrae Park , Brad Eaton , Ajay Kumar
IPC分类号： H01L21/822 , H01L21/033 , H01L21/67 , H01L21/02
CPC分类号： H01L21/822 , B23K26/0732 , B23K26/364 , B23K2103/56 , H01L21/02057 , H01L21/0337 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/31105 , H01L21/32131 , H01L21/67069 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

34. 发明授权

US09076860B1 Residue removal from singulated die sidewall 有权
标题翻译：从单个模具侧壁残留除去
公开(公告)号：US09076860B1
公开(公告)日：2015-07-07
申请号：US14248165
申请日：2014-04-08
申请人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
发明人： Wei-Sheng Lei , Prabhat Kumar , James S. Papanu , Ajay Kumar , Brad Eaton
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/308 , H01L21/67
CPC分类号： H01L21/02076 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits.
摘要翻译：对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。该方法还包括用激光划线工艺对掩模进行图案化以在掩模中提供间隙，在半导体晶片的间隙暴露集成电路之间的半导体晶片。该方法还包括通过掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，从单个集成电路的侧壁去除蚀刻残留物。

35. 发明授权

US08491959B2 Methods of rejuvenating sputtering targets 有权
标题翻译：振动溅射靶材的方法
公开(公告)号：US08491959B2
公开(公告)日：2013-07-23
申请号：US13465475
申请日：2012-05-07
申请人： Steven A. Miller , Olaf Schmidt-Park , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmerman
发明人： Steven A. Miller , Olaf Schmidt-Park , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmerman
IPC分类号： B05D1/02
CPC分类号： C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a refractory metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
摘要翻译：在各种实施方案中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，其中包含难熔金属的溅射靶材料（i），（ii）在其中限定凹陷的沟槽，和（iii ）具有第一晶粒尺寸和第一晶体微结构。将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构比第一个结晶微结构。将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。

36. 发明申请

US20130183796A1 METHODS OF MANUFACTURING SOLAR CELL DEVICES 有权
标题翻译：制造太阳能电池器件的方法
公开(公告)号：US20130183796A1
公开(公告)日：2013-07-18
申请号：US13739390
申请日：2013-01-11
申请人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
发明人： Michael P. Stewart , Prabhat Kumar , Kapila P. Wijekoon , Lin Zhang , Hari K. Ponnekanti
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

37. 发明授权

US08425833B2 Methods of forming molybdenum sputtering targets 有权
标题翻译：形成钼溅射靶的方法
公开(公告)号：US08425833B2
公开(公告)日：2013-04-23
申请号：US13340973
申请日：2011-12-30
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
IPC分类号： B22F3/12 , B22F3/24 , B22F3/20 , C22C27/04
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.
摘要翻译：在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

38. 发明申请

US20120189483A1 Methods of forming molybdenum sputtering targets 有权
标题翻译：形成钼溅射靶的方法
公开(公告)号：US20120189483A1
公开(公告)日：2012-07-26
申请号：US13340973
申请日：2011-12-30
申请人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
发明人： Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Peter R. Jepson , Prabhat Kumar , Steven A. Miller , Richard Wu , David G. Schwarz
IPC分类号： B22F3/12 , B22F3/24 , B22F3/20
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.
摘要翻译：在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

39. 发明授权

US07910051B2 Low-energy method for fabrication of large-area sputtering targets 有权
标题翻译：用于制造大面积溅射靶的低能量方法
公开(公告)号：US07910051B2
公开(公告)日：2011-03-22
申请号：US11935099
申请日：2007-11-05
申请人： Stefan Zimmermann , Steve A. Miller , Prabhat Kumar , Mark Gaydos
发明人： Stefan Zimmermann , Steve A. Miller , Prabhat Kumar , Mark Gaydos
IPC分类号： C22F3/02 , C23C14/00 , B05D1/12
CPC分类号： H01J35/108 , B22F7/08 , C23C14/3414 , C23C24/04 , H01J35/08 , H01J2235/081 , H01J2235/083 , H01J2235/085 , Y10T29/4902
摘要： In various embodiments, large-area sputtering targets are formed by providing a plurality of sputtering targets each comprising a backing plate and a refractory metal layer disposed thereon, and spray depositing a refractory metal powder on an interface between the sputtering targets, the refractory metal powder consisting essentially of the same metal as each refractory metal layer, thereby joining the refractory metal layers of the sputtering targets.
摘要翻译：在各种实施例中，通过提供多个溅射靶来形成大面积溅射靶，每个溅射靶包括背板和设置在其上的难熔金属层，并且在溅射靶之间的界面上喷射沉积难熔金属粉末，难熔金属粉末基本上由与每个难熔金属层相同的金属组成，由此连接溅射靶的难熔金属层。

40. 发明申请

US20110041650A1 NIOBIUM BASED ALLOY THAT IS RESISTANT TO AQUEOUS CORROSION 有权
公开(公告)号：US20110041650A1
公开(公告)日：2011-02-24
申请号：US12915781
申请日：2010-10-29
申请人： Paul R. Aimone , Prabhat Kumar
发明人： Paul R. Aimone , Prabhat Kumar
IPC分类号： C22B4/06 , C22B34/24
CPC分类号： C22B34/24 , C22B9/20 , C22B9/226 , C22B9/228 , C22C27/02
摘要： A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

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